Texas Instruments TPS2550DRVTG4

Overview

TPS2550DRVTG4 from Texas Instruments is a programmable high-side N-channel MOSFET power-distribution switch with adjustable current limiting (100 mA–1.1 A), 94 mΩ on-resistance in DRV package, reverse-input-output voltage protection, and fast 2 μs overcurrent response. It operates from 2.5 V to 6.5 V and integrates soft-start, thermal shutdown, and deglitched fault reporting - deployed in USB ports, laptops, and heavy capacitive load interfaces.

For engineers reviewing the TPS2550DRVTG4 datasheet, TPS2550DRVTG4 pinout, TPS2550DRVTG4 application, or TPS2550DRVTG4 equivalent, key selection criteria include its active-low enable logic, 1-μA standby supply current, ±2000-V HBM ESD rating, and compatibility with 14.3 kΩ–80.6 kΩ external current-limit resistors for precise I_LIM tuning.

Technical Context

The TPS2550DRVTG4 implements an internal charge pump to drive the N-channel MOSFET gate above the source, enabling full enhancement down to 2.5 V input. Its current-limit threshold is set by an external resistor connected between ILIM and GND, with IOC and IOS thresholds governed by process- and temperature-dependent equations.

It features dual thermal protection: foldback shutdown at 135°C (in current-limit mode) and hard cutoff at 155°C (unconditional), both with 15°C hysteresis. Reverse-voltage detection triggers MOSFET turn-off when V_OUT exceeds V_IN by ≥135 mV (typ) for ≥4 ms, asserting FAULT immediately after deglitch.

Key Specifications

Pinout & Package

TPS2550DRVTG4 uses the 6-pin WSON (DRV) package with 2.0 mm × 2.0 mm body size and exposed PowerPAD™ thermally connected to GND.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar current-limited power switch applications.

Compared with TPS2550DRVTG4, TPS2551DRVT offers identical performance with inverted enable polarity - ideal for systems needing consistent active-high logic. AP22653AW5-7 trades adjustability and reverse protection for lower R_DS(on) and smaller footprint, but requires careful validation of fault coverage scope.

Availability

TPS2550DRVTG4 is available at Aetrix Electronics and suitable for USB ports, laptop peripheral hubs, and industrial I/O modules requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for TPS2550DRVTG4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity technologies, with decades of expertise in power management ICs.

The TPS255x family was designed specifically for robust, programmable power distribution in USB, computing, and industrial systems - emphasizing fast fault response, thermal resilience, and ease of current-limit configuration.

FAQ

What is the correct external resistor value to set TPS2550DRVTG4 current limit to 500 mA?

To achieve a nominal 500 mA current-limit threshold (IOC) with the TPS2550DRVTG4, use R_ILIM ≈ 38.3 kΩ. This value yields IOC(typ) = 715 mA and IOC(min) = 670 mA per TI's published equation IOC(typ) = (23800 V)/(R_ILIM kΩ)^0.985 + 50. For tighter tolerance, select a 1% metal-film resistor and verify with bench testing under worst-case temperature and VIN conditions. The TPS2550DRVTG4 datasheet Figure 9-1 confirms this mapping visually.

Does TPS2550DRVTG4 support reverse-voltage protection when V_OUT is 5.5 V and V_IN is 0 V?

Yes - the TPS2550DRVTG4 reverse-voltage comparator activates when V_OUT exceeds V_IN by ≥95 mV (min), 135 mV (typ), or 190 mV (max). At V_OUT = 5.5 V and V_IN = 0 V, the 5.5 V differential far exceeds the trip threshold, causing immediate MOSFET turn-off within 3–7 ms. Reverse leakage remains ≤1 μA at 25°C, ensuring minimal power loss. This behavior is confirmed in Section 7.5 of the TPS2550DRVTG4 datasheet.

Can TPS2550DRVTG4 be used with a 2.5 V input supply?

Yes - the TPS2550DRVTG4 operates across 2.5 V to 6.5 V input, with guaranteed functionality at 2.5 V including full current-limit accuracy, 2 μs overcurrent response, and proper charge-pump operation. At 2.5 V, rise time increases to 0.65–1.0 ms (per Section 7.5), and r_DS(on) rises to 145 mΩ (DRV package, –40°C to 125°C), resulting in ~145 mW conduction loss at 1 A. The TPS2550DRVTG4 UVLO threshold is 2.35–2.45 V, ensuring reliable startup.

How does the FAULT pin behave during thermal shutdown on TPS2550DRVTG4?

During thermal shutdown, the TPS2550DRVTG4 asserts FAULT low immediately - unlike overcurrent or reverse-voltage faults, thermal events are not deglitched. FAULT remains low until junction temperature falls below the hysteresis threshold (~140°C for 135°C trip, or ~140°C for 155°C trip). The TPS2550DRVTG4 cycles on/off autonomously during sustained overload, with FAULT pulsing low each time thermal shutdown activates. This real-time signaling enables host MCU fault logging without external monitoring circuitry.

Is TPS2550DRVTG4 pin-compatible with TPS2550DBVR?

No - TPS2550DRVTG4 uses the 6-pin WSON (DRV) package (2.0 mm × 2.0 mm), while TPS2550DBVR uses the 6-pin SOT-23 (DBV) package (2.9 mm × 1.6 mm). Pin functions are identical (IN, OUT, GND, EN, FAULT, ILIM), but land patterns, thermal pad layout, and solder reflow profiles differ. Migration requires PCB redesign. Both share the same electrical specifications and functional behavior, but TPS2550DRVTG4 offers lower θ_JA (140°C/W vs. 350°C/W on low-K board) due to superior thermal coupling via PowerPAD™.