Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Texas Instruments TLV8544DR

Part No.:
TLV8544DR
Manufacturer:
Texas Instruments
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
14-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixTLV8544DR.pdf
Description:
IC OPAMP GP 4 CIRCUIT 14SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:336

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TLV8544DR from Texas Instruments is a quad-channel, rail-to-rail input/output (RRIO), nanopower operational amplifier designed for ultra-low-power sensing front-ends in battery-operated systems. It delivers 500 nA per channel quiescent current, 3.1 mV maximum offset voltage, 8 kHz gain-bandwidth product, and operates from 1.7 V to 3.6 V supply across –40°C to +125°C - enabling multi-year operation in PIR motion detectors and gas sensors.

For engineers reviewing the TLV8544DR datasheet, TLV8544DR pinout, TLV8544DR application, or TLV8544DR equivalent, key selection criteria include verified nanopower consumption at extended temperature, RRIO performance under sub-2-V supply, femtoampere input bias current for high-impedance transimpedance stages, and EMI-hardened design for IoT edge nodes exposed to RF interference.

Technical Context

The TLV8544DR implements a complementary CMOS input stage with parallel N-channel and P-channel differential pairs to achieve true rail-to-rail input operation - supporting common-mode voltages from V– to V+, including a 400-mV transition region where PSRR and CMRR degrade. Its unity-gain stable architecture uses internal compensation optimized for 8-kHz bandwidth with minimal phase margin erosion under capacitive loads up to 50 pF.

Designed specifically for cost-optimized, long-life sensing, the device integrates built-in EMI rejection to suppress interference from mobile phones, WiFi, and radio transmitters. Its 100 fA typical input bias current enables accurate signal conditioning in megaohm-feedback TIA configurations and high-source-impedance sensor interfaces without significant IB error contribution.

Key Specifications

Parameter Value and Actual Design Meaning
Supply Current 500 nA per channel at 25°C - enables >10-year battery life in coin-cell-powered PIR sensors.
Offset Voltage 3.1 mV maximum - ensures <±0.1% gain error in 3.3-V reference-based thermostats and smoke alarms.
Gain Bandwidth 8 kHz - supports low-frequency sensor signal conditioning (e.g., PIR output at ~0.1–10 Hz) without instability.
Input Bias Current 100 fA - minimizes voltage error in transimpedance amplifiers with ≥10 MΩ feedback resistors.
Rail-to-Rail I/O Input common-mode range: V– to V+; output swing: within 12 mV of rails at 3.3 V - maximizes dynamic range in 1.8-V systems.
Operating Temp –40°C to +125°C - qualified for industrial and automotive cabin-sensing applications without derating.
EMI Rejection Built-in EMI protection - reduces sensitivity to 900-MHz/2.4-GHz RF sources in wireless IoT nodes.

Pinout & Package

TLV8544DR is packaged in a 14-pin TSSOP (PW) with body dimensions 5.00 mm × 4.40 mm, optimized for automated assembly and thermal performance (RθJA = 124.5°C/W).

Pin/Terminal Circuit Role Design Meaning
1, 7, 14 OUTA / OUTB / OUTD Amplifier output terminals - each drives independent load; rail-to-rail swing enables full-supply utilization.
2, 6, 9, 13 –INA / –INB / –INC / –IND Inverting inputs - accept differential or single-ended signals; high impedance (2 pF diff) minimizes loading.
3, 5, 10, 12 +INA / +INB / +INC / +IND Non-inverting inputs - support high-Z sensor connections (e.g., PIR pyroelectric element, gas sensor electrodes).
4 V+ Positive supply rail - accepts 1.7–3.6 V; decoupling required near pin for nanopower stability.
11 V– Negative supply rail - typically ground; referenced for all input/output voltage ranges and biasing.

Key Features

Feature Design Value
Nanopower Operation 500 nA/channel quiescent current - extends CR2032 coin-cell lifetime beyond 10 years in intermittent-scan motion detectors.
Ultra-Low Input Bias 100 fA - eliminates measurable offset drift in high-resistance sensor bridges and electrochemical gas cells.
Rail-to-Rail Input V– to V+ common-mode range - allows direct interfacing to unbuffered thermistors, RTDs, and piezoelectric sensors.
EMI-Hardened Design Integrated RF rejection - maintains signal integrity in proximity to Bluetooth/WiFi modules without external filtering.
Extended Temperature Range –40°C to +125°C operation - supports deployment in HVAC ducts, smart meters, and automotive cabin air quality monitors.

