Texas Instruments TPS3613-01DGS

Overview

TPS3613-01DGS from Texas Instruments is a precision battery-supervisory IC with backup-battery switchover, dual reset outputs (active-high and active-low), chip-enable gating, and adjustable supply voltage monitoring via external resistor divider. It delivers 40 µA max VDD supply current, 100 nA max battery supply current, and fixed 100-ms power-on reset delay. It is used in portable battery-powered equipment to retain CMOS RAM during brownout or main power failure.

For engineers reviewing the TPS3613-01DGS datasheet, TPS3613-01DGS pinout, TPS3613-01DGS application, or TPS3613-01DGS equivalent, key selection considerations include its dual reset polarity support, VBAT > VDD switchover capability, sub-100 ns CEIN-to-CEOUT propagation delay at 5 V, 10-pin VSSOP package, and −40°C to +85°C industrial temperature range.

Technical Context

The TPS3613-01DGS integrates a precision 1.15 V reference, adjustable threshold sense input (SENSE), internal 100-ms reset timer, and dual-path power switching: a 1-Ω (max) PMOS switch from VDD to VOUT and an 8–15 Ω NMOS switch from VBAT to VOUT. Its chip-enable gating uses a series transmission gate with <3 ns propagation delay at VDD = 5 V and automatic high-impedance CEIN disable during reset assertion.

It operates across 1.65 V to 5.5 V VDD and 1.5 V to 5.5 V VBAT, supports manual reset (MR) with 0.1–1 µs response, and features 12 mV hysteresis on the SENSE input and 55 mV hysteresis on VBSW for stable switchover. The device asserts RESET/RESET when VDD or VBAT rises above 1.1 V and maintains reset until SENSE exceeds VIT = 1.15 V ±20 mV.

Key Specifications

Pinout & Package

TPS3613-01DGS is housed in a 10-pin VSSOP (DGS) package, 3.0 mm × 3.0 mm × 1.1 mm, with exposed thermal pad (not electrically connected), RoHS-compliant NiPdAu finish, and JEDEC MO-187 BA compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar supervisory and battery-switchover applications.

Compared with TPS3613-01DGS, TPS3613-01DGSR offers identical functionality in optimized packaging for production lines, while MAX6361LCS18+T sacrifices adjustability, CE control, and switchover capability for lower static current-making it unsuitable as a drop-in replacement in RAM-retention designs.

Availability

TPS3613-01DGS is available at Aetrix Electronics and suitable for portable battery-powered equipment, automotive infotainment modules, and set-top box designs requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for TPS3613-01DGS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 50 years of innovation in high-reliability industrial and automotive components.

The TPS3613 family is designed specifically for systems requiring robust backup-battery switchover, precise voltage supervision, and chip-enable gating to protect volatile memory-targeting portable, automotive, and industrial equipment where data integrity during power transitions is mission-critical.

FAQ

What is the primary function of the TPS3613-01DGS in a system?

The TPS3613-01DGS serves as a supervisory IC that monitors main supply (VDD) and backup battery (VBAT) voltages, provides dual-polarity reset signaling, gates chip-enable signals to prevent memory corruption, and automatically switches CMOS RAM power between VDD and VBAT. Its core function is ensuring data retention and reliable system reset during power transitions-critical in TPS3613-01DGS-based fax machines, set-top boxes, and portable monitoring devices.

Can the reset threshold voltage of the TPS3613-01DGS be adjusted, and how?

Yes, the TPS3613-01DGS features an adjustable reset threshold via the SENSE pin, which accepts an external resistor divider from VDD to GND. The internal 1.15 V reference compares against the divided voltage, allowing VIT to be set between 1.13 V and 1.65 V. This adjustment is confirmed in the Electrical Characteristics table (VIT min/max) and Functional Schematic of the TPS3613-01DGS datasheet, enabling custom reset points for non-standard supply rails.

Does the TPS3613-01DGS support simultaneous use of VDD and VBAT supplies?

Yes, the TPS3613-01DGS supports concurrent VDD and VBAT connection, with automatic switchover logic that engages VBAT only when VDD falls below VIT and VBAT exceeds VDD. The device's internal architecture isolates VBAT from VOUT until switchover is needed, and allows VBAT to exceed VDD-enabling use of higher-voltage backup cells (e.g., 3.6 V lithium) with lower main supplies (e.g., 1.8 V). This behavior is explicitly defined in the "Backup-Battery Switchover" section of the TPS3613-01DGS datasheet.

What is the maximum continuous output current capability of the TPS3613-01DGS VOUT pin?

The TPS3613-01DGS VOUT pin supports up to 300 mA continuous output current under recommended operating conditions, with absolute maximum rating of 400 mA. At 200 mA load and VDD = 5 V, VOUT regulation remains within VDD − 200 mV, confirming robust drive capability for typical CMOS RAM and RTC loads. These values are specified in the Recommended Operating Conditions and Electrical Characteristics tables of the TPS3613-01DGS datasheet.

How does the chip-enable (CE) gating feature of the TPS3613-01DGS prevent memory corruption?

The TPS3613-01DGS disables the CEIN-to-CEOUT transmission gate during reset assertion, placing CEIN in high-impedance state and pulling CEOUT to VOUT via an internal active pullup. This prevents spurious CE transitions from reaching memory during undervoltage, while the <3 ns propagation delay (at VDD = 5 V) ensures timing-critical systems remain unaffected during normal operation. The mechanism is detailed in the "Chip-Enable Signal Gating" section and Function Table of the TPS3613-01DGS datasheet.