Texas Instruments TPL5110QDDCTQ1

Overview

TPL5110QDDCTQ1 from Texas Instruments is an AEC-Q100 Grade 1 automotive nano-power system timer with integrated MOSFET driver for power gating, featuring 35 nA typical supply current at 2.5 V, 1.8–5.5 V supply range, 100 ms to 7200 s resistor-selectable timing, ±0.6% typical time interval accuracy, and one-shot mode-used in battery-powered EV subsystems like smart key and remote current sensor circuits.

For engineers reviewing the TPL5110QDDCTQ1 datasheet, TPL5110QDDCTQ1 pinout, TPL5110QDDCTQ1 application, or TPL5110QDDCTQ1 equivalent, this page delivers verified functional safety-capable timing parameters, SOT-23-6 MOS-driver interface behavior, automotive-grade thermal and ESD specs (HBM ±2 kV, CDM ±750 V), and real-world power-gating use cases requiring ultra-low quiescent current and precise duty-cycled wake-up control.

Technical Context

The TPL5110QDDCTQ1 implements a low-frequency oscillator with programmable divider and digital logic control to generate periodic or single-cycle DRV output pulses based on external R_EXT value and EN/ONE_SHOT pin state. Its internal resistance-to-time conversion uses a 1650-point discrete lookup table with quadratic coefficient sets per time range.

DRV operates as an active-low gate driver (V_OL = 0.3 V @ –1 mA) enabling external N-channel MOSFETs; DONE input accepts µC-generated logic-high pulses ≥100 ns to terminate DRV early; DELAY/M_DRV serves dual analog (R_EXT measurement) and digital (manual power-on trigger) roles with 20 ms minimum assertion and debounce filtering.

Key Specifications

Pinout & Package

SOT-23-6 package (3.00 mm × 3.00 mm body size), thermally optimized for PCB-mounted automotive modules with R_θJA = 163°C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nano-power timer applications.

Compared with TPL5010QDDCTQ1, the TPL5110QDDCTQ1 adds integrated MOSFET drive and one-shot mode-eliminating BOM cost and layout area for external drivers. Compared with TPS3808G18QDBVRQ1, it delivers true programmable timing and power control rather than static reset generation, making it uniquely suited for ultra-low-power duty-cycled architectures.

Availability

TPL5110QDDCTQ1 is available at Aetrix Electronics and suitable for electric vehicle subsystems, battery-powered wireless sensors, and automotive body electronics requiring stable component supply with AEC-Q100 compliance and long-term lifecycle assurance.

Supply support for TPL5110QDDCTQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with deep automotive design expertise and rigorous quality systems.

The TPL5x10Q family-including TPL5110QDDCTQ1-is engineered specifically for automotive power-gating applications where nanoscale quiescent current, AEC-Q100 qualification, and functional safety documentation are mandatory.

FAQ

What is the maximum external resistance value supported by the TPL5110QDDCTQ1 for timing configuration?

The TPL5110QDDCTQ1 supports external resistance values from 500 Ω to 170 kΩ on the DELAY/M_DRV pin. At 170 kΩ, the device achieves its maximum time interval of 7200 s (2 hours). Resistance values beyond 170 kΩ are not guaranteed to produce valid timing and may result in undefined or extended intervals due to quantization limits in the internal ADC-based time calculation engine. Always verify R_EXT selection using TI's official lookup tables or Equation 1 from the datasheet.

How does the DONE signal affect the DRV output pulse width in the TPL5110QDDCTQ1?

In the TPL5110QDDCTQ1, the DONE signal shortens the DRV pulse width when asserted by the microcontroller within the programmed time interval minus 50 ms. If DONE is received, DRV transitions high immediately, turning off the driven MOSFET. If no DONE is received, DRV remains low for the full t_IP–50 ms, then goes high for the final 50 ms to ensure clean MOSFET turn-off before the next cycle. This behavior is consistent in both timer and one-shot modes.

Can the TPL5110QDDCTQ1 operate reliably at 1.8 V supply voltage across its full temperature range?

Yes, the TPL5110QDDCTQ1 is fully specified for operation from 1.8 V to 5.5 V across the full AEC-Q100 Grade 1 temperature range of –40°C to +125°C. Electrical characteristics including 35 nA typical supply current, ±0.6% time accuracy, and proper logic thresholds (VIH = 0.7×VDD, VIL = 0.3×VDD) are validated at 1.8 V and extreme temperatures. No derating or external compensation is required for 1.8 V use in automotive environments.

What is the purpose of the EN/ONE_SHOT pin on the TPL5110QDDCTQ1, and how must it be configured?

The EN/ONE_SHOT pin on the TPL5110QDDCTQ1 selects between two mutually exclusive operating modes: HIGH configures periodic timer mode (repeating DRV pulses), and LOW configures one-shot mode (single DRV pulse at power-on). It must be hard-wired to either VDD or GND-floating or dynamically controlled states are undefined and may cause erratic behavior. TI recommends soldering a 0 Ω resistor or direct trace connection to ensure deterministic startup.

Does the TPL5110QDDCTQ1 require external passive components beyond R_EXT for basic operation?

For basic operation, the TPL5110QDDCTQ1 requires only the external R_EXT resistor on DELAY/M_DRV and appropriate decoupling capacitance (≥100 nF ceramic) between VDD and GND. No additional timing capacitors, crystals, or pull-up/down resistors are needed. The DONE and EN/ONE_SHOT pins may be left unconnected only if tied internally via board-level routing; floating inputs are not permitted per datasheet recommendations.