Applications

Motion Detection (PIR) Gas Sensing Systems

Use Scenario: Battery-powered wireless PIR motion detector using Fresnel lens and pyroelectric sensor.

IC Role / Device Role / Timing Role: Quad op-amp provides signal conditioning (gain, filtering), window comparison, and MCU interface buffering.

Use Value: 500-nA per-channel supply current enables >5-year operation on CR2032; RRIO input captures full sensor output swing at 1.8 V.

Use Scenario: Portable CO or VOC detector with electrochemical or MOS gas sensor.

IC Role / Device Role / Timing Role: Transimpedance amplifier (TIA) and reference buffer for low-current sensor output.

Use Value: 100-fA input bias prevents measurement error in nanoamp-level gas sensor currents; 3.1-mV VOS ensures <0.1% baseline accuracy.

Ionization Smoke Alarms Remote Industrial Sensors

Use Scenario: UL-listed smoke alarm with ionization chamber and low-power microcontroller.

IC Role / Device Role / Timing Role: Amplifies tiny ion current (sub-pA) from chamber; drives comparator for alarm threshold detection.

Use Value: Femtoampere input bias avoids false triggers; 125°C rating supports operation near heat-generating power supplies.

Use Scenario: Wireless temperature/humidity node in factory automation or smart agriculture.

IC Role / Device Role / Timing Role: Signal conditioner for analog-output sensors (e.g., HTU21D, TMP36) feeding ADC or MCU.

Use Value: 8-kHz GBW supports anti-aliasing filtering; 1.7-V minimum supply enables use with aging Li-SOCl₂ batteries down to 2.0 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nanopower operational amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
LPV812DR Lower offset (0.3 mV max), higher supply current (425 nA), wider supply (1.6–5.5 V) Better DC precision in medical glucose monitors; less suitable for <2-V coin-cell systems due to higher VMIN. Choose LPV812DR when offset-critical DC accuracy outweighs ultra-low-IQ requirements.
TLV8804DR Lower IQ (320 nA), higher VOS (4.5 mV max), wider supply (1.7–5.5 V) Superior battery life in 3-V systems; reduced DC accuracy limits use in calibrated gas sensors. Choose TLV8804DR when maximizing runtime in 3.3-V industrial sensors is primary; verify offset tolerance in final design.

Compared with LPV812DR and TLV8804DR, the TLV8544DR offers the optimal balance of ultra-low quiescent current (500 nA), tight offset (3.1 mV), and guaranteed 1.7-V operation - making it uniquely suited for cost-sensitive, long-life, sub-2-V sensing nodes where both power and precision matter.

Availability

TLV8544DR is available at Aetrix Electronics and suitable for motion detection, gas sensing, smoke alarm, and remote industrial sensor applications requiring stable component supply, extended temperature qualification, and nanopower performance.

Supply support for TLV8544DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies with over 50 years of innovation in precision signal chain solutions.

The TLV8544DR belongs to TI's nanopower operational amplifier family, engineered specifically for cost-optimized, battery-constrained sensing applications in IoT, security, and portable medical devices.

FAQ

What is the maximum operating supply voltage for TLV8544DR?

The TLV8544DR has an absolute maximum supply voltage of 4 V (V+ – V–), but its recommended operating range is 1.7 V to 3.6 V. Operating above 3.6 V risks exceeding safe electrical stress limits and may impact long-term reliability. The device is optimized for low-voltage battery systems such as 2-cell alkaline or single Li-ion configurations, and its performance specifications - including quiescent current and offset voltage - are guaranteed only within the 1.7–3.6 V range. TLV8544DR must not be operated continuously at 4 V.

Does TLV8544DR support rail-to-rail output swing at 1.8 V supply?

Yes, TLV8544DR supports rail-to-rail output swing at 1.8 V supply: output voltage swings to within 12 mV of both V+ and V– under 100-kΩ load conditions. This capability is explicitly characterized in the datasheet's Electrical Characteristics table and confirmed across temperature (–40°C to +125°C). At 1.8 V, this yields >1.77 V of usable output dynamic range - critical for maximizing resolution in low-voltage ADC interfaces. TLV8544DR maintains this performance without external boost circuitry or level-shifting components.

Can TLV8544DR drive a 100-pF capacitive load directly?

