Texas Instruments TLV75533PDQNR

Overview

TLV75533PDQNR from Texas Instruments is a 3.3V, 500mA ultra-low-quiescent-current low-dropout (LDO) regulator in a 1mm × 1mm X2SON-4 package. It operates from 1.45V to 5.5V input, delivers ±1% output accuracy at 85°C, features 25μA typical IQ, and maintains regulation with only 1µF ceramic output capacitance. It serves as a precision core or I/O supply for battery-powered microcontrollers in space-constrained portable electronics.

For engineers reviewing the TLV75533PDQNR datasheet, TLV75533PDQNR pinout, TLV75533PDQNR application, or TLV75533PDQNR equivalent, key selection criteria include dropout voltage at full load (238mV max at 500mA), active output discharge behavior, thermal shutdown threshold (165°C), EN pin logic thresholds (VHI = 1V, VLO = 0.3V), and compatibility with 0.47–200µF ceramic output capacitors.

Technical Context

The TLV75533PDQNR uses a PMOS pass transistor architecture enabling low dropout and high PSRR (46dB at 100kHz). Its internal bandgap reference and error amplifier deliver 1% output accuracy across –40°C to +85°C, while integrated soft-start ensures monotonic VOUT rise and limits inrush current during power-up.

Functional safety features include undervoltage lockout (UVLO rising threshold 1.21–1.44V), foldback current limiting (720mA typ at 3.3V), and thermal shutdown with 10°C hysteresis (trip at 165°C, reset at 155°C). The device enters shutdown when EN < 0.3V and actively discharges OUT via a 120Ω internal pulldown resistor.

Key Specifications

Pinout & Package

TLV75533PDQNR is housed in a 1mm × 1mm, 4-pin X2SON (DQN) package with wettable flanks for automated optical inspection. The package has no exposed thermal pad and requires minimal PCB footprint - ideal for ultra-compact wearables and IoT edge nodes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TLS850F3TLE and MCP1703T-3302E/MB, TLV75533PDQNR uniquely balances 500mA capability, 25μA IQ, active discharge, and 1mm² X2SON packaging - making it optimal for high-density, battery-sensitive industrial and consumer edge devices where automotive qualification or extreme ultra-low-IQ are not mandatory.

Availability

TLV75533PDQNR is available at Aetrix Electronics and suitable for portable medical sensors, wearable fitness trackers, smart home edge nodes, and industrial handheld scanners requiring stable component supply with consistent lead times and volume pricing.

Supply support for TLV75533PDQNR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with decades of LDO design expertise and broad industrial qualification coverage.

The TLV755P family was engineered for space-constrained, battery-powered applications demanding high accuracy, low IQ, and small-footprint packaging - targeting next-generation wearables, IoT endpoints, and portable instrumentation.

FAQ

What is the maximum input voltage rating for TLV75533PDQNR?

The absolute maximum input voltage for TLV75533PDQNR is 6.0V. However, the recommended operating range is 1.45V to 5.5V. Exceeding 5.5V may cause permanent damage or degrade long-term reliability, even if within the absolute maximum rating. Always maintain VIN ≤ 5.5V in normal operation to ensure compliance with TI's specified electrical characteristics and thermal performance for TLV75533PDQNR.

Does TLV75533PDQNR require an input capacitor, and what value is recommended?

Yes, TLV75533PDQNR requires a minimum 1µF ceramic input capacitor placed as close as possible to the IN and GND pins. This capacitor stabilizes the input supply during load transients and reduces high-frequency noise coupling. X5R or X7R dielectrics are recommended for stable capacitance across temperature and DC bias. Using less than 1µF risks instability or degraded line-transient response in TLV75533PDQNR applications.

Can TLV75533PDQNR be used without connecting the EN pin?

Yes, TLV75533PDQNR can operate without an external EN signal by tying the EN pin directly to IN. In this configuration, the regulator powers up whenever VIN is applied and remains enabled as long as VIN stays within the operating range. The internal pull-down ensures safe default-off behavior if EN is left floating, but TI recommends explicit connection to avoid noise-induced toggling - especially important in noisy industrial environments for TLV75533PDQNR deployments.

What is the thermal resistance (RθJA) of TLV75533PDQNR in its X2SON-4 package?

The JEDEC-standard RθJA for TLV75533PDQNR in the DQN (X2SON-4) package is 168.4°C/W. This value assumes a 2-layer PCB with no thermal vias to internal planes. Real-world performance improves significantly with copper pour on top/bottom layers and thermal vias under the package. For accurate thermal design, use the characterization parameters ψJT (5.6°C/W) and ψJB (101.7°C/W) from the datasheet to model heat flow paths specific to your layout for TLV75533PDQNR.

Is TLV75533PDQNR compatible with ceramic output capacitors smaller than 1µF?

No - TLV75533PDQNR is only guaranteed stable with output capacitance ≥1µF. While the minimum effective capacitance at the pin must exceed 0.47µF (accounting for DC bias derating), TI's stability testing and compensation design assume ≥1µF nominal ceramic capacitance. Using <1µF risks oscillation, poor load transient response, or startup failure. Always verify capacitor voltage rating and DC bias curve to ensure ≥1µF effective value under operating conditions for TLV75533PDQNR.