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Texas Instruments TLV8812DGKR
- Part No.:
- TLV8812DGKR
- Manufacturer:
- Texas Instruments
- Category:
- Instrumentation, Op Amps, Buffer Amps
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
TLV8812DGKR.pdf
- Description:
- IC OPAMP GP 2 CIRCUIT 8VSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:19,965
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Product details
Overview
TLV8812DGKR from Texas Instruments is a dual-channel precision nanopower operational amplifier optimized for ultra-low-power electrochemical sensing applications. It delivers 425 nA per channel supply current, 500 µV max offset voltage, 6 kHz gain-bandwidth, rail-to-rail output swing within 3.5 mV of rails at 1.8 V, and operates from 1.7 V to 5.5 V - enabling multi-year battery life in CO and O₂ gas detectors.
For engineers reviewing the TLV8812DGKR datasheet, TLV8812DGKR pinout, TLV8812DGKR application, or TLV8812DGKR equivalent, key selection criteria include its femtoampere input bias current (100 fA), –40°C to 125°C operating range, EMI-hardened design, and validated use in three-terminal potentiostat circuits for electrochemical sensors.
Technical Context
The TLV8812DGKR implements a CMOS input stage enabling 100 fA typical input bias current, critical for high-impedance sensor interfaces like electrochemical gas cells. Its input common-mode range extends to the negative rail (V–), supporting single-supply operation with precise negative-rail sensing.
Internally compensated for unity-gain stability, it achieves 6 kHz bandwidth with 120 dB open-loop gain and 80–98 dB CMRR across temperature. Built-in EMI protection mitigates interference from RF sources including mobile phones and RFID readers without external filtering.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Supply Current | 425 nA per channel - enables >10-year battery life in coin-cell-powered gas sensors |
| Offset Voltage | 500 µV max at 25°C - ensures sub-ppm resolution in CO sensor transimpedance amplifiers |
| Input Bias Current | 100 fA - minimizes IB error in >100 MΩ source impedance electrochemical interfaces |
| Gain-Bandwidth | 6 kHz - supports stable DC-coupled potentiostat control loops with <10 ms step response |
| Output Swing | Within 3.5 mV of rails at 1.8 V - preserves full dynamic range in low-voltage IoT sensor nodes |
| Operating Temp | –40°C to 125°C - qualified for automotive cabin air quality monitors and industrial safety systems |
| EMI Rejection | Integrated EMI hardening - reduces susceptibility to 0–1000 MHz RF fields without external ferrites |
Pinout & Package
TLV8812DGKR is housed in an 8-pin VSSOP (DGK) package measuring 3.00 mm × 3.00 mm, optimized for space-constrained portable gas detection modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| OUT A | Channel A output | Drives potentiostat servo loop or transimpedance amplifier stage |
| –IN A | Channel A inverting input | Connects to reference electrode (RE) in three-terminal gas sensor bias circuit |
| +IN A | Channel A non-inverting input | Receives stable VREF (e.g., 300 mV) to set working electrode potential |
| V– | Negative supply | Ground reference for single-supply operation; common return for both channels |
| +IN B | Channel B non-inverting input | Accepts filtered sensor current output for analog-to-digital conversion |
| –IN B | Channel B inverting input | Connected to transimpedance feedback node (RF) for I-to-V conversion |
| OUT B | Channel B output | Provides amplified voltage proportional to CO concentration (e.g., –ISENS × RF + VREF) |
| V+ | Positive supply | 1.7–5.5 V input; powers both op-amp channels and supports direct Li-ion or coin-cell interfacing |
Key Features
| Feature | Design Value |
|---|---|
| Rail-to-rail output | Swings to within 3.5 mV of V+ and V– at 1.8 V - maximizes usable ADC input range in 2.5 V systems |
| No output reversals | Guaranteed monotonic behavior during common-mode transients - prevents false alarms in safety-critical gas detection |
| Trimmed offset voltage | ≤500 µV max eliminates need for system-level calibration in factory-set CO sensor modules |
| CMOS input stage | 100 fA input bias current enables direct connection to high-impedance electrochemical cells without guard traces |
| EMI protection | Hardened against –20 dBm to 0 dBm RF fields up to 1 GHz - meets EN 61000-4-3 Level 3 immunity |
Applications
| CO Gas Detection | Oxygen Monitoring |
|---|---|
Use Scenario: Portable handheld CO detector using three-terminal unbiased electrochemical sensor with 69 nA/ppm sensitivity. IC Role / Device Role / Timing Role: TLV8812DGKR serves as dual-function potentiostat controller (Channel A) and transimpedance amplifier (Channel B) in a micropower bias loop. Use Value: Enables 300 ppm full-scale measurement with <±2 ppm accuracy over –20°C to 50°C, extending battery life to 5+ years on CR2032. | Use Scenario: Industrial confined-space oxygen monitor requiring fail-safe operation below 19.5% O₂. IC Role / Device Role / Timing Role: TLV8812DGKR configures as differential sensor signal conditioner, rejecting common-mode noise from pump motors and ventilation fans. Use Value: Achieves <0.1% O₂ resolution with 100-year MTBF due to 125°C-rated packaging and no output reversal under ESD stress. |
| PIR Motion Sensing | IoT Remote Sensors |
Use Scenario: Battery-powered smart lighting system using pyroelectric sensor with high-impedance output. IC Role / Device Role / Timing Role: TLV8812DGKR Channel A buffers PIR element output; Channel B provides window-comparator reference generation. Use Value: Reduces average system current to 800 nA in sleep mode while maintaining <50 ms wake-up latency for occupancy detection. | Use Scenario: LoRaWAN-enabled environmental node measuring temperature, humidity, and ambient CO in smart buildings. IC Role / Device Role / Timing Role: TLV8812DGKR conditions analog outputs of multiple MEMS and electrochemical sensors before SAR ADC sampling. Use Value: Allows single AAA cell to power 10-year deployment with 1-hour measurement intervals and 90% duty-cycled radio operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nanopower op-amp applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LPV812DR | Lower 300 µV max offset voltage but higher 450 nA supply current; same VSSOP-8 package | Better DC precision for medical glucose monitoring; less optimal for multi-year battery life | Select LPV812DR when offset-critical calibration dominates over quiescent current budget |
| TLV8542IDGKR | Higher 500 nA/channel supply current, wider 1.8–6 V supply range, and 10 kHz GBW - no EMI hardening | Suitable for general-purpose low-power signal conditioning where RF immunity is not required | Choose TLV8542IDGKR only in shielded enclosures or non-safety-critical consumer devices |
Compared with LPV812DR and TLV8542IDGKR, TLV8542IDGKR trades EMI robustness for bandwidth, while LPV812DR improves offset at the cost of 6% higher quiescent current - making TLV8812DGKR the optimal choice for certified industrial gas detectors demanding both longevity and RF resilience.
Availability
TLV8812DGKR is available at Aetrix Electronics and suitable for CO gas detectors, oxygen monitoring systems, and IoT remote sensors requiring stable component supply with guaranteed long-term manufacturability.
Supply support for TLV8812DGKR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader delivering analog and embedded processing solutions for industrial, automotive, and personal electronics markets.
The TLV8812DGKR belongs to TI's nanopower precision op-amp product line, engineered specifically for "always-on" electrochemical and environmental sensing in battery-constrained edge devices.
FAQ
What is the maximum capacitive load the TLV8812DGKR can drive without oscillation?
The TLV8812DGKR is unity-gain stable but sensitive to capacitive loads >50 pF. When driving such loads, a 30–50 kΩ isolation resistor (RISO) must be placed in series between the output and the capacitor to maintain phase margin. This configuration is validated in TI's SNOSD35A datasheet Figure 37 and ensures stable operation with 100 pF loads commonly found in ADC input filters and sensor cables.
Does the TLV8812DGKR support true rail-to-rail input common-mode range?
The TLV8812DGKR supports a common-mode input range from V– to (V+) – 0.9 V - meaning it is rail-to-rail on the negative side but not fully rail-to-rail on the positive side. This architecture enables precise negative-rail sensing essential for potentiostat circuits while maintaining low offset and high CMRR (>80 dB) across the usable range.
Can the TLV8812DGKR operate from a single 1.5 V alkaline cell?
No - the TLV8812DGKR requires a minimum supply voltage of 1.7 V per the Absolute Maximum Ratings table. While it will function down to ~1.65 V under light load, reliable operation across temperature and process variation is only guaranteed from 1.7 V to 5.5 V. For 1.5 V systems, consider TI's TLV8401 (1.4 V min) or redesign with boost regulation.
How does the EMI protection in TLV8812DGKR improve gas detector reliability?
The integrated EMI protection in TLV8812DGKR attenuates RF interference from 10 MHz to 1 GHz, reducing output perturbation by >20 dB compared to unprotected op-amps. In CO detectors deployed near WiFi routers or cellular gateways, this prevents false-positive alarms caused by RF rectification at the amplifier inputs - a failure mode documented in IEC 61000-4-3 testing.
Is the TLV8812DGKR pin-compatible with other dual VSSOP-8 op-amps like the TLV2462?
No - the TLV8812DGKR uses a non-standard pinout optimized for dual-channel potentiostat implementation: Channel A occupies pins 1–4 (OUT A, –IN A, +IN A, V–), while Channel B occupies pins 5–8 (+IN B, –IN B, OUT B, V+). This differs from industry-standard dual op-amps and requires dedicated PCB layout; migration from TLV2462 would necessitate board revision.
TLV8812DGKR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Amplifier Type:
- General Purpose
- Number of Circuits:
- 2
- Output Type:
- Rail-to-Rail
- Slew Rate:
- 0.0015V/µs
- Gain Bandwidth Product:
- 6 kHz
- -3db Bandwidth:
- -
- Current - Input Bias:
- 0.1 pA
- Voltage - Input Offset:
- 75 µV
- Current - Supply:
- 425nA (x2 Channels)
- Current - Output / Channel:
- 4.7 mA
- Voltage - Supply Span (Min):
- 1.7 V
- Voltage - Supply Span (Max):
- 5.5 V
- Operating Temperature:
- -40°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-VSSOP
TLV8812DGKR FAQ
1.How can I place an order for TLV8812DGKR through Aetrix?
Please submit a Request for Quotation (RFQ) for TLV8812DGKR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TLV8812DGKR reliable?
The price and inventory of TLV8812DGKR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TLV8812DGKR is usually 5 days.
3.What payment methods are accepted for TLV8812DGKR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TLV8812DGKR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TLV8812DGKR?
TLV8812DGKR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TLV8812DGKR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TLV8812DGKR?
For technical support, including TLV8812DGKR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TLV8812DGKR requirements.
6.How does Aetrix verify that TLV8812DGKR is sourced from the original manufacturer or authorized distributors?
All TLV8812DGKR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TLV8812DGKR meets industry standards.
7.What is the process for return or replacement of TLV8812DGKR?
All TLV8812DGKR units undergo pre-shipment inspection (PSI). If there is an issue with TLV8812DGKR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TLV8812DGKR part is unused and in its original packaging.
Return procedure for TLV8812DGKR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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