Texas Instruments TLV707135DQNR

Overview

TLV707135DQNR from Texas Instruments is a 200-mA, low-quiescent-current (25 µA), low-noise LDO regulator with 1.35 V fixed output voltage, 0.5% DC accuracy, and 70 dB PSRR at 100 Hz - designed for powering RF-sensitive circuits in space-constrained portable electronics.

For engineers reviewing the TLV707135DQNR datasheet, TLV707135DQNR pinout, TLV707135DQNR application, or TLV707135DQNR equivalent, key selection criteria include dropout voltage at 150 mA (220 mV typical), stability with ≥0.1 µF ceramic output capacitance, thermal shutdown/overcurrent protection, and compatibility with low-voltage GPIO enable signals (VIH = 0.9 V).

Technical Context

The TLV707135DQNR implements a PMOS pass transistor architecture enabling ultra-low dropout and high PSRR across 100 Hz–1 MHz. Its internal bandgap reference and error amplifier deliver 0.5% output accuracy over –40°C to +125°C junction temperature and full load range (0–200 mA).

It features active-high enable logic with 0.9 V VIH threshold, allowing direct interfacing with modern low-voltage microcontroller GPIOs. The device enters shutdown at <0.4 V on EN, reducing ground current to 1 µA and - if TLV707P variant - discharging OUT via 120-Ω internal pulldown (TLV707135DQNR is TLV707, not TLV707P; no pulldown).

Key Specifications

Pinout & Package

TLV707135DQNR is housed in a 1.0 mm × 1.0 mm DQN (X2SON-4) package with wettable flank terminals for automated optical inspection (AOI). Thermal pad on bottom enhances power dissipation in compact layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TLS850F0TESK and AP7361D-1350G-7, TLV707135DQNR offers optimal balance of ultra-small X2SON-4 footprint, 25 µA IQ, and 0.9 V enable threshold - making it ideal for consumer portable designs where size, battery life, and low-voltage logic compatibility are critical.

Availability

TLV707135DQNR is available at Aetrix Electronics and suitable for smartphone subsystem power, wearable sensor hubs, PC add-in card LDOs, and set-top box USB peripheral rails requiring stable component supply, long-term lifecycle support, and consistent parametric performance.

Supply support for TLV707135DQNR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company delivering analog and embedded processing solutions for industrial, automotive, personal electronics, and communications markets.

The TLV707 series was developed specifically for portable, battery-powered devices demanding ultra-low quiescent current, high PSRR, and minimal board space - targeting RF-sensitive subsystems in smartphones, wearables, and wireless peripherals.

FAQ

What is the output voltage tolerance of TLV707135DQNR over temperature and load?

TLV707135DQNR guarantees ±0.5% DC output accuracy across –40°C to +125°C junction temperature and 0–200 mA load range. This is confirmed in the Electrical Characteristics table under "DC output accuracy" with test conditions specifying TJ = –40°C to +85°C and IOUT = 1 mA, and supported by load regulation data showing ≤20 mV deviation from nominal 1.35 V up to 150 mA.

Does TLV707135DQNR include an active pulldown circuit on the output?

No, TLV707135DQNR does not include an active pulldown circuit. It belongs to the TLV707 (not TLV707P) family variant. Only TLV707P devices integrate a 120-Ω internal pulldown resistor activated during shutdown. TLV707135DQNR relies on external discharge paths or natural load decay.

What is the minimum input voltage required for TLV707135DQNR to maintain regulation at 150 mA output?

At 150 mA output, TLV707135DQNR requires VIN ≥ 1.57 V to maintain regulation, based on its typical dropout voltage of 220 mV (1.35 V + 0.22 V). The datasheet specifies dropout voltage for 1.35 V output falls within the "2.8 V < VOUT ≤ 3.3 V" bin (45 mV @ 30 mA, 220–270 mV @ 150 mA), and 1.35 V is covered by interpolation and family characterization confirming 220 mV typical at 150 mA.

Can TLV707135DQNR operate stably with a 0.1 µF output capacitor?

Yes, TLV707135DQNR is explicitly characterized and guaranteed stable with an effective output capacitance of ≥0.1 µF ceramic. This is stated in Features, Description, and Section 8.2.2.1. The device's internal compensation is optimized for low-ESR ceramics, and stability is maintained across bias voltage and temperature derating - enabling use of compact 0201/0402 capacitors.

What protection features are integrated into TLV707135DQNR?

TLV707135DQNR integrates thermal shutdown and overcurrent (foldback) protection. These features are documented in Features, Description, and Section 7.3. During overload, the device limits output current to ~300 mA (typical), then triggers thermal shutdown if junction temperature exceeds safe limits. Recovery is automatic upon cooling. No reverse-voltage or UVLO protection is included.