Texas Instruments TLV70734DQNR

Overview

TLV70734DQNR from Texas Instruments is a 200-mA, low-quiescent-current (25 µA), low-noise LDO regulator with 3.4-V fixed output voltage, 0.5% DC accuracy, and 70 dB PSRR at 100 Hz. It operates from 2.0 V to 5.5 V input, supports 0.1-µF minimum output capacitance, and delivers stable regulation with no load. It is used in battery-powered RF subsystems of smartphones and wearable electronics.

For engineers reviewing the TLV70734DQNR datasheet, TLV70734DQNR pinout, TLV70734DQNR application, or TLV70734DQNR equivalent, key selection criteria include dropout voltage at 150 mA (220–270 mV for 3.4-V output), thermal shutdown/overcurrent protection, EN pin logic thresholds (0.4 V disable / 0.9 V enable), and compatibility with space-constrained 1-mm × 1-mm X2SON packaging.

Technical Context

The TLV70734DQNR uses a PMOS pass transistor architecture enabling ultra-low dropout and fast line/load transient response. Its internal bandgap reference and error amplifier deliver 0.5% output accuracy across –40°C to +125°C junction temperature, while integrated current limiting and thermal shutdown ensure fault robustness without external circuitry.

It features active-high enable control with rail-compatible logic thresholds (VIH = 0.9 V min, VIL = 0.4 V max), allowing direct interfacing with low-voltage GPIOs. The device remains stable with ≥0.1 µF effective output capacitance-enabling use of small-footprint, bias-voltage-derated ceramic capacitors in portable designs.

Key Specifications

Pinout & Package

TLV70734DQNR is housed in a 1-mm × 1-mm DQN (X2SON-4) package with wettable flank terminals for automated optical inspection. The exposed thermal pad improves thermal performance in high-density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TLC70734DQNR, TLV70734DQNR offers proven production maturity and broader distributor stock, while MCP1703T-3302E/MB trades size and noise performance for ultra-low I_Q and higher current headroom-making each viable depending on voltage tolerance, noise budget, and layout constraints.

Availability

TLV70734DQNR is available at Aetrix Electronics and suitable for smartphone RF subsystems, wearable sensor nodes, gaming peripheral power management, and TV HDMI interface circuits requiring stable component supply and long-term manufacturability.

Supply support for TLV70734DQNR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of LDO design expertise for portable and industrial applications.

The TLV707 series was engineered specifically for space- and power-constrained portable RF systems-delivering low-noise, low-I_Q, and minimal footprint without sacrificing protection or accuracy.

FAQ

What is the minimum input voltage required for TLV70734DQNR to regulate at full 200-mA load?

The TLV70734DQNR requires VIN ≥ VOUT + V(DO), where V(DO) is 220–270 mV at 150 mA for 3.4-V output. At 200 mA, dropout rises slightly-TI specifies 300 mV max under worst-case conditions. Thus, minimum VIN = 3.4 V + 0.3 V = 3.7 V ensures regulation across temperature and process variation. TLV70734DQNR must not be operated below this to avoid unregulated output.

Can TLV70734DQNR be used without an enable signal, and how should EN be connected?

Yes-TLV70734DQNR can operate without external enable control. Connect EN directly to IN to keep the device permanently enabled. This configuration draws 25 µA quiescent current continuously. TLV70734DQNR does not require pull-up resistors; its EN pin has negligible leakage (0.01 µA), making direct IN tie safe and common in always-on applications.

Is TLV70734DQNR stable with a 0.22-µF X5R ceramic capacitor, and why does TI specify 0.1 µF minimum?

Yes-TLV70734DQNR is stable with any ≥0.1-µF effective output capacitance. A 0.22-µF X5R capacitor typically retains >0.15 µF under 3.4-V bias and 85°C, well above the 0.1-µF threshold. TI's 0.1-µF specification refers to *effective* capacitance after derating-not nominal value-so 0.22-µF X5R is robustly compliant and improves transient response margin.

Does TLV70734DQNR include reverse-voltage protection, and what happens if VOUT exceeds VIN?

No-TLV70734DQNR lacks reverse-voltage protection. Its PMOS pass transistor contains an intrinsic body diode that conducts when VOUT > VIN. During such reverse bias, current flows uncontrolled from OUT to IN. TI recommends limiting reverse current to ≤5% of rated output (≤10 mA) using external series resistance or diode to prevent damage. TLV70734DQNR is not rated for sustained reverse operation.

What is the thermal performance of TLV70734DQNR in the DQN package, and how much power can it safely dissipate?

In the DQN (X2SON-4) package, TLV70734DQNR has RθJA = 208.1°C/W. At 25°C ambient and max TJ = 125°C, allowable ΔT = 100°C → max power dissipation = 100 / 208.1 ≈ 480 mW. For example, at 200 mA and 300-mV dropout, P_D = 60 mW-well within limit. Layout with thermal pad soldered to PCB copper significantly improves RθJB (159.4°C/W), enabling higher continuous loads.