Texas Instruments TLV75519PDQNR

Overview

TLV75519PDQNR from Texas Instruments is a 500mA, low-quiescent-current (25μA typical), fixed 1.9V output low-dropout regulator in a 1mm × 1mm X2SON-4 package. It operates from 1.45V to 5.5V input, delivers ±1.2% output accuracy over temperature (−40°C to +85°C), and maintains stability with only 1µF ceramic output capacitance. It serves as a compact, efficient core supply for microcontrollers and sensors in space-constrained portable electronics.

For engineers reviewing the TLV75519PDQNR datasheet, TLV75519PDQNR pinout, TLV75519PDQNR application, or TLV75519PDQNR equivalent, key selection criteria include its ultra-small X2SON-4 footprint, 238mV max dropout at 500mA (for 3.3VOUT), active output discharge, foldback current limit, and 46dB PSRR at 100kHz - all critical for battery-powered systems requiring fast transient response and low standby power.

Technical Context

The TLV75519PDQNR uses a PMOS pass transistor architecture enabling low dropout and high PSRR. Its internal bandgap reference and error amplifier deliver 1.9V output with ±1.2% accuracy across −40°C to +85°C for the DQN package, and it integrates undervoltage lockout (1.21–1.44V threshold), thermal shutdown (165°C trip), and active pulldown (120Ω) during disable.

Functional modes include normal regulation (VIN ≥ VOUT + VDO), dropout (VIN < VOUT + VDO, output tracks input), and disabled state (EN < 0.3V), with built-in soft-start ensuring monotonic VOUT rise and preventing inrush-induced input droop. The device supports up to 200µF output capacitance and requires no external compensation.

Key Specifications

Pinout & Package

TLV75519PDQNR is housed in a 1mm × 1mm, 4-pin X2SON (DQN) package with wettable flanks, optimized for automated optical inspection (AOI) and high-density PCB layouts. The thermal pad is internally connected to GND and must be soldered to a PCB ground plane for optimal thermal performance (R_θJA = 168.4°C/W per JEDEC standard).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TLS850F0TESK and MCP1703T-1902E/MB, TLV75519PDQNR uniquely balances ultra-small size (1mm × 1mm), 500mA capability, active discharge, and 25μA I_Q - making it optimal for space-constrained, battery-operated, non-automotive embedded systems needing precise 1.9V regulation without safety overhead.

Availability

TLV75519PDQNR is available at Aetrix Electronics and suitable for portable medical sensors, industrial edge node controllers, smart home motion detectors, and automotive cabin camera modules requiring stable component supply and long-term production continuity.

Supply support for TLV75519PDQNR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with decades of LDO design expertise and broad industrial qualification.

The TLV755P family was engineered for ultra-low-power, space-constrained applications - delivering high accuracy, low dropout, and minimal quiescent current across fixed-output voltages from 0.6V to 5.0V in sub-1mm packages.

FAQ

What is the maximum input voltage rating for TLV75519PDQNR?

The absolute maximum input voltage for TLV75519PDQNR is 6.0V. However, the recommended operating range is 1.45V to 5.5V. Exceeding 6.0V risks permanent damage per the Absolute Maximum Ratings table. For reliable operation at 5.5V input, ensure thermal design accommodates (5.5V − 1.9V) × I_OUT power dissipation, especially at full 500mA load.

Does TLV75519PDQNR require an external pull-up resistor on the EN pin?

No, TLV75519PDQNR does not require an external pull-up on EN. The device has no internal pull-up; EN is a high-impedance CMOS input with leakage <10nA. To enable continuously, connect EN directly to IN. To control via MCU, drive EN with a GPIO - no external resistor needed unless open-drain logic is used, in which case a 100kΩ pull-up to IN is acceptable.

Can TLV75519PDQNR operate stably with a 0.47µF output capacitor?

Yes - TLV75519PDQNR is specified stable with ≥0.47µF ceramic output capacitance, though 1µF is recommended for optimal transient response and margin. The 0.47µF minimum accounts for 50% DC-bias derating of X5R/X7R ceramics; actual effective capacitance at 1.9V bias must remain ≥0.47µF per datasheet Section 5.3.

What is the thermal shutdown behavior of TLV75519PDQNR?

TLV75519PDQNR triggers thermal shutdown at ~165°C junction temperature and resets at ~155°C. During shutdown, the pass transistor turns off and output is actively discharged. Cycling indicates excessive power dissipation - verify (VIN − 1.9V) × I_OUT and PCB copper area under worst-case ambient conditions. Continuous cycling degrades reliability and must be avoided in final design.

Is TLV75519PDQNR compatible with lead-free reflow profiles?

Yes, TLV75519PDQNR in the X2SON-4 (DQN) package is rated for standard IPC/JEDEC J-STD-020D lead-free reflow, with peak temperature up to 260°C. The package uses NiPdAu terminal finish and meets MSL Level 1 (unlimited floor life at ≤30°C/85% RH), supporting standard SMT assembly without special handling.