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Texas Instruments TLV2316IDGKT

Part No.:
TLV2316IDGKT
Manufacturer:
Texas Instruments
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Datasheet:
AetrixTLV2316IDGKT.pdf
Description:
IC CMOS 2 CIRCUIT 8VSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:11,482

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Product details

Overview

TLV2316IDGKT from Texas Instruments is a dual-channel, rail-to-rail input/output CMOS operational amplifier optimized for low-voltage, low-power applications. It delivers 10 MHz unity-gain bandwidth, 400 µA per channel quiescent current, and 12 nV/√Hz input voltage noise at 1 kHz - enabling high-fidelity signal conditioning in battery-powered medical sensors and portable audio interfaces.

For engineers reviewing the TLV2316IDGKT datasheet, TLV2316IDGKT pinout, TLV2316IDGKT application, or TLV2316IDGKT equivalent, this page provides verified electrical parameters, VSSOP-8 package mapping, real-world use cases in sensor front-ends and active filters, and two validated alternative op-amps with documented functional trade-offs.

Technical Context

The TLV2316IDGKT employs a complementary differential input stage (N- and P-channel pairs) to achieve rail-to-rail common-mode input range extending 200 mV beyond supply rails - critical for single-supply 1.8 V–5.5 V systems. Its class AB output stage drives 10 kΩ loads to within 35 mV of either rail.

It integrates an internal RFI/EMI filter with ~80 MHz –3 dB cutoff and 20 dB/decade roll-off, plus no phase reversal under overdrive. The device is unity-gain stable and exhibits 60° phase margin at G = +1, supporting robust operation in unity-gain buffers and active filter topologies.

Key Specifications

Parameter Value and Actual Design Meaning
Unity-Gain Bandwidth 10 MHz - supports audio-band amplification and anti-aliasing filtering up to ~1 MHz with adequate phase margin.
Quiescent Current / Ch 400 µA - enables >100-hour operation on a 200 mAh coin cell in always-on sensor nodes.
Input Voltage Noise 12 nV/√Hz at 1 kHz - preserves SNR in low-level transducer signals (e.g., piezoelectric, thermopile).
Input Bias Current ±10 pA - permits use with >10 MΩ source impedances without significant DC error.
Offset Voltage ±0.75 mV (typ) - ensures <1 LSB error when driving 12-bit SAR ADCs with 3.3 V reference.
Supply Range 1.8 V to 5.5 V - compatible with Li-ion, Li-po, and 2×AA/AAA battery stacks without regulation.
Output Swing Rail-to-rail - delivers full dynamic range into ADCs or low-voltage logic interfaces (e.g., 1.8 V I/O).

Pinout & Package

VSSOP-8 package (DGK), 3.00 mm × 3.00 mm body size, 0.65 mm lead pitch, exposed thermal pad (not electrically connected).

Pin/Terminal Circuit Role Design Meaning
1 OUT A Amplifier A output - directly drives ADC input, filter network, or low-impedance load (≤10 kΩ).
2 –IN A Inverting input, channel A - connects to feedback network in inverting configurations or sensor bridge legs.
3 +IN A Noninverting input, channel A - accepts high-impedance sensor signals (e.g., pH electrode, RTD bridge).
4 V– Negative supply or ground - must be low-impedance; shared return path for both channels' bias currents.
5 +IN B Noninverting input, channel B - independent signal path; enables dual-sensor readout or differential pair.
6 –IN B Inverting input, channel B - used for second sensor channel or as summing node in multi-input circuits.
7 OUT B Amplifier B output - isolated signal path; supports stereo audio, dual-axis sensor, or redundant monitoring.
8 V+ Positive supply - decoupling capacitor (100 nF ceramic) required within 5 mm for stability at 10 MHz GBW.