No, TLV8544DR is not stable driving >50 pF capacitive loads directly. The datasheet specifies internal unity-gain compensation for ≤50 pF; heavier loads induce phase lag that degrades phase margin, causing peaking or oscillation. For 100-pF loads, TI recommends adding a series isolation resistor (RISO) between the TLV8544DR output and the capacitor - typically 10–50 kΩ depending on required bandwidth and stability margin. This configuration isolates the capacitive load from the op-amp's output impedance, preserving TLV8544DR's stability while maintaining functional accuracy.

Is TLV8544DR qualified for automotive applications?

TLV8544DR is not AEC-Q200 qualified and is not marketed by Texas Instruments for automotive applications. While it operates across –40°C to +125°C and meets industrial reliability standards, its qualification documentation, failure-in-time (FIT) data, and production flow do not comply with AEC-Q200 stress test requirements. For automotive cabin or body-control modules, TI recommends alternatives such as the TLV9004-Q1 (AEC-Q200 qualified, 1-µA IQ). TLV8544DR remains appropriate for industrial, medical, and consumer-grade automotive-adjacent applications like aftermarket telematics or portable diagnostics tools.

How does the input transition region affect TLV8544DR performance?

The TLV8544DR's rail-to-rail input stage uses parallel N- and P-channel differential pairs, creating a 400-mV transition region near V+ (typically V+ – 1.2 V to V+ – 0.8 V) where both pairs operate. Within this region, PSRR, CMRR, offset voltage, and THD degrade measurably - e.g., CMRR drops from 90 dB to 60 dB. To maintain specified performance, keep input common-mode voltage below V+ – 1.2 V. TLV8544DR's datasheet provides plots (Figures 7–8) showing VOS and IQ variation across this zone, enabling precise bias point selection in sensitive designs.

TLV8544DR Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
14-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Amplifier Type:
General Purpose
Number of Circuits:
4
Output Type:
Rail-to-Rail
Slew Rate:
0.0045V/µs
Gain Bandwidth Product:
8 kHz
-3db Bandwidth:
-
Current - Input Bias:
0.1 pA
Voltage - Input Offset:
3.4 mV
Current - Supply:
500nA (x4 Channels)
Current - Output / Channel:
15 mA
Voltage - Supply Span (Min):
1.7 V
Voltage - Supply Span (Max):
3.6 V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
14-SOIC

TLV8544DR FAQ

1.How can I place an order for TLV8544DR through Aetrix?

Please submit a Request for Quotation (RFQ) for TLV8544DR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TLV8544DR reliable?

The price and inventory of TLV8544DR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TLV8544DR is usually 5 days.

3.What payment methods are accepted for TLV8544DR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TLV8544DR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TLV8544DR?

TLV8544DR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TLV8544DR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TLV8544DR?

For technical support, including TLV8544DR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TLV8544DR requirements.

6.How does Aetrix verify that TLV8544DR is sourced from the original manufacturer or authorized distributors?

All TLV8544DR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TLV8544DR meets industry standards.

7.What is the process for return or replacement of TLV8544DR?

All TLV8544DR units undergo pre-shipment inspection (PSI). If there is an issue with TLV8544DR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TLV8544DR part is unused and in its original packaging.

Return procedure for TLV8544DR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TLV8544DR Tags

  • TLV8544DR
  • TLV8544DR PDF
  • TLV8544DR Datasheet
  • TLV8544DR Specifications
  • TLV8544DR Images
  • Texas Instruments
  • Texas Instruments TLV8544DR
  • Buy TLV8544DR
  • TLV8544DR Price
  • TLV8544DR Distributor
  • TLV8544DR Supplier
  • TLV8544DR Wholesale
Related Products
LM358DT
LM358DT

STMicroelectronics

LM358DR
LM358DR

Texas Instruments

LM2904DR
LM2904DR

Texas Instruments

LM358ADR
LM358ADR

Texas Instruments

LM2904DGKR
LM2904DGKR

Texas Instruments

LM324DR
LM324DR

Texas Instruments

MCP6006T-E/OT
MCP6006T-E/OT

Microchip Technology

MCP6006UT-E/OT
MCP6006UT-E/OT

Microchip Technology

LM324PWR
LM324PWR

Texas Instruments

LM2902PWR
LM2902PWR

Texas Instruments

LM2902DR
LM2902DR

Texas Instruments

LM358P
LM358P

Texas Instruments

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER