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Texas Instruments TM4100EAD9-80
- Part No.:
- TM4100EAD9-80
- Manufacturer:
- Texas Instruments
- Category:
- Controllers
- Package:
- -
- Datasheet:
-
TM4100EAD9-80.pdf
- Description:
- DRAM MODULE, 4MX9, 80NS
- Quantity:
- Payment:
- Shipping:
Inventory:199
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Product details
Overview
TM4100EAD9-80 from Texas Instruments is a 4,194,304 × 9-bit dynamic RAM module in a 30-pin SIMM form factor, designed for socketed memory expansion in early PC and industrial embedded systems. It operates on a single 5-V supply (±10%), features TTL-compatible I/O, 3-state outputs, and delivers 80 ns RAS-access time with 16 ms refresh interval.
For engineers reviewing the TM4100EAD9-80 datasheet, TM4100EAD9-80 pinout, TM4100EAD9-80 application, or TM4100EAD9-80 equivalent, key selection criteria include CAS9-parity support, common vs. separate CAS control architecture, page-mode timing compliance (50 ns tPC), and compatibility with legacy 30-pin SIMM sockets requiring 0°C to 70°C operation.
Technical Context
The TM4100EAD9-80 implements nine TMS44100DJ 4-Mbit × 1 DRAMs on a single substrate, organized as 4,194,304 × 9 with D9/Q9 dedicated to parity. It uses early-write cycles to avoid bus contention and supports both RAS-only and CBR refresh modes.
Its timing architecture separates CAS control: eight data lines (DQ1–DQ8) share one CAS signal, while D9/Q9 are controlled by CAS9. All address inputs (A0–A10), control signals (RAS, CAS, CAS9, W), and power pins conform to TTL voltage thresholds and drive specifications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 4,194,304 × 9 bits (36 Mbit total); D9/Q9 reserved for parity generation/verification |
| Access Time (tRAC) | 80 ns max - defines minimum RAS-to-data valid delay in random access mode |
| Page-Mode Cycle (tPC) | 50 ns max - enables faster sequential reads/writes within same row |
| Refresh Interval | 16 ms (1024 cycles) - determines required refresh controller frequency and overhead |
| Supply Voltage | 4.5 V to 5.5 V - compatible with standard 5-V TTL logic rails and decoupling networks |
| Operating Temperature | 0°C to 70°C - validated for commercial-grade desktop and industrial control environments |
| I/O Interface | TTL-compatible inputs/outputs with 2.4 V VIH min and 0.4 V VOL max - ensures interoperability with 74LS/ALS logic families |
Pinout & Package
30-pin leadless single in-line memory module (SIMM), AD single-sided construction with nickel/solder-plated contacts for socket insertion. Substrate includes multilayer ceramic bypass capacitors.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VCC | Power Supply | 5-V main supply input (pins 1, 11, 21, 29); requires local decoupling per TI layout guidelines |
| VSS | Ground | Signal and power ground (pins 9, 22, 30); multiple connections reduce ground bounce |
| A0–A10 | Address Inputs | 11-bit row/column address bus shared across all nine DRAMs; no internal latching |
| RAS | Row-Address Strobe | Active-low signal initiating row access and enabling internal row buffers for all chips |
| CAS | Column-Address Strobe (Common) | Active-low strobe for DQ1–DQ8; controls column selection and output enable on eight data lines |
| CAS9 | Column-Address Strobe (Parity) | Independent active-low strobe for D9/Q9; enables parity bit access without affecting main data bus |
| W | Write Enable | Active-low control determining read (W high) or write (W low) cycle; used with early-write protocol |
| DQ1–DQ8 | Data I/O (Common) | Bidirectional 8-bit data bus with 3-state outputs; driven only when CAS is low and RAS is active |
| D9 / Q9 | Data In / Data Out (Parity) | Separate 1-bit parity path; D9 accepts parity during writes, Q9 outputs parity during reads |
| NC | No Internal Connection | Pin 23 unconnected internally; must remain floating or tied to VSS per board layout rules |
Key Features
| Feature | Design Value |
|---|---|
| Separate CAS9 for parity channel | Enables independent parity generation and checking without timing interference to main DQ1–DQ8 bus |
| Early-write cycle support | Prevents output contention during write operations by controlling W/CAS timing per TI specification |
| Long 16-ms refresh period | Reduces refresh controller overhead and simplifies system-level timing budget allocation |
| 30-pin SIMM socket compatibility | Designed for industry-standard 30-pin edge connectors with defined contact plating and warpage limits |
| Low standby current (9 mA CMOS) | Minimizes power draw in idle states, critical for battery-backed or thermally constrained systems |
Applications
| Desktop PC Memory Expansion | Industrial Control HMI Buffers |
|---|---|
|
Use Scenario: Adding main memory to ISA-bus-based 486-class PCs requiring 30-pin SIMM compatibility. IC Role / Device Role / Timing Role: Primary DRAM module providing 4.5 MB of addressable memory space with parity protection. Use Value: Enables error detection via D9/Q9 parity channel and meets strict tRAC ≤ 80 ns requirement for 25 MHz CPU bus timing. |
Use Scenario: Buffering real-time sensor data streams in programmable logic controllers (PLCs) with limited PCB space. IC Role / Device Role / Timing Role: Off-chip memory buffer supporting burst transfers between microcontroller and analog I/O peripherals. Use Value: Page-mode timing (tPC = 50 ns) accelerates sequential register reads, reducing firmware latency in deterministic control loops. |
| Legacy Networking Equipment | Medical Diagnostic Instrumentation |
|
Use Scenario: Frame buffering in early Ethernet bridges and token-ring repeaters using socketed memory architectures. IC Role / Device Role / Timing Role: High-reliability data storage element operating under sustained thermal load in fanless enclosures. Use Value: Validated 0°C to 70°C operation and low ICC2 standby current (9 mA) ensure stable performance across ambient temperature swings. |
Use Scenario: Storing calibration tables and waveform capture buffers in portable ultrasound imaging devices. IC Role / Device Role / Timing Role: Non-volatile-configurable memory resource supporting fast boot-time initialization and runtime parameter updates. Use Value: CAS9-controlled parity provides fault-detection capability essential for FDA-compliant data integrity requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dynamic RAM module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TM4100EAD9-70 | 70 ns tRAC, 130 ns tRC, 18 ns tCAC - faster random access but higher power consumption (ICC1 = 810 mA) | Preferred where system clock margin is tight and refresh overhead must be minimized | Select TM4100EAD9-70 only if design requires sub-80 ns RAS access and can accommodate increased thermal load. |
| TM4100EAD9-60 | 60 ns tRAC, 110 ns tRC, 15 ns tCAC - highest speed grade with greatest timing margin for marginal layouts | Suitable for overclocked or noise-sensitive designs needing maximum setup/hold slack | Choose TM4100EAD9-60 only when board-level signal integrity analysis confirms tRAC < 70 ns is required. |
Compared with TM4100EAD9-80, the -70 and -60 variants offer progressively tighter access and cycle timing at the cost of higher ICC1 current and reduced noise immunity margins - the -80 grade balances timing compliance, thermal management, and legacy system compatibility.
