Texas Instruments TLV70231DBVT

Overview

TLV70231DBVT from Texas Instruments is a 300-mA, low-quiescent-current, low-dropout linear regulator with fixed 3.1-V output, 2% DC accuracy, 35-μA quiescent current, 260–375-mV dropout at 300 mA, and 68-dB PSRR at 1 kHz - designed for Li-ion battery-powered handheld devices requiring stable low-noise voltage regulation.

For engineers reviewing the TLV70231DBVT datasheet, TLV70231DBVT pinout, TLV70231DBVT application, or TLV70231DBVT equivalent, this page delivers verified package mapping (SOT-23-5), confirmed thermal shutdown/overcurrent protection, validated 0.1-μF minimum ceramic output capacitance stability, and real-world load transient performance data across –40°C to +125°C.

Technical Context

The TLV70231DBVT uses a PMOS pass transistor architecture enabling ultra-low dropout voltage scaling with load current and maintaining regulation down to VIN = VOUT + VDO. Its precision bandgap reference and error amplifier deliver ±2% output accuracy over full temperature and load range.

It integrates active enable logic (EN high-threshold = 0.9 V, low-threshold = 0.4 V), undervoltage lockout (UVLO = 1.9 V), thermal shutdown (trip = 165°C, reset = 145°C), and current limiting (320–860 mA). The device operates stably with ≥0.1 μF effective output capacitance - enabling use of small-footprint, bias-voltage-derated ceramics in space-constrained designs.

Key Specifications

Pinout & Package

TLV70231DBVT is packaged in a 5-pin SOT-23 (DBV) with 2.90 mm × 1.60 mm body size and standard JEDEC MO-178 footprint. Thermal resistance R_θJA = 249.2°C/W enables >200 mW power dissipation in typical 2-layer PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TLC70231DBVT and MCP1703T-3102E/MB, TLV70231DBVT uniquely balances ultra-low dropout (260 mV), low noise (48 μVRMS), and minimal capacitance requirement (0.1 μF) - making it optimal for compact, battery-fed RF and mixed-signal systems demanding both efficiency and signal integrity.

Availability

TLV70231DBVT is available at Aetrix Electronics and suitable for wireless handsets, Bluetooth® audio modules, and ZigBee® sensor nodes requiring stable component supply with guaranteed long-term manufacturability and consistent parametric performance.

Supply support for TLV70231DBVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog and embedded processing technologies, with leadership in power management ICs for portable, industrial, and automotive markets.

The TLV702 series was engineered specifically for battery-operated handheld equipment - emphasizing low quiescent current, high PSRR, low noise, and minimal external component count to reduce size and cost in space-constrained designs.

FAQ

What is the maximum input voltage rating for TLV70231DBVT?

The absolute maximum input voltage for TLV70231DBVT is 6.0 V, as specified in the Absolute Maximum Ratings table. Operation above this level risks permanent damage. For reliable continuous operation, the recommended input range is 2.0 V to 5.5 V - ensuring proper regulation and thermal safety across all load and temperature conditions.

Does TLV70231DBVT require an input capacitor?

While TLV70231DBVT does not require an input capacitor for stability, Texas Instruments recommends a 0.1–1 μF low-ESR ceramic capacitor between IN and GND. This improves transient response, reduces input ripple coupling, and mitigates voltage excursions caused by source impedance - especially critical when the LDO is remote from its power source or subjected to fast load transients.

Can TLV70231DBVT operate with a 0.1-μF output capacitor?

Yes - TLV70231DBVT is explicitly characterized and guaranteed stable with an effective output capacitance of ≥0.1 μF, including derating due to bias voltage and temperature. This enables use of small-case X5R/X7R ceramics (e.g., 0402, 0603) without ESR constraints, reducing PCB area and BOM cost compared to legacy LDOs requiring ≥1 μF.

What is the enable pin behavior of TLV70231DBVT?

The EN pin of TLV70231DBVT is active-high: the device regulates when EN ≥ 0.9 V and enters shutdown (I_Q ≤ 2 μA) when EN ≤ 0.4 V. During shutdown, the output is high-impedance - no internal pulldown is present (unlike TLV702P variants). If EN is unused, it must be tied to IN to ensure default-enable operation.

How does thermal shutdown function in TLV70231DBVT?

TLV70231DBVT activates thermal shutdown at approximately 165°C junction temperature and resets at ~145°C. This hysteresis prevents oscillation near trip point. Continuous cycling indicates excessive power dissipation - designers must verify layout copper area, ambient temperature, and worst-case (VIN − VOUT) × I_OUT to keep T_J ≤ 125°C for reliable operation.