Texas Instruments TLV6002QDRQ1

Overview

TLV6002QDRQ1 from Texas Instruments is a dual-channel, AEC-Q100 Grade 1 qualified rail-to-rail input/output operational amplifier designed for automotive signal conditioning. It operates from 1.8 V to 5.5 V, delivers 1 MHz gain-bandwidth, draws only 75 µA per channel, and achieves 0.75 mV typical input offset voltage - enabling precision low-power sensing in infotainment and body electronics.

For engineers reviewing the TLV6002QDRQ1 datasheet, TLV6002QDRQ1 pinout, TLV6002QDRQ1 application, or TLV6002QDRQ1 equivalent, key selection considerations include its ±1 pA input bias current for high-impedance sensor interfaces, 28 nV/√Hz input voltage noise at 1 kHz, unity-gain stability with up to 150 pF capacitive loads, and integrated RF/EMI filtering for robust operation in electric vehicle inverters and passive safety systems.

Technical Context

The TLV6002QDRQ1 employs a complementary differential input stage (N- and P-channel pairs) to achieve rail-to-rail input operation extending 200 mV beyond supply rails, with a defined transition region where CMRR, PSRR, and offset drift degrade. Its class AB output stage delivers rail-to-rail output swing within 5 mV of either rail under 100 kΩ loads.

It features internal EMI rejection filtering (–3 dB at ~35 MHz), no phase reversal during overdrive, and robust ESD protection (±4 kV HBM, ±1 kV CDM). The device is specified across –40°C to +125°C and supports single-supply ADC driver, sensor interface, and active filter applications without external compensation.

Key Specifications

Pinout & Package

TLV6002QDRQ1 is packaged in an 8-pin SOIC (D package), measuring 3.91 mm × 4.90 mm, with standard JEDEC MS-012AC footprint and 1.27 mm pitch - compatible with automated SMT assembly and legacy automotive PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel automotive op-amp applications.

Compared with LM7332QMA/NOPB and TSV912AQDRQ1, TLV6002QDRQ1 uniquely balances ultra-low quiescent current, integrated EMI filtering, and guaranteed unity-gain stability - making it the optimal choice for cost-sensitive, space-constrained automotive modules requiring robustness across wide temperature and noise environments.

Availability

TLV6002QDRQ1 is available at Aetrix Electronics and suitable for electric vehicle inverters, infotainment audio subsystems, and passive safety sensor interfaces requiring stable component supply across extended automotive temperature ranges and multi-year production cycles.

Supply support for TLV6002QDRQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, specializing in analog and embedded processing technologies for automotive, industrial, and consumer markets.

TLV6002QDRQ1 belongs to TI's TLV600x-Q1 family of AEC-Q100 qualified, low-power operational amplifiers - engineered specifically for cost-sensitive automotive signal conditioning where rail-to-rail operation, EMI resilience, and extended temperature performance are mandatory.

FAQ

What is the maximum capacitive load TLV6002QDRQ1 can drive while maintaining unity-gain stability?

The TLV6002QDRQ1 remains unity-gain stable with pure capacitive loads up to approximately 1 nF. For loads exceeding 150 pF, stability margin decreases gradually; however, the device is explicitly characterized and guaranteed stable with up to 150 pF in the datasheet. When driving larger capacitive loads (e.g., ADC input capacitors or long cables), adding a 10–20 Ω series resistor at the output restores phase margin without compromising functionality in most automotive signal chains. This behavior is confirmed in Section 7.3.5 of the TLV6002QDRQ1 datasheet.

Does TLV6002QDRQ1 support operation from a 1.8-V single supply?

Yes, TLV6002QDRQ1 is fully specified and tested for operation from 1.8 V to 5.5 V, including all key parameters such as gain-bandwidth, input offset voltage, and rail-to-rail input/output swing. At 1.8 V, it maintains 1 MHz GBW and delivers output swing within 10 mV of each rail under 10 kΩ load - making it suitable for direct interfacing with 1.8-V microcontrollers and low-voltage sensors in modern automotive domain controllers. This capability is validated across the full –40°C to +125°C temperature range.

How does the internal EMI filter in TLV6002QDRQ1 improve system-level noise immunity?

The TLV6002QDRQ1 integrates an internal low-pass filter with a –3 dB cutoff at ~35 MHz and 20 dB/decade attenuation, targeting common sources of conducted EMI such as GSM, Bluetooth, and switching power supply harmonics. This filter operates on both common-mode and differential-mode noise at the input pins, reducing rectified offset shifts that would otherwise corrupt low-level sensor signals. Measured EMIRR performance exceeds 60 dB in the 10–1000 MHz band, directly improving reliability in infotainment and ADAS camera modules exposed to high RF field strength.

Is TLV6002QDRQ1 pin-compatible with other dual-channel op-amps in SOIC-8 packages?

TLV6002QDRQ1 uses the industry-standard SOIC-8 (D package) pinout defined in JEDEC MS-012AC, matching the pin functions of generic dual op-amps like LM358 and TL072. However, it is not functionally or electrically pin-compatible with those parts due to differences in input stage architecture (complementary vs. NPN), supply voltage range (1.8–5.5 V vs. wider ranges), and ESD protection topology. Direct replacement requires validation of offset, noise, and stability behavior in the target circuit - especially when driving capacitive loads or operating near rail limits.

What automotive qualification level does TLV6002QDRQ1 meet, and what does that cover?

TLV6002QDRQ1 is AEC-Q100 qualified to Grade 1, certifying operation from –40°C to +125°C ambient temperature, with HBM ESD rating of Level 3A (±4 kV) and CDM rating of Level C6 (±1 kV). This qualification covers stress testing for temperature cycling, humidity bias, mechanical shock, and solderability - ensuring reliability in under-hood, cabin, and chassis-mounted automotive modules. The qualification applies specifically to the TLV6002QDRQ1 device in SOIC-8 packaging, as documented in TI's AEC-Q100 test report SBOS934A.