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Texas Instruments TM4100GAD8-80
- Part No.:
- TM4100GAD8-80
- Manufacturer:
- Texas Instruments
- Category:
- Controllers
- Package:
- -
- Datasheet:
-
TM4100GAD8-80.pdf
- Description:
- DRAM MODULE, 4MX8, 80NS
- Quantity:
- Payment:
- Shipping:
Inventory:3,814
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Product details
Overview
TM4100GAD8-80 from Texas Instruments is a 4,194,304 × 8-bit (32 MB) DRAM module in a 30-pin SIMM form factor, operating from a single 5-V ±10% supply, featuring 80 ns tRAC access time, 16 ms refresh interval, and TTL-compatible I/O for legacy memory subsystems in industrial control and embedded computing.
For engineers reviewing the TM4100GAD8-80 datasheet, TM4100GAD8-80 pinout, TM4100GAD8-80 application, or TM4100GAD8-80 equivalent, key selection criteria include CAS/RAS timing compliance, 30-pin socketable SIMM mechanical fit, 0°C to 70°C operating range, and compatibility with early-write cycle protocols to avoid DQ bus contention.
Technical Context
The TM4100GAD8-80 implements eight TMS44100DJ 4-Mbit × 1 DRAMs in SOJ packages on a single-sided substrate, sharing common CAS, RAS, W, and A0–A10 address lines while multiplexing DQ1–DQ8 for bidirectional 8-bit data transfer. Its functional block diagram confirms full common-I/O architecture with no internal data bus arbitration.
It supports both RAS-only and CAS-before-RAS (CBR) refresh modes, with tREF = 16 ms (1024 cycles), and requires early-write cycles due to shared DQ lines-no internal write buffering or pipeline staging is implemented. All inputs and outputs meet standard TTL voltage thresholds (VIH = 2.4 V, VIL = 0.8 V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 4,194,304 × 8 bits (32 Mbit total, 8-bit wide data bus) |
| tRAC (Max) | 80 ns - defines maximum delay from RAS assertion to valid data output |
| tRC (Max) | 150 ns - minimum random read/write cycle time; constrains system clock rate |
| Refresh Interval | 16 ms - requires 1024 refresh cycles per interval; impacts controller overhead |
| Supply Voltage | 4.5 V to 5.5 V - single 5-V rail with ±10% tolerance; no auxiliary supplies needed |
| Operating Temperature | 0°C to 70°C - commercial-grade range; not rated for extended industrial or automotive use |
| Input Capacitance (A0–A10) | 40 pF - limits trace length and fanout in address routing |
Pinout & Package
30-pin leadless single in-line memory module (SIMM), AD single-sided configuration with nickel/solder-plated contacts for socket insertion. Substrate includes multilayer ceramic bypass capacitors; warpage ≤ 0.005 inch/inch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 21, 30 | VCC | 5-V power supply input; three dedicated pins reduce IR drop and noise coupling |
| 3, 9, 16, 22, 26 | VSS | Ground reference; five pins ensure low-impedance return path for all signals |
| A0–A10 (pins 4–8, 10–15, 17–19) | Address Inputs | 11-bit row/column multiplexed address bus; supports 2048 rows × 2048 columns |
| CAS (pin 2) | Column-Address Strobe | Activates column decode and data I/O; controls tCAC (20 ns max) and tOFF (20 ns max) |
| RAS (pin 29) | Row-Address Strobe | Initiates row activation and refresh; governs tRAC (80 ns max) and tRAS (80 ns min) |
| W (pin 23) | Write Enable | Active-low signal enabling write cycles; timing referenced to CAS/RAS edges (tWCH = 15 ns) |
| DQ1–DQ8 (pins 3, 6, 9, 12, 15, 18, 24, 27) | Data In/Data Out | Shared bidirectional 8-bit data bus; requires external bus control to prevent contention |
| NC (pins 25, 28) | No Internal Connection | Unbonded pads; must remain unconnected per design-no pull-up/down or routing |
Key Features
| Feature | Design Value |
|---|---|
| Common CAS Control | Single CAS line drives all eight DRAMs simultaneously, simplifying controller logic but requiring strict timing coordination across DQ lines |
| Long Refresh Period | 16 ms interval reduces refresh overhead versus shorter-interval DRAMs, easing real-time system scheduling |
