Toshiba Semiconductor and Storage TMBT3906,LM

Overview

TMBT3906,LM from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial transistor designed for audio-frequency general-purpose amplification and switching. It delivers V_CEO = −50 V, I_C = −200 mA (max), h_FE = 100–300 at I_C = −10 mA, and f_T = 80 MHz, operating in common-emitter configuration for low-noise signal conditioning in portable audio stages.

For engineers reviewing the TMBT3906,LM datasheet, TMBT3906,LM pinout, TMBT3906,LM application, or TMBT3906,LM equivalent, key selection criteria include guaranteed h_FE range at multiple I_C points, V_CE(sat) ≤ −0.40 V at I_C = −50 mA/I_B = −5 mA, SOT-23 package thermal performance (P_C = 320 mW on FR4), and complementary pairing with TMBT3904 for push-pull designs.

Technical Context

The TMBT3906,LM operates as a discrete PNP bipolar junction transistor in grounded-emitter or grounded-collector configurations. Its DC current gain h_FE varies from 60 (I_C = −0.1 mA) to 300 (I_C = −10 mA), with degradation to 30 at I_C = −100 mA - indicating optimized linearity in mid-current biasing. Noise figure is specified at 10 dB (V_CE = −6 V, I_C = −0.1 mA, f = 1 kHz, R_G = 10 kΩ).

Switching behavior is characterized by t_d/t_r = 55 ns, t_s = 1000 ns, and t_f = 65 ns under I_C = −10 mA, I_B1 = I_B2 = −1 mA, revealing storage-time-limited turn-off suitable for <100 kHz switching but not RF power control. Cob = 4–7 pF at V_CB = −10 V confirms suitability for audio-band amplification with minimal Miller effect.

Key Specifications

Pinout & Package

Package: SOT-23 (JEDEC TO-236AB), 3-pin surface-mount plastic package, 9.0 mg typical weight, footprint compatible with automated placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose transistor applications.

Compared with MMBT3906 and PN2907A, the TMBT3906,LM offers superior h_FE consistency at I_C = −10 mA (100–300 vs. 100 min only), tighter V_CE(sat) specification (−0.25 V typ.), and documented noise performance - making it preferred for low-noise, mid-current analog signal paths.

Availability

TMBT3906,LM is available at Aetrix Electronics and suitable for audio pre-amplifier stages, level translation interfaces, and push-pull output drivers requiring stable component supply, consistent h_FE binning, and SOT-23 thermal reliability.

Supply support for TMBT3906,LM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on efficiency, reliability, and automotive-grade quality.

The TMBT3906,LM belongs to Toshiba's general-purpose bipolar transistor product line, engineered for cost-sensitive, high-volume consumer audio, industrial interface, and portable electronics applications requiring proven PNP performance in ultra-small packages.

FAQ

What is the maximum continuous collector current rating for the TMBT3906,LM?

The TMBT3906,LM has an absolute maximum collector current rating of −200 mA at T_a = 25°C. Derating is required above 25°C ambient: power dissipation drops linearly to zero at 150°C junction temperature. For sustained operation at −100 mA, ensure PCB copper area meets Note 1 (3 × 0.42 mm² pads) to maintain P_C = 320 mW.

Does the TMBT3906,LM have a guaranteed h_FE range at I_C = −10 mA?

Yes, the TMBT3906,LM guarantees h_FE between 100 and 300 when tested at V_CE = −1 V and I_C = −10 mA. This range is production-tested and documented in Toshiba's Electrical Characteristics table, enabling predictable bias design without external gain-setting resistors in many audio amplifier configurations.

Is the TMBT3906,LM pin-compatible with the MMBT3906?

Yes, the TMBT3906,LM is pin-compatible with the MMBT3906: both use SOT-23 package with identical pin 1 (Base), pin 2 (Emitter), pin 3 (Collector) assignment and mechanical dimensions. No PCB layout changes are needed when substituting between these parts in existing designs.

What is the noise figure specification for the TMBT3906,LM and under what conditions is it measured?

The TMBT3906,LM has a noise figure of 10 dB, measured at V_CE = −6 V, I_C = −0.1 mA, f = 1 kHz, and R_G = 10 kΩ. This value reflects its suitability for low-noise pre-amplification tasks such as electret microphone biasing, where minimizing added noise in the audio band is critical to signal integrity.

Can the TMBT3906,LM be used in switching applications, and what are its key timing parameters?

Yes, the TMBT3906,LM is qualified for switching use with documented delay time (t_d) and rise time (t_r) of 55 ns each, storage time (t_s) of 1000 ns, and fall time (t_f) of 65 ns under I_C = −10 mA and I_B = −1 mA. Its relatively long t_s limits efficient operation above 100 kHz but supports clean digital logic translation up to 3 MHz.