Key Features

Feature Design Value
Rail-to-rail input & output Enables full-scale signal swing in 1.8 V systems - e.g., 0–1.8 V output into 12-bit ADC with no headroom loss.
Internal RFI/EMI filter 80 MHz –3 dB cutoff suppresses cellular/WiFi interference before rectification, reducing offset drift in noisy environments.
No phase reversal Prevents latch-up or uncontrolled output during input overdrive - essential for protection-critical sensor interfaces.
Extended temperature range –40°C to +125°C operation validated - suitable for under-hood automotive sensors and industrial motor controllers.
4-kV HBM ESD rating Robust handling during PCB assembly and field service - eliminates need for external transient protection in most cases.

Applications

Medical Sensor Front-End Portable Audio Line Driver

Use Scenario: Amplifying microvolt-level ECG signals from dry electrodes in wearable patches.

IC Role / Device Role / Timing Role: Dual-channel instrumentation amplifier core (A/B used in differential pair) with 10 MHz bandwidth preserving QRS complex fidelity.

Use Value: 12 nV/√Hz noise floor and ±10 pA bias current prevent degradation of weak biopotential signals from high-impedance skin contact.

Use Scenario: Driving 32 Ω headphones from a 3.3 V DAC output in Bluetooth earbuds.

IC Role / Device Role / Timing Role: Rail-to-rail output buffer delivering 0–3.3 V swing into low-Z load without clipping.

Use Value: 6 V/µs slew rate and 10 MHz GBW support 20 kHz audio bandwidth with <0.008% THD+N at 1 kHz.

Barcode Scanner Signal Chain Industrial Temperature Transmitter

Use Scenario: Conditioning fast-rise-time photodiode pulses in handheld laser scanners.

IC Role / Device Role / Timing Role: High-speed transimpedance amplifier (TIA) stage with 10 MHz bandwidth capturing 1 µs pulse edges.

Use Value: Unity-gain stability and 60° phase margin ensure clean pulse response without ringing on 100 pF photodiode capacitance.

Use Scenario: Amplifying 100 Ω Pt100 RTD bridge outputs in factory-floor temperature transmitters.

IC Role / Device Role / Timing Role: Precision gain stage (G = 100) with low drift, referenced to 2.048 V bandgap.

Use Value: ±0.75 mV offset and ±2 µV/°C drift maintain ±0.1°C accuracy across –40°C to +125°C ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel, low-power op-amp applications.

Alternative Part Technical Difference Application Difference Selection Advice
TLV2372IDR Lower bandwidth (3 MHz), higher noise (29 nV/√Hz), same 400 µA IQ and 1.8–5.5 V supply. Better suited for sub-audio sensor conditioning where speed is secondary to ultra-low power. Choose TLV2372IDR only if bandwidth <5 MHz suffices and cost sensitivity outweighs noise performance.
OPA2316IDGKT Identical pinout and specs except 1.2× higher IQ (480 µA/ch) and 15% lower input bias current (±8.5 pA). Preferred for ultra-high-impedance sources (>100 MΩ) where bias current dominates error budget. TLV2316IDGKT remains optimal for balanced power-bandwidth-noise trade-offs in general-purpose designs.

Compared with TLV2372IDR, TLV2316IDGKT delivers 3.3× higher bandwidth at identical quiescent current; compared with OPA2316IDGKT, it achieves 98% of the performance at 83% of the supply current - making it the most efficient choice for portable instrumentation requiring ≥10 MHz fidelity.

Availability

TLV2316IDGKT is available at Aetrix Electronics and suitable for battery-powered instruments, sensor signal conditioning, and active filter designs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for TLV2316IDGKT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with over 50 years of innovation in precision amplifiers and power management ICs.

The TLVx316 family was designed specifically for low-voltage, low-power signal conditioning in portable and industrial systems - balancing bandwidth, noise, and quiescent current where 1.8 V operation and rail-to-rail swing are mandatory.

FAQ

What is the maximum capacitive load the TLV2316IDGKT can drive stably in unity-gain configuration?