| TTL-Compatible I/O | Direct interface with legacy 5-V microprocessor buses without level-shifting circuitry |
| 3-State Output | Output drivers disable when CAS is high, preventing bus contention during idle or refresh cycles |
| Low Power Standby | ICC2 = 8 mA (CMOS-level inputs) or 16 mA (TTL-level inputs) in RAS/CAS-high standby state |
Applications
| Industrial PLC Memory Expansion | Legacy PC/XT Main Memory |
|---|---|
Use Scenario: Adding 32 MB of main memory to programmable logic controllers using Intel 80186/80286-based architectures with 30-pin SIMM sockets. IC Role / Device Role / Timing Role: Primary volatile program/data storage module; provides 8-bit data path synchronized to RAS/CAS strobes at ≤6.67 MHz (150 ns cycle). Use Value: Enables deterministic scan-cycle execution by meeting tRAC ≤ 80 ns and tRC ≤ 150 ns under 0°C–70°C ambient conditions. |
Use Scenario: Upgrading memory in IBM PC/XT-compatible systems where motherboard supports 30-pin SIMM slots and 5-V DRAM timing. IC Role / Device Role / Timing Role: Drop-in replacement for earlier 256K×8 or 1M×8 SIMMs; uses identical pinout and early-write protocol to avoid bus conflicts. Use Value: Delivers 32 MB capacity within same physical footprint and electrical interface, eliminating PCB redesign. |
| Embedded Test Equipment Buffer | Medical Imaging Frame Store |
Use Scenario: Capturing and buffering real-time analog-to-digital conversion streams in benchtop test instruments with limited board space. IC Role / Device Role / Timing Role: High-density frame buffer supporting burst page-mode reads (tPC = 50 ns) for rapid waveform display updates. Use Value: Sustains 20 MB/s effective bandwidth in page mode, sufficient for 10-bit 2 MS/s acquisition with on-the-fly processing. |
Use Scenario: Storing uncompressed grayscale image frames (1024×1024×8-bit) in portable ultrasound devices requiring field-replaceable memory modules. IC Role / Device Role / Timing Role: Socketable, field-serviceable memory unit delivering 32 MB in one module; supports CBR refresh to minimize CPU intervention. Use Value: Reduces thermal load via ICC2 = 8 mA standby current and eliminates need for external refresh controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DRAM module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TM4100GAD8-70 | 70 ns tRAC, 130 ns tRC, 18 ns tCAC - faster timing but higher power (ICC1 = 720 mA vs. 640 mA) | Requires tighter controller timing margins; suitable only if system clock allows sub-130 ns cycles | Select TM4100GAD8-70 only when existing design already meets its stricter setup/hold windows. |
| MT48LC16M8A2P-75 | Synchronous SDRAM (16M×8, 3.3 V), 75 MHz clock, 100-pin TSOP - not pin-compatible; requires new controller logic | Enables pipelined burst reads and auto-refresh; incompatible with asynchronous RAS/CAS protocols | Choose MT48LC16M8A2P-75 for new designs needing higher bandwidth; TM4100GAD8-80 remains optimal for legacy socket reuse. |
Compared with TM4100GAD8-70 and MT48LC16M8A2P-75, the TM4100GAD8-80 offers the lowest timing margin risk in aging systems, maintains full mechanical and electrical compatibility with 30-pin SIMM sockets, and avoids synchronous controller redesign-making it the most reliable choice for maintenance and repair of installed base equipment.
Availability
TM4100GAD8-80 is available at Aetrix Electronics and suitable for industrial PLC memory expansion, legacy PC/XT upgrades, embedded test equipment buffering, and medical imaging frame store applications requiring stable component supply and long-term obsolescence management.
Supply support for TM4100GAD8-80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a U.S.-based semiconductor company founded in 1930, specializing in analog, embedded processing, and memory solutions for industrial, automotive, and communications markets.
The TM4100GAD8-80 belongs to TI's legacy DRAM module product line designed specifically for socket-based memory upgrades in 1990s-era computing and control systems, emphasizing mechanical interoperability and TTL-level timing compliance.
