Texas Instruments TPS2013DR

Overview

TPS2013DR from Texas Instruments is a high-side N-channel MOSFET power-distribution switch in SOIC-8 package, delivering 2.6 A typical short-circuit current limit at 25°C, 95 mΩ max on-state resistance at 5.5 V input, and logic-compatible enable control. It provides integrated thermal shutdown (≈180°C), electrostatic discharge protection (12 kV on OUT), and controlled 3.5–4 ms rise/fall times for EMI reduction - deployed in USB peripheral power management and industrial I/O modules.

For engineers reviewing the TPS2013DR datasheet, TPS2013DR pinout, TPS2013DR application, or TPS2013DR equivalent, key selection criteria include its 2.7–5.5 V operating range, 10 µA standby current, SOIC-8 drop-in compatibility with Siliconix Littlefoot™ PMOS switches (with GND connected), and precise 1.65–4.5 A short-circuit threshold tolerance across temperature.

Technical Context

The TPS2013DR implements a charge-pump–driven gate driver that sustains full MOSFET enhancement down to 2.7 V input, eliminating external bias components. Its internal sense FET enables accurate current limiting without series resistive loss, switching into constant-current mode when load exceeds 2.6 A (typ) at 25°C.

Thermal protection operates with ≈20°C hysteresis: device cycles off/on autonomously above ≈180°C junction temperature. Enable logic is TTL/CMOS compatible (low = ON), and output leakage remains ≤10 µA over –40°C to 125°C junction range.

Key Specifications

Pinout & Package

TPS2013DR is housed in an 8-pin SOIC (D) package with exposed pad not present; footprint matches industry-standard SOIC-8 (5.3 mm × 6.2 mm), RoHS-compliant NiPdAu lead finish, MSL Level-1, and tape-and-reel packaging (2500 pcs/reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side power switch applications.

Compared with TPS2013D, the TPS2013DR offers optimized logistics for volume manufacturing via 2500-piece tape-and-reel; versus TPS2051BDBVR, it delivers 73% higher current capacity and 27% lower conduction loss but requires SOIC-8 layout space and lacks reverse-voltage protection.

Availability

TPS2013DR is available at Aetrix Electronics and suitable for USB power management, industrial I/O protection, and medical auxiliary rail applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for TPS2013DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of heritage in high-reliability industrial and automotive ICs.

The TPS201x family was designed specifically for robust power distribution in systems subject to heavy capacitive loads and frequent short-circuit faults - targeting USB, docking stations, PLCs, and test equipment.

FAQ

What is the maximum continuous output current rating for the TPS2013DR?

The TPS2013DR is rated for 1.5 A continuous output current per the recommended operating conditions table. Its short-circuit current limit is 2.6 A (typical at 25°C), but sustained operation above 1.5 A risks thermal shutdown due to power dissipation exceeding SOIC-8 package limits. Designers must verify junction temperature using R_θJA = 172°C/W and actual load conditions.

Does the TPS2013DR require external components for basic operation?

No, the TPS2013DR requires no external components for core functionality: its internal 100 kHz charge pump enables full gate drive from 2.7 V input, and current sensing is implemented via integrated sense FET. However, TI recommends a 0.1 µF ceramic bypass capacitor between IN and GND, plus optional 0.1 µF output decoupling, to ensure stability and ESD immunity.

How does the enable logic polarity work on the TPS2013DR?

The TPS2013DR uses active-low enable: a logic LOW (≤0.4 V at 2.7 V ≤ V_IN < 4.5 V) turns the power switch ON, while a logic HIGH (≥2 V) disables the switch and reduces supply current to ≤10 µA. This polarity aligns with common microcontroller open-drain or active-low reset outputs, simplifying direct GPIO interfacing without level-shifting.

Can the TPS2013DR replace Siliconix Littlefoot™ PMOS switches without PCB changes?

Yes - the TPS2013DR in SOIC-8 package is explicitly documented as a drop-in replacement for Siliconix Littlefoot™ PMOS power switches, provided Pin 1 (GND) is connected. Unlike the PMOS predecessors, the TPS2013DR uses an N-channel MOSFET with charge pump, delivering lower R_DS(on) and superior current-limit accuracy without altering footprint or pin assignments.

What happens during thermal shutdown on the TPS2013DR?

When the TPS2013DR junction temperature reaches ≈180°C, the thermal protection circuit disables the power switch. After cooling by ≈20°C (to ~160°C), the device automatically recovers and re-enables. This cycling continues until the fault (e.g., sustained short or overload) is removed - protecting both the TPS2013DR and downstream circuitry without requiring external intervention.