Availability
TM4100EAD9-80 is available at Aetrix Electronics and suitable for desktop PC upgrades, industrial HMIs, legacy networking equipment, and medical diagnostic instrumentation requiring stable component supply and long-lifecycle support.
Supply support for TM4100EAD9-80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader founded in 1930, specializing in analog, embedded processing, and memory solutions for industrial, automotive, and computing markets.
The TM4100EAD9 series belongs to TI's legacy DRAM module product line, engineered specifically for socketed 30-pin SIMM applications in commercial and industrial systems requiring parity-enabled, TTL-compatible memory expansion.
FAQ
What is the memory organization and parity configuration of the TM4100EAD9-80?
The TM4100EAD9-80 is organized as 4,194,304 × 9 bits, with eight data bits (DQ1–DQ8) and one dedicated parity bit (D9/Q9). The ninth bit is controlled exclusively by CAS9, enabling independent parity generation and verification without interfering with main data transfers. This configuration satisfies ECC-capable system requirements where byte-level parity is mandated.
Does the TM4100EAD9-80 require external refresh circuitry?
Yes, the TM4100EAD9-80 requires external refresh control. It supports both RAS-only and CBR (CAS-before-RAS) refresh modes, with a guaranteed 16 ms refresh interval (1024 cycles). System designers must implement a refresh timer or use a memory controller that asserts RAS every 15.625 µs per row to meet this specification. No internal refresh counter is present.
What are the key timing differences between TM4100EAD9-80 and faster speed grades?
The TM4100EAD9-80 specifies 80 ns tRAC, 40 ns tAA, 20 ns tCAC, and 150 ns tRC - slower than the -70 and -60 variants but offering lower ICC1 current (720 mA) and relaxed layout constraints. These values directly impact CPU wait-state insertion, bus turnaround timing, and power delivery design, making the -80 grade optimal for thermally constrained or cost-sensitive implementations.
Can TM4100EAD9-80 be used in place of TM4100EAD9-70 or TM4100EAD9-60?
TM4100EAD9-80 is backward-compatible with systems designed for -70 or -60 speed grades, provided timing margins allow for its longer access and cycle times. However, it is not a drop-in replacement in timing-critical designs - tRAC increases from 70 ns to 80 ns and tRC from 130 ns to 150 ns, potentially requiring additional wait states or clock throttling.
What package type and mechanical interface does the TM4100EAD9-80 use?
The TM4100EAD9-80 is a 30-pin single in-line memory module (SIMM) with leadless AD single-sided construction. It mounts nine TMS44100DJ SOJ-packaged DRAMs on a PC substrate with nickel/solder-plated contacts optimized for standard 30-pin edge sockets. Warpage is limited to 0.005 inch/inch, and substrate thickness is 1.27 mm (0.05 inch).
TM4100EAD9-80 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Controller Type:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
TM4100EAD9-80 FAQ
1.How can I place an order for TM4100EAD9-80 through Aetrix?
Please submit a Request for Quotation (RFQ) for TM4100EAD9-80 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TM4100EAD9-80 reliable?
The price and inventory of TM4100EAD9-80 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TM4100EAD9-80 is usually 5 days.
3.What payment methods are accepted for TM4100EAD9-80?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TM4100EAD9-80 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TM4100EAD9-80?
TM4100EAD9-80 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TM4100EAD9-80 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TM4100EAD9-80?
For technical support, including TM4100EAD9-80 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TM4100EAD9-80 requirements.
6.How does Aetrix verify that TM4100EAD9-80 is sourced from the original manufacturer or authorized distributors?
All TM4100EAD9-80 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TM4100EAD9-80 meets industry standards.
7.What is the process for return or replacement of TM4100EAD9-80?
All TM4100EAD9-80 units undergo pre-shipment inspection (PSI). If there is an issue with TM4100EAD9-80, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TM4100EAD9-80 part is unused and in its original packaging.
Return procedure for TM4100EAD9-80:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TM4100EAD9-80 Tags
-
BQ2201SN-N
Texas Instruments
-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated
-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated
-
4RCD0232KC1ATG
Renesas Electronics Corporation
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated
-
DS1321S+
Analog Devices Inc./Maxim Integrated
-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated
-
DS1321E+
Analog Devices Inc./Maxim Integrated
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