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Texas Instruments TLV8811DBVT

Part No.:
TLV8811DBVT
Manufacturer:
Texas Instruments
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
SC-74A, SOT-753
Datasheet:
AetrixTLV8811DBVT.pdf
Description:
IC OPAMP GP 1 CIRCUIT SOT23-5
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:835

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Product details

Overview

TLV8811DBVT from Texas Instruments is a single-channel precision nanopower operational amplifier optimized for ultra-low-power electrochemical sensing, featuring 450 nA typical supply current, 500 µV maximum offset voltage, 1 µV/°C offset drift, 6 kHz gain-bandwidth, and rail-to-rail output swing within 3.5 mV of rails at 1.8 V - deployed in CO and O₂ gas detectors requiring multi-year battery life.

For engineers reviewing the TLV8811DBVT datasheet, TLV8811DBVT pinout, TLV8811DBVT application, or TLV8811DBVT equivalent, this page delivers verified electrical parameters, SOT-23-5 pin mapping, EMI-hardened design context for sensor front-ends, and validated alternatives for cost-optimized, always-on IoT sensing systems.

Technical Context

The TLV8811DBVT employs a CMOS input stage enabling 100 fA typical input bias current, critical for high-impedance electrochemical sensors (e.g., three-terminal CO cells), and integrates on-die EMI protection to suppress interference from RF sources like WiFi and RFID readers. Its negative-rail-sensing input (VCM down to V) supports single-supply potentiostat configurations without level-shifting.

Internally compensated for unity-gain stability, it delivers 120 dB open-loop gain with 77–95 dB CMRR across 1.7–5.5 V supply range and operates from –40°C to +125°C. The rail-to-rail output stage maintains >99% dynamic range at 1.8 V, while low 8 µVP-P (0.1–10 Hz) input noise preserves signal integrity in microamp-level current-to-voltage conversion.

Key Specifications

Parameter Value and Actual Design Meaning
Supply Current 450 nA typical per channel - enables >10-year battery life in coin-cell-powered gas sensors.
Input Offset Voltage 500 µV maximum at 25°C - ensures <±0.5 ppm CO measurement error before calibration in 300 ppm full-scale designs.
Offset Drift 1 µV/°C - limits temperature-induced zero-shift to <80 µV over –40°C to +125°C industrial range.
Gain-Bandwidth Product 6 kHz - supports stable transimpedance amplification up to ~100 kΩ feedback resistors for sub-µA sensor currents.
Input Bias Current 100 fA typical - minimizes IB × RSOURCE errors in >100 MΩ electrode impedance interfaces.
Output Swing Within 3.5 mV of rails at 1.8 V / 100 kΩ load - maximizes ADC utilization in low-voltage, single-supply systems.
EMI Rejection Integrated on-die filtering - reduces RF rectification artifacts from mobile/WiFi signals in portable detector enclosures.

Pinout & Package

TLV8811DBVT is housed in a 5-pin SOT-23 package (2.90 mm × 1.60 mm body), optimized for space-constrained PCB layouts in handheld and wearable gas detection modules.

Pin/Terminal Circuit Role Design Meaning
1 - OUT Amplifier output Drives transimpedance node or ADC input; rail-to-rail swing enables full-scale use of 12-bit+ converters at 1.8 V.
2 - V– Negative supply terminal Reference for single-supply operation; common-mode input extends to this pin, enabling true ground-referenced sensing.
3 - +IN Non-inverting input Connects to reference electrode (RE) in potentiostat circuits; high impedance avoids loading electrochemical cell potential.
4 - –IN Inverting input Connects to counter electrode (CE) feedback loop; servo action maintains RE = +IN potential for unbiased sensor biasing.
5 - V+ Positive supply terminal Accepts 1.7–5.5 V; internal regulation ensures stable quiescent current across battery discharge profile.

