STMicroelectronics TN3050H-12GY-TR

Overview

TN3050H-12GY-TR from STMicroelectronics is an AEC-Q101 qualified automotive-grade SCR thyristor in D²PAK package, rated for 30 ARMS on-state current, 1200 V repetitive off-state voltage (VDRM/VRRM), and 1400 V non-repetitive peak blocking voltage (VDSM/VRSM). It delivers high noise immunity (1000 V/µs dV/dt), operates up to 150 °C junction temperature, and supports AC solid-state relay, battery charger inrush limiting, and 3-phase soft-start control.

For engineers reviewing the TN3050H-12GY-TR datasheet, TN3050H-12GY-TR pinout, TN3050H-12GY-TR application, or TN3050H-12GY-TR equivalent, key selection criteria include RMS current derating vs. case temperature, gate trigger current (IGT ≤ 50 mA), thermal resistance (Rth(j-c) = 0.8 °C/W), and surge robustness (ITSM = 300 A @ 10 ms).

Technical Context

This SCR operates as a unidirectional, gate-controlled power switch with latching behavior after turn-on. Its critical conduction parameters-IT(AV) = 19 A, VTM ≤ 1.65 V at 60 A, and RD ≤ 14 mΩ-define conduction loss and thermal design margins in AC switching applications.

The device features high static dV/dt immunity (≥1000 V/µs at Tj = 150 °C), low gate threshold (VGT ≤ 1.3 V), and tight holding current (IH ≤ 100 mA), enabling reliable triggering and zero-crossing–compatible control in noisy automotive and industrial environments.

Key Specifications

Pinout & Package

Supplied in D²PAK (TO-263) surface-mount package with exposed tab for thermal conduction. Pin configuration: Pin 1 = Anode, Pin 2 = Cathode, Pin 3 = Gate. The tab is electrically connected to the Anode and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SCR switching applications.

Compared with BT139-800R and STTH30L06D, the TN3050H-12GY-TR uniquely combines 1200 V blocking, AEC-Q101 qualification, and 30 ARMS rating in D²PAK-enabling compact, high-reliability AC switching where voltage margin, automotive compliance, and thermal density are critical.

Availability

TN3050H-12GY-TR is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial UPS bypass circuits, and 3-phase motor soft-start controllers requiring stable component supply across multi-year production cycles.

Supply support for TN3050H-12GY-TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The TN3050H-12GY-TR belongs to ST's high-voltage automotive SCR portfolio, engineered specifically for robust, high-temperature AC power control in electrified vehicle subsystems and industrial energy conversion systems.

FAQ

What is the maximum allowable gate trigger pulse width for reliable turn-on?

The datasheet specifies IGT testing at tp = 20 µs for VGM, but sustained gate pulses beyond 100 µs risk exceeding PG(AV) = 1 W average gate power dissipation. For robust triggering, use 20–50 µs pulses with peak current ≥2×IGT (i.e., ≥20 mA) and ensure gate resistor limits peak current to ≤8 A per IGM rating.

Can TN3050H-12GY-TR be used in DC switching applications?

No-it is a half-wave SCR and cannot commutate in pure DC. It requires natural current zero-crossing or external forced commutation. For DC switching, consider a high-voltage IGBT or MOSFET with integrated freewheeling path; this device is strictly intended for AC line-frequency or phase-controlled rectifier topologies.

Is the D²PAK tab electrically isolated from the PCB ground plane?

No-the tab is internally connected to the Anode (Pin 1) and must be electrically insulated from any other potential using thermally conductive dielectric pads or ceramic substrates. Direct mounting to grounded copper without isolation violates creepage/clearance requirements and risks short-circuit failure.

How does junction temperature affect gate trigger sensitivity?

IGT increases with rising Tj: at 150 °C, IGT is ~1.8× its 25 °C value (per Figure 10). Design gate drivers to deliver ≥50 mA at worst-case hot conditions, and avoid marginal triggering near the 10 mA minimum spec-use ≥2× IGT margin for reliability across temperature and process variation.