Texas Instruments TLV755185PDQNRM3

Overview

TLV755185PDQNRM3 from Texas Instruments is a 500mA, low-quiescent-current (25μA typ), fixed-output 1.85V low-dropout regulator in a 1mm × 1mm X2SON-4 package. It operates from 1.45V to 5.5V input, delivers ±1.2% output accuracy over –40°C to +85°C, and supports stable regulation with only 1µF ceramic output capacitance - ideal for space-constrained battery-powered MCU core supplies.

For engineers reviewing the TLV755185PDQNRM3 datasheet, TLV755185PDQNRM3 pinout, TLV755185PDQNRM3 application, or TLV755185PDQNRM3 equivalent, key selection criteria include dropout voltage at 500mA (max 350mV @ 1.85VOUT), active output discharge, foldback current limiting, and thermal shutdown behavior across industrial temperature range.

Technical Context

The TLV755185PDQNRM3 uses a PMOS pass transistor architecture enabling ultra-low dropout and high PSRR (46dB @ 100kHz). Its internal bandgap reference and error amplifier deliver 1% typical output accuracy, while integrated soft-start ensures monotonic V_OUT rise and limits inrush current during power-up.

Functional modes include normal regulation, dropout (where V_OUT tracks V_IN), and disabled state with active pulldown (120Ω) to ground. Undervoltage lockout (UVLO) activates below 1.21V (rising), and thermal shutdown triggers at 165°C with 10°C hysteresis.

Key Specifications

Pinout & Package

TLV755185PDQNRM3 is housed in a 1mm × 1mm, 4-pin X2SON (DQN) package with wettable flanks, optimized for automated optical inspection (AOI) and high-density PCB layouts. The exposed pad is internally connected to GND and must be soldered to a thermal pad on the PCB for optimal thermal performance (R_θJA = 168.4°C/W per JEDEC standard).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TPS7A05185PDBVR and TPL7407LPGQDR, TLV755185PDQNRM3 uniquely combines 500mA output, 350mV dropout at full load, and 1mm² X2SON packaging - making it the only option supporting high-current, ultra-compact, and thermally demanding applications without compromising accuracy or PSRR.

Availability

TLV755185PDQNRM3 is available at Aetrix Electronics and suitable for portable medical sensors, industrial PLC I/O modules, smart home edge nodes, and automotive body control units requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TLV755185PDQNRM3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with decades of LDO design expertise and broad industrial qualification.

The TLV755P family was engineered for ultra-low-power, space-constrained applications including battery-powered IoT endpoints, wearables, and MCU core supplies - emphasizing minimal quiescent current, small footprint, and robust protection features.

FAQ

What is the maximum output current capability of the TLV755185PDQNRM3?

The TLV755185PDQNRM3 delivers up to 500mA continuous output current under recommended operating conditions (T_J ≤ 125°C, V_IN ≥ V_OUT + V_DO). At 500mA and 1.85V output, its maximum dropout is 350mV over temperature, ensuring reliable operation from inputs as low as 2.2V. Current limit folds back during short-circuit events to reduce thermal stress.

Does the TLV755185PDQNRM3 require an external pull-up resistor on the EN pin?

No - the TLV755185PDQNRM3 does not require an external pull-up on EN. Its enable pin has no internal pull-up; however, it features an internal pulldown (10nA typical leakage). For default-enable operation, connect EN directly to IN. For controlled shutdown, drive EN actively between 0V (disable) and ≥1V (enable), respecting V_LO = 0.3V and V_HI = 1V thresholds.

Can the TLV755185PDQNRM3 operate with less than 1µF output capacitance?

No - the TLV755185PDQNRM3 is specified and guaranteed stable only with ≥1µF ceramic output capacitance (X5R/X7R dielectric). Using smaller values risks oscillation or degraded transient response. The datasheet mandates ≥0.47µF minimum effective capacitance at the pin (accounting for DC bias derating), and 1µF is the validated design point for all electrical characteristics, including PSRR and noise.

What thermal performance can be expected from the TLV755185PDQNRM3 in the DQN package?

In the 1mm × 1mm X2SON-4 (DQN) package, TLV755185PDQNRM3 exhibits R_θJA = 168.4°C/W per JEDEC standard (2s2p board). With proper PCB layout - including a solid GND thermal pad connected via ≥4 thermal vias to inner planes - actual R_θJA can improve to ~100°C/W. Junction temperature must remain ≤125°C for reliable operation; thermal shutdown activates at 165°C.

Is the TLV755185PDQNRM3 compatible with 1.8V logic-level enable signals?

Yes - the TLV755185PDQNRM3 accepts 1.8V as a valid high-enable signal. Its V_HI threshold is 1V (min), and V_LO is 0.3V (max), providing ample noise margin for 1.8V GPIOs. The EN pin draws only 10nA at 5.5V, so standard microcontroller outputs can drive it directly without buffering. No level-shifting is required for 1.8V-system integration.