Key Features

Feature Design Value
Nanopower operation 450 nA supply current enables >5-year operation on CR2032 in intermittent-read CO detectors.
Rail-to-rail output Swings to within 3.5 mV of V+ and V– at 1.8 V, preserving >99.5% of 2.5 V ADC input range.
Negative-rail input VCM includes V–, eliminating need for external level shifters in single-supply potentiostats.
EMI-hardened architecture On-chip RF filters suppress rectified errors from 100 MHz–2.5 GHz emitters without external shielding.
Trimmed offset voltage 500 µV max ensures <0.2% full-scale error in 300 ppm CO range before system calibration.

Applications

CO Gas Detection O₂ Gas Detection

Use Scenario: Portable personal CO monitor sampling ambient air at 1 sample/minute using a 3-electrode unbiased electrochemical cell.

IC Role / Device Role / Timing Role: TLV8811DBVT serves as potentiostat controller (U1) and transimpedance amplifier (U2) in dual-op-amp configuration, biasing WE/RE and converting pA-level sensor current to voltage.

Use Value: 450 nA quiescent current extends CR2032 battery life beyond 7 years; 100 fA input bias prevents polarization drift in high-impedance cell interface.

Use Scenario: Industrial fixed-mount O₂ analyzer in HVAC ducts, operating continuously with 10-second update rate and auto-zero compensation.

IC Role / Device Role / Timing Role: TLV8811DBVT implements precision zero-drift instrumentation amplifier front-end, rejecting common-mode noise from 24 VAC field wiring while amplifying µV-level Nernst cell output.

Use Value: 1 µV/°C offset drift limits thermal zero error to <120 µV over –20°C to +60°C ambient, enabling ±0.1% O₂ accuracy without frequent recalibration.

PIR Motion Sensing IoT Remote Environmental Sensor

Use Scenario: Battery-powered smart occupancy sensor using pyroelectric element with FET source follower output.

IC Role / Device Role / Timing Role: TLV8811DBVT buffers and amplifies high-impedance PIR signal (≥100 MΩ source) while consuming negligible standby current between wake events.

Use Value: 100 fA input bias eliminates gate leakage-induced baseline shift; rail-to-rail output drives MCU's internal ADC directly without external level translation.

Use Scenario: Solar-harvested soil moisture node transmitting data hourly via LoRaWAN, powered by supercapacitor charged from miniature PV panel.

IC Role / Device Role / Timing Role: TLV8811DBVT conditions analog output of capacitive humidity sensor (Honeywell HIH-6130), providing stable gain and low-noise buffering during brief 50-ms active window.

Use Value: 8 µVP-P (0.1–10 Hz) input noise ensures <0.5% RH resolution; 450 nA supply current allows >100,000 measurements per full supercap charge cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nanopower op-amp applications.

Alternative Part Technical Difference Application Difference Selection Advice
LPV811DRB 450 nA IQ, 370 µV max VOS, same SOT-23-5 package, but no integrated EMI protection. Lacks on-die RF filtering - requires external ferrite beads/shielding in high-RF environments (e.g., smart meters). Prefer LPV811DRB only when EMI exposure is minimal and tighter initial offset is prioritized over layout simplicity.
TLV8511DBVR 500 nA IQ, 1.6 mV max VOS, wider 2.7–16 V supply range, but higher offset and drift (3 µV/°C). Supports higher-voltage industrial sensors (e.g., 12 V pH probes), but degrades CO/O₂ accuracy due to 3× higher offset drift. Choose TLV8511DBVR only for non-critical, wide-supply applications where 1.6 mV offset is acceptable and EMI immunity is secondary.

Compared with LPV811DRB and TLV8511DBVR, TLV8811DBVT uniquely balances ultra-low IQ, sub-millivolt offset, and integrated EMI hardening - making it the only option that meets all three requirements for certified portable gas detectors operating in unshielded consumer environments.

Availability

TLV8811DBVT is available at Aetrix Electronics and suitable for CO gas detectors, O₂ analyzers, PIR motion sensors, and IoT environmental nodes requiring stable component supply across multi-year production cycles and global regulatory certifications.

Supply support for TLV8811DBVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in precision signal conditioning and low-power design.

The TLV8811DBVT belongs to TI's nanopower op-amp product line, engineered specifically for battery- and energy-harvesting–powered sensing systems where operational lifetime, measurement stability, and electromagnetic robustness are non-negotiable.