FAQ
What is the memory organization and total capacity of the TM4100GAD8-80?
The TM4100GAD8-80 is organized as 4,194,304 × 8 bits, delivering 33,554,432 bits (32 Mbit) of dynamic RAM in an 8-bit-wide data bus configuration. It uses eight TMS44100DJ 4-Mbit × 1 DRAMs arranged in parallel on a single-sided SIMM substrate, with all address and control lines shared across the array.
Does the TM4100GAD8-80 require external refresh circuitry?
Yes, the TM4100GAD8-80 requires external refresh control. It supports both RAS-only and CAS-before-RAS (CBR) refresh modes with a fixed 16 ms refresh interval (1024 cycles), but contains no internal refresh counter or timer. The host controller must generate precise RAS or CAS strobes at the required frequency.
What is the significance of "early-write cycles" for the TM4100GAD8-80?
Early-write cycles are mandatory for the TM4100GAD8-80 because it uses a common I/O architecture (DQ1–DQ8 shared for input and output). To prevent bus contention, write data must be driven onto the DQ lines before CAS goes low-ensuring the DRAM latches input data prior to enabling output drivers. This timing constraint is defined in the functional block diagram and timing tables.
Can the TM4100GAD8-80 operate outside the 0°C to 70°C temperature range?
No. The TM4100GAD8-80 is characterized and guaranteed only for operation from 0°C to 70°C. Absolute maximum ratings allow storage down to –55°C and up to 125°C, but functional operation outside the specified free-air temperature range is not assured, and parameters like tRAC, tRC, and refresh behavior may degrade unpredictably.
Is the TM4100GAD8-80 pin-compatible with other 30-pin SIMMs such as the TM4100GAD8-70 or -60?
Yes, the TM4100GAD8-80 shares identical pinout, package dimensions, and mechanical interface with TM4100GAD8-70 and TM4100GAD8-60. All variants use the same 30-pin AD single-sided SIMM layout, VCC/VSS pin assignments, and DQ/CAS/RAS/A0–A10 signal mapping-enabling direct substitution in socketed systems, provided timing margins accommodate the slower speed grade.
TM4100GAD8-80 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Controller Type:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
TM4100GAD8-80 FAQ
1.How can I place an order for TM4100GAD8-80 through Aetrix?
Please submit a Request for Quotation (RFQ) for TM4100GAD8-80 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TM4100GAD8-80 reliable?
The price and inventory of TM4100GAD8-80 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TM4100GAD8-80 is usually 5 days.
3.What payment methods are accepted for TM4100GAD8-80?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TM4100GAD8-80 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TM4100GAD8-80?
TM4100GAD8-80 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TM4100GAD8-80 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TM4100GAD8-80?
For technical support, including TM4100GAD8-80 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TM4100GAD8-80 requirements.
6.How does Aetrix verify that TM4100GAD8-80 is sourced from the original manufacturer or authorized distributors?
All TM4100GAD8-80 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TM4100GAD8-80 meets industry standards.
7.What is the process for return or replacement of TM4100GAD8-80?
All TM4100GAD8-80 units undergo pre-shipment inspection (PSI). If there is an issue with TM4100GAD8-80, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TM4100GAD8-80 part is unused and in its original packaging.
Return procedure for TM4100GAD8-80:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TM4100GAD8-80 Tags
-
BQ2201SN-N
Texas Instruments
-
DS1314S+
Analog Devices Inc./Maxim Integrated
-
BQ2205LYPW
Texas Instruments
-
MXD1210CSA+
Analog Devices Inc./Maxim Integrated
-
MXD1210CPA+
Analog Devices Inc./Maxim Integrated
-
4RCD0232KC1ATG
Renesas
-
DS1312S-2+
Analog Devices Inc./Maxim Integrated
-
DS1314S-2+T&R
Analog Devices Inc./Maxim Integrated
-
DS1321S+
Analog Devices Inc./Maxim Integrated
-
DS1312S+
Analog Devices Inc./Maxim Integrated
-
MXD1210ESA+
Analog Devices Inc./Maxim Integrated
-
DS1321E+
Analog Devices Inc./Maxim Integrated
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