Texas Instruments TLV75533PDQNRM3

Overview

TLV75533PDQNRM3 from Texas Instruments is a 3.3V, 500mA fixed-output low-dropout regulator (LDO) in a 1mm × 1mm X2SON-4 package. It operates from 1.45V to 5.5V input, delivers 1% output accuracy at 85°C, achieves 238mV max dropout at 500mA, and consumes only 25μA typical quiescent current - enabling long battery life in space-constrained portable electronics.

For engineers reviewing the TLV75533PDQNRM3 datasheet, TLV75533PDQNRM3 pinout, TLV75533PDQNRM3 application, or TLV75533PDQNRM3 equivalent, key selection criteria include ultra-small footprint, active output discharge, foldback current limiting, thermal shutdown, and stability with 1µF ceramic output capacitance.

Technical Context

The TLV75533PDQNRM3 integrates a PMOS pass transistor with precision band-gap reference and error amplifier to achieve ±1.2% output accuracy over temperature for 3.3V output. Its internal soft-start ensures monotonic V_OUT rise and limits inrush current during power-up.

Functional modes include normal regulation (VIN ≥ V_OUT + V_DO, EN > V_HI), dropout operation (VIN < V_OUT + V_DO), and disabled state (EN < V_LO) with active 120Ω pulldown to ground. Undervoltage lockout (1.21–1.44V) and thermal shutdown (165°C trip, 155°C reset) provide robust system-level protection.

Key Specifications

Pinout & Package

TLV75533PDQNRM3 uses the 1mm × 1mm, 4-pin X2SON (DQN) package with wettable flanks, optimized for automated optical inspection (AOI) and high-density PCB layouts. Thermal pad is internally connected to GND and must be soldered to a large-area ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TLC75533PDQNR and MCP1755ST-3302E/DB, TLV75533PDQNRM3 uniquely combines 1mm × 1mm size, 238mV dropout, 25μA IQ, and active output discharge - making it optimal for miniaturized, battery-powered systems requiring precise power sequencing and robust fault handling.

Availability

TLV75533PDQNRM3 is available at Aetrix Electronics and suitable for portable medical sensors, wearable fitness trackers, smart home IoT hubs, and industrial edge sensor nodes requiring stable component supply across design-in, prototyping, and volume production phases.

Supply support for TLV75533PDQNRM3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog and embedded processing technologies, with leadership in power management innovation.

The TLV755P family was designed for space-constrained, battery-powered applications demanding ultra-low IQ, small solution size, and high reliability - targeting portable electronics, wearables, and industrial IoT endpoints.

FAQ

What is the maximum dropout voltage of TLV75533PDQNRM3 at full 500mA load?

The maximum dropout voltage of TLV75533PDQNRM3 is 238mV at 500mA load and −40°C to +85°C junction temperature. This value is specified for the 3.3V output variant in the DQN package and ensures reliable regulation down to ~3.06V input, supporting single-cell Li-ion and other low-headroom sources.

Does TLV75533PDQNRM3 require an external pull-up resistor on the EN pin?

No, TLV75533PDQNRM3 does not require an external pull-up on EN. The device has no internal pull-up; however, EN is CMOS-compatible with 10nA leakage. To ensure reliable startup, tie EN directly to IN or drive it with a logic signal ≥1V. Leaving EN floating may cause undefined behavior.

Can TLV75533PDQNRM3 operate with less than 1µF output capacitance?

No - TLV75533PDQNRM3 requires ≥1µF ceramic output capacitance for guaranteed stability per the datasheet. While minimum effective capacitance is 0.47µF (accounting for DC bias derating), using <1µF risks oscillation or poor transient response. Always place the capacitor within 2mm of the OUT and GND pins.

What thermal performance can be expected from TLV75533PDQNRM3 in the X2SON-4 package?

In JEDEC-standard PCB conditions, TLV75533PDQNRM3 (DQN) has R_θJA = 168.4°C/W. With proper thermal pad soldering to a 100mm² copper pour, practical R_θJA improves to ~75°C/W. At 500mA and 3.3V output from 5V input, power dissipation is ~0.85W - requiring careful thermal design to stay below 125°C junction limit.

Is TLV75533PDQNRM3 compatible with automotive AEC-Q200 requirements?

No, TLV75533PDQNRM3 is not AEC-Q200 qualified. It is rated for −40°C to +125°C operating junction temperature and intended for industrial, consumer, and medical applications. For automotive-grade alternatives, consider TI's TPS7B8x-Q1 series or contact Aetrix for qualified equivalents.