Texas Instruments TPS2013DRG4

Overview

TPS2013DRG4 from Texas Instruments is a high-side N-channel MOSFET power-distribution switch in SOIC-8 package, delivering 2.6 A typical short-circuit current limit at 25°C, 95 mΩ max on-state resistance at 5.5 V input, and controlled 3.5–4 ms rise/fall times to suppress EMI. It operates from 2.7 V to 5.5 V and integrates thermal shutdown (≈180°C) and electrostatic discharge protection (12 kV on OUT, 6 kV elsewhere), used for USB port power control and hot-swap subsystems.

For engineers reviewing the TPS2013DRG4 datasheet, TPS2013DRG4 pinout, TPS2013DRG4 application, or TPS2013DRG4 equivalent, key selection criteria include its 2.6 A current-limit threshold, SOIC-8 drop-in compatibility with Siliconix Littlefoot™ PMOS switches (with GND connected), logic-compatible enable input, and junction temperature range of –40°C to 125°C.

Technical Context

The TPS2013DRG4 implements a charge-pump–driven gate driver that sustains MOSFET turn-on down to 2.7 V input, operating at 100 kHz without external components. Its current-limit circuit uses a sense FET-not a shunt resistor-to enter constant-current mode during overloads, minimizing voltage drop and power loss in the current path.

Thermal protection employs hysteresis: the device shuts off at ≈180°C junction temperature and auto-recovers after cooling ~20°C. The enable input accepts TTL/CMOS logic levels, drawing ≤0.5 µA when high or low, and reduces supply current to ≤10 µA in disabled state.

Key Specifications

Pinout & Package

TPS2013DRG4 is housed in an 8-pin SOIC (D) package with gull-wing leads, 1.27 mm pitch, and JEDEC MS-012AC outline. Pin 1 is marked by a beveled corner or dot; the device is surface-mount compatible and RoHS-compliant with NiPdAu lead finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side load switch applications.

Compared with TPS2013DR and TPS2051BDBVR, the TPS2013DRG4 provides identical performance to TPS2013DR but with TI's green-qualified finish, while offering significantly higher current capacity, lower R_ON, and robust thermal cycling behavior versus the SOT-23 alternative-making it optimal for industrial 5 V distribution where reliability and fault tolerance are critical.

Availability

TPS2013DRG4 is available at Aetrix Electronics and suitable for USB peripheral management, industrial hot-swap modules, embedded power sequencing, and FPGA I/O bank isolation requiring stable component supply and long-term industrial lifecycle support.

Supply support for TPS2013DRG4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power-switching solutions.

The TPS201x family was designed specifically for robust power distribution in systems exposed to heavy capacitive loads and frequent short-circuit events-targeting USB, docking stations, and industrial backplanes where fault containment and EMI control are essential.

FAQ

What is the maximum continuous output current rating for the TPS2013DRG4?

The TPS2013DRG4 does not specify a maximum continuous output current independent of thermal conditions; instead, it features a current-limit threshold of 2.6 A typical at 25°C. Continuous current capability depends on PCB layout, ambient temperature, and heatsinking. At 25°C ambient with adequate copper area, it can sustain ≥1.5 A continuously before thermal limiting activates. The TPS2013DRG4 datasheet defines recommended operating conditions up to 1.5 A continuous load.

Does the TPS2013DRG4 require external components for basic operation?

No, the TPS2013DRG4 requires no external components for core functionality: its internal 100 kHz charge pump eliminates the need for boost capacitors, and logic-level EN input interfaces directly to MCU GPIOs. However, TI recommends a 0.1 µF ceramic bypass capacitor between IN and GND, and a 0.1 µF capacitor on OUT, to ensure ESD immunity and transient stability-both are mandatory for robust operation per the TPS2013DRG4 application note.

How does the thermal protection mechanism work in the TPS2013DRG4?

The TPS2013DRG4 incorporates a junction-temperature sensor that disables the power switch when die temperature reaches ≈180°C. After shutdown, the device remains off until the junction cools by ~20°C (to ≈160°C), then automatically resumes operation. This hysteresis prevents rapid on-off cycling and allows gradual fault clearance. The TPS2013DRG4 continues this cycle until the overload or short is removed, protecting both itself and downstream circuitry without external supervision.

Is the TPS2013DRG4 pin-compatible with earlier versions like TPS2010D?

Yes, the TPS2013DRG4 shares identical SOIC-8 pinout and footprint with all TPS201x family members including TPS2010D, TPS2011D, and TPS2012D. All variants use the same D-package mechanical outline, terminal numbering, and electrical pin functions-only the current-limit threshold differs. This allows direct substitution in existing layouts when upgraded current capability is needed, provided the enable logic and thermal design accommodate the higher 2.6 A limit.

What is the significance of the "G4" suffix in TPS2013DRG4?

"G4" denotes Texas Instruments' green-qualified packaging standard: lead finish is NiPdAu (nickel-palladium-gold), fully RoHS-compliant with no lead, antimony, or brominated flame retardants. It also indicates compliance with TI's enhanced environmental requirements for halogen-free materials and stricter process controls. The TPS2013DRG4 maintains identical electrical performance and reliability as TPS2013DR but meets stricter sustainability and assembly standards for automotive and industrial end equipment.