Texas Instruments TLV2313IDR

Overview

TLV2313IDR from Texas Instruments is a dual-channel, rail-to-rail input/output precision operational amplifier optimized for cost-sensitive, low-power systems. It delivers 1 MHz gain-bandwidth, 65 µA/ch quiescent current, 0.75 mV typical offset voltage, and operates from 1.8 V to 5.5 V supply - enabling use in battery-powered medical sensors and utility metering front-ends.

For engineers reviewing the TLV2313IDR datasheet, TLV2313IDR pinout, TLV2313IDR application, or TLV2313IDR equivalent, this page provides verified package mapping (SOIC-8), confirmed dual-amplifier circuit role, temperature-rated performance (–40°C to +125°C), and real-world design implications of its 26 nV/√Hz noise and 85 dB CMRR.

Technical Context

The TLV2313IDR implements a complementary differential input stage (N- and P-channel pairs) enabling true rail-to-rail input operation with ±0.2 V beyond supply rails. Its class AB output stage achieves rail-to-rail swing - typically within 5 mV of rails at 100 kΩ load - while maintaining unity-gain stability up to 150 pF capacitive loading.

It features integrated RF/EMI filtering on input pins, 4-kV HBM ESD protection, and no phase reversal under overdrive. Electrical behavior is characterized across 1.8 V–5.5 V supply and –40°C to +125°C, with key parameters including 2 μV/°C offset drift and 74–90 dB PSRR.

Key Specifications

Pinout & Package

TLV2313IDR is housed in an 8-pin SOIC (D) package measuring 4.90 mm × 3.91 mm, with standard 1.27 mm pitch and gull-wing leads suitable for automated reflow assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel precision op-amp applications.

Compared with MCP6022-I/SN, TLV2313IDR offers 35% lower quiescent current and built-in EMI rejection at the cost of 9 MHz less bandwidth; versus OPA2313IDR, it shares identical performance but differs in branding and orderable part lineage - both are functionally interchangeable in production.

Availability

TLV2313IDR is available at Aetrix Electronics and suitable for medical sensor front-ends, smart utility metering, and building automation nodes requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for TLV2313IDR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of op-amp design heritage and broad industrial qualification coverage.

The TLVx313 family was engineered for cost-sensitive, battery-operated systems demanding precision, low power, and robustness - targeting medical wearables, utility infrastructure, and smart building endpoints.

FAQ

What is the maximum capacitive load the TLV2313IDR can drive stably in unity-gain configuration?

The TLV2313IDR remains unity-gain stable with pure capacitive loads up to approximately 1 nF. For larger loads (e.g., >100 pF), adding a 10 Ω to 20 Ω series resistor at the output suppresses overshoot and ringing. This technique is validated in TI's SBOS753B datasheet Figure 19 and applies identically to TLV2313IDR in SOIC-8 packaging.

Does the TLV2313IDR support true rail-to-rail input when powered from a 1.8 V single supply?

Yes - the TLV2313IDR guarantees rail-to-rail input operation from (V−) − 0.2 V to (V+) + 0.2 V across its full 1.8 V to 5.5 V supply range. At 1.8 V, this means input voltages from –0.2 V to +2.0 V are fully supported without phase reversal, as confirmed in Section 7.7 and 7.8 of the SBOS753B datasheet.

What is the typical input bias current of the TLV2313IDR, and how does it affect high-impedance sensor interfaces?

The TLV2313IDR has a typical input bias current of ±1 pA, enabling reliable interfacing with sensors having source impedances up to 100 MΩ - such as pH electrodes, piezoresistive pressure elements, and high-value thermistor networks. This low IB ensures <1 mV error contribution even with 10 MΩ source resistance at room temperature.

Can the TLV2313IDR operate reliably at –40°C and +125°C, and are all specifications guaranteed across that range?

Yes - the TLV2313IDR is fully specified and production-tested over –40°C to +125°C. Key parameters including quiescent current (65–90 µA), offset voltage (≤3 mV), and CMRR (≥64 dB) are characterized across temperature. Thermal metrics (e.g., RθJA = 138.4°C/W for SOIC-8) confirm safe operation at max ambient with appropriate PCB copper area.

Is the TLV2313IDR pin-compatible with other dual-op-amps in SOIC-8 packages, such as the LM358 or MCP6022?

No - TLV2313IDR uses a non-standard SOIC-8 pinout: V− is on Pin 4, V+ on Pin 8, OUT A on Pin 1, and +IN B on Pin 5. This differs from LM358 (V+ on Pin 8, V− on Pin 4, but OUT A on Pin 1, −IN A on Pin 2) and MCP6022 (matching LM358 pinout). Direct replacement requires PCB layout revision; always verify pin functions in Section 6 of SBOS753B before substitution.