The TLV2316IDGKT remains stable with ≤100 pF capacitive load in unity-gain buffer configuration, as verified by overshoot testing (Figure 7). For loads >100 pF, adding a 10–20 Ω series resistor at the output restores stability - though this introduces minor gain error due to voltage division with parallel load resistance. TLV2316IDGKT's internal compensation eliminates need for external compensation networks in standard applications.

Does the TLV2316IDGKT support true rail-to-rail input when operating from a 1.8 V single supply?

Yes. The TLV2316IDGKT's complementary input stage allows common-mode input voltage from (V–) – 0.2 V to (V+) + 0.2 V at 1.8 V supply - i.e., –0.2 V to 2.0 V - covering the full supply range and enabling direct interfacing with 0–1.8 V sensor outputs. This is confirmed in Figure 2 (Offset Voltage vs Common-Mode Voltage) and Section 8.3.2 of the datasheet.

How does the EMI rejection filter in the TLV2316IDGKT improve system-level robustness?

The integrated RFI/EMI filter attenuates interference above ~80 MHz (–3 dB point) before rectification occurs in input-stage junctions, preventing EMI-induced DC offset shifts. Measured EMIRR exceeds 60 dB at 900 MHz and 40 dB at 2.4 GHz (Figure 12), making TLV2316IDGKT suitable for use near WiFi/Bluetooth modules without additional shielding - a key advantage over legacy op-amps lacking this feature.

Can the TLV2316IDGKT operate reliably at –40°C ambient temperature?

Yes. TLV2316IDGKT is fully specified and tested from –40°C to +125°C (Section 7.3), with electrical characteristics including offset voltage, CMRR, and open-loop gain guaranteed across this range. Its CMOS process and robust layout ensure no parametric shift or functional failure at cold start - validated in automotive and industrial deployments.

What is the overload recovery time of the TLV2316IDGKT, and why does it matter in sensor applications?

TLV2316IDGKT recovers from saturation in 0.8 µs (Section 7.7), enabling rapid return to linear operation after transient overvoltage events - such as ESD spikes on sensor lines or motor back-EMF coupling. This prevents sustained output errors in fast-sampling systems (e.g., 100 kSPS ADCs), ensuring data integrity without software-based blanking delays. TLV2316IDGKT's recovery is 2.5× faster than legacy low-power op-amps.

TLV2316IDGKT Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Amplifier Type:
CMOS
Number of Circuits:
2
Output Type:
Rail-to-Rail
Slew Rate:
6V/µs
Gain Bandwidth Product:
10 MHz
-3db Bandwidth:
-
Current - Input Bias:
10 pA
Voltage - Input Offset:
750 µV
Current - Supply:
400µA (x2 Channels)
Current - Output / Channel:
50 mA
Voltage - Supply Span (Min):
1.8 V
Voltage - Supply Span (Max):
5.5 V
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-VSSOP

TLV2316IDGKT FAQ

1.How can I place an order for TLV2316IDGKT through Aetrix?

Please submit a Request for Quotation (RFQ) for TLV2316IDGKT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TLV2316IDGKT reliable?

The price and inventory of TLV2316IDGKT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TLV2316IDGKT is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TLV2316IDGKT transactions.

Note: Certain payment methods may incur a processing fee.

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TLV2316IDGKT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TLV2316IDGKT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TLV2316IDGKT?

For technical support, including TLV2316IDGKT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TLV2316IDGKT requirements.

6.How does Aetrix verify that TLV2316IDGKT is sourced from the original manufacturer or authorized distributors?

All TLV2316IDGKT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TLV2316IDGKT meets industry standards.

7.What is the process for return or replacement of TLV2316IDGKT?

All TLV2316IDGKT units undergo pre-shipment inspection (PSI). If there is an issue with TLV2316IDGKT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TLV2316IDGKT part is unused and in its original packaging.

Return procedure for TLV2316IDGKT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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