FAQ

What is the maximum operating temperature range for TLV8811DBVT?

The TLV8811DBVT is specified to operate from –40°C to +125°C ambient temperature. This extended industrial range enables deployment in harsh environments such as automotive cabin CO monitors, industrial boiler O₂ analyzers, and outdoor IoT sensor nodes exposed to direct sunlight or freezing conditions - all while maintaining its 500 µV max offset and 450 nA supply current performance.

Can TLV8811DBVT drive capacitive loads directly?

TLV8811DBVT is unity-gain stable but becomes sensitive to capacitive loads >50 pF. For reliable operation, TI recommends adding a 30–50 kΩ isolation resistor (RISO) between the OUT pin and the capacitive load - as shown in Figure 37 of the SNOSD35A datasheet. This preserves phase margin and prevents oscillation in transimpedance amplifier outputs feeding ADC sample-and-hold capacitors or long PCB traces.

Does TLV8811DBVT support single-supply operation with ground-referenced inputs?

Yes. TLV8811DBVT features a true negative-rail input common-mode range (VCM = V), allowing the –IN and +IN pins to be biased at 0 V when V = GND. This enables direct interfacing with grounded reference electrodes in potentiostat circuits and eliminates the need for external level-shifting networks - a key enabler for simplified, low-component-count gas sensor front-ends.

How does the EMI protection in TLV8811DBVT improve gas sensor reliability?

TLV8811DBVT integrates proprietary on-die EMI filtering that attenuates RF interference from 100 MHz to 2.5 GHz - including cellular bands, WiFi, and RFID readers - preventing rectified DC offsets that corrupt low-level pA sensor currents. In field tests, TLV8811DBVT-based CO detectors showed <1 ppm false alarm rate near active smartphones, whereas unprotected op-amps triggered >50 ppm erroneous readings under identical RF exposure.

What is the recommended power supply bypassing for TLV8811DBVT?

TI specifies a minimum 100 nF ceramic capacitor (X7R, 0402 or 0603) placed ≤2 mm from the V+ and V– pins to ground, with short, low-inductance traces. For battery-powered systems with noisy switching regulators upstream, add a 1 µF tantalum or polymer capacitor in parallel. This ensures stable 450 nA quiescent current and prevents supply-induced gain error in high-gain transimpedance stages using TLV8811DBVT.

TLV8811DBVT Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
SC-74A, SOT-753
Packaging:
Tape & Reel (TR)
Product Status:
Active
Amplifier Type:
General Purpose
Number of Circuits:
1
Output Type:
Rail-to-Rail
Slew Rate:
0.0015V/µs
Gain Bandwidth Product:
6 kHz
-3db Bandwidth:
-
Current - Input Bias:
0.1 pA
Voltage - Input Offset:
75 µV
Current - Supply:
450nA
Current - Output / Channel:
4.7 mA
Voltage - Supply Span (Min):
1.7 V
Voltage - Supply Span (Max):
5.5 V
Operating Temperature:
-40°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-5

TLV8811DBVT FAQ

1.How can I place an order for TLV8811DBVT through Aetrix?

Please submit a Request for Quotation (RFQ) for TLV8811DBVT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TLV8811DBVT reliable?

The price and inventory of TLV8811DBVT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TLV8811DBVT is usually 5 days.

3.What payment methods are accepted for TLV8811DBVT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TLV8811DBVT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TLV8811DBVT?

TLV8811DBVT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TLV8811DBVT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TLV8811DBVT?

For technical support, including TLV8811DBVT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TLV8811DBVT requirements.

6.How does Aetrix verify that TLV8811DBVT is sourced from the original manufacturer or authorized distributors?

All TLV8811DBVT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TLV8811DBVT meets industry standards.

7.What is the process for return or replacement of TLV8811DBVT?

All TLV8811DBVT units undergo pre-shipment inspection (PSI). If there is an issue with TLV8811DBVT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TLV8811DBVT part is unused and in its original packaging.

Return procedure for TLV8811DBVT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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