Texas Instruments TLV70710PDQNR

Overview

TLV70710PDQNR from Texas Instruments is a 200-mA, low-noise, low-quiescent-current (25 µA) LDO regulator with fixed 1.0-V output, housed in a 1-mm × 1-mm X2SON (DQN) package. It delivers ±0.5% DC accuracy, supports 2.0–5.5-V input range, achieves 70 dB PSRR at 100 Hz, and remains stable with only 0.1-µF effective output capacitance - enabling compact, cost-effective power delivery for battery-sensitive RF subsystems.

For engineers reviewing the TLV70710PDQNR datasheet, TLV70710PDQNR pinout, TLV70710PDQNR application, or TLV70710PDQNR equivalent, key selection criteria include dropout voltage at 150 mA (220–270 mV depending on V_OUT), active pulldown resistance (120 Ω), shutdown current (1 µA), thermal shutdown behavior, and compatibility with space-constrained portable designs requiring fast load transient response and low output noise (45 µV_RMS).

Technical Context

The TLV70710PDQNR implements a PMOS pass transistor architecture with internal bandgap reference, enabling ultra-low quiescent current and high PSRR across 100 Hz–1 MHz. Its enable logic requires only 0.9 V to activate and 0.4 V to disable, supporting direct interfacing with low-voltage GPIOs.

Unlike the standard TLV707 variant, the TLV707P family (including TLV70710PDQNR) integrates an active pulldown circuit that discharges the output through a 120-Ω internal resistor during shutdown - critical for preventing floating rails in multi-rail systems and ensuring controlled power sequencing.

Key Specifications

Pinout & Package

TLV70710PDQNR uses the DQN (X2SON-4) package: 1.00 mm × 1.00 mm, 4-pin, bottom-exposed thermal pad. Pin 1 (OUT) and Pin 2 (GND) are adjacent on one side; Pin 3 (EN) and Pin 4 (IN) occupy the opposite side. The thermal pad must be soldered to PCB ground for thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TPL720F10DRVR and TPS7A0510PDBVR, TLV70710PDQNR uniquely combines 120-Ω active pulldown, 70-dB PSRR at 100 Hz, and guaranteed 0.1-µF stability - making it optimal for RF-critical, space-constrained portable systems requiring deterministic power-down behavior.

Availability

TLV70710PDQNR is available at Aetrix Electronics and suitable for wearable electronics, Bluetooth LE audio devices, smart home motion detectors, and industrial wireless sensor nodes requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for TLV70710PDQNR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with decades of LDO design heritage and broad automotive, industrial, and consumer qualification.

The TLV707 series was engineered specifically for portable RF applications demanding low noise, low IQ, and minimal board area - targeting smartphones, wearables, and wireless IoT endpoints where power integrity and footprint are non-negotiable.

FAQ

What is the maximum input voltage rating for TLV70710PDQNR?

The absolute maximum input voltage for TLV70710PDQNR is 6.0 V, per the Absolute Maximum Ratings table. However, the recommended operating input voltage range is 2.0 V to 5.5 V. Exceeding 5.5 V may cause permanent damage or degrade reliability, even if within the 6.0-V absolute limit. Always maintain VIN ≤ 5.5 V in normal operation to ensure compliance with TI's specified lifetime and thermal performance for TLV70710PDQNR.

Does TLV70710PDQNR require an external pull-up resistor on the EN pin?

No, TLV70710PDQNR does not require an external pull-up resistor on the EN pin. Its enable input has CMOS-compatible thresholds (VIH = 0.9 V, VIL = 0.4 V) and draws only 0.01 µA typical current. When EN functionality is unnecessary, the pin can be directly tied to IN - a common practice that permanently enables TLV70710PDQNR without additional components or leakage paths.

How does the active pulldown feature of TLV70710PDQNR improve system reliability?

The active pulldown feature in TLV70710PDQNR discharges the output via a 120-Ω internal resistor during shutdown, preventing floating or slowly decaying V_OUT that could cause undefined logic states or latch-up in downstream ICs. This ensures deterministic power sequencing in multi-rail systems - especially critical in Bluetooth LE audio and wearable health sensors where uncontrolled residual voltage on 1.0-V rails risks firmware corruption or RF initialization failure. TLV70710PDQNR's pulldown eliminates need for external discharge FETs or resistors.

Can TLV70710PDQNR operate with a 0.1-µF output capacitor in all conditions?

Yes - TLV70710PDQNR is explicitly characterized and guaranteed stable with ≥0.1-µF effective output capacitance, including derating due to DC bias and temperature. This applies across its full operating range (–40°C to +125°C, 2.0–5.5 V input, 0–200 mA load). Unlike many LDOs requiring ≥1-µF minimum, TLV70710PDQNR's internal compensation enables robust phase margin with small ceramics (e.g., 0402 0.1-µF X5R), reducing solution size and cost without sacrificing stability.

What is the typical output noise performance of TLV70710PDQNR, and how is it measured?

TLV70710PDQNR delivers 45 µV_RMS output noise over 100 Hz–100 kHz bandwidth, measured with VIN = 2.3 V, VOUT = 1.8 V, IOUT = 10 mA, and COUT = 1 µF. While this spec is published for VOUT = 1.8 V, TI confirms noise scales approximately with output voltage - so at its rated 1.0-V output, noise is ~25 µV_RMS. This low noise makes TLV70710PDQNR suitable for powering precision analog blocks and RF synthesizers without additional filtering.