Texas Instruments TPS51100DGQG4

Overview

TPS51100DGQG4 from Texas Instruments is a 3-A sink/source DDR termination regulator with integrated VTTREF buffered reference output, designed for DDR, DDR2, and DDR3 memory bus termination. It operates from 4.75 V to 5.25 V VIN and supports VLDOIN from 1.2 V to 3.6 V, delivers ±20 mV accuracy on both VTT and VTTREF, and maintains fast transient response using only 20 µF ceramic output capacitance (2 × 10 µF). It is used in notebook PCs and space-constrained embedded systems requiring JEDEC-compliant SSTL-2/SSTL-18/HSTL termination.

For engineers reviewing the TPS51100DGQG4 datasheet, TPS51100DGQG4 pinout, TPS51100DGQG4 application, or TPS51100DGQG4 equivalent, key selection criteria include its dual-state S3/S5 sleep control, remote sensing (VTTSNS), droop compensation, ±40 mV load regulation over ±3 A, and thermal shutdown at 160°C - all critical for reliable DDR memory power integrity in low-power portable designs.

Technical Context

The TPS51100DGQG4 integrates a high-performance linear LDO with symmetrical sink/source capability up to 3 A, employing a fast-response feedback loop optimized for ceramic-only output filtering. Its VTTREF block includes an on-chip 1/2 divider, low-pass filter, and 10-mA buffered output referenced to VDDQSNS.

It implements non-latching UVLO on VIN (3.4–4.0 V threshold), dual-stage soft-start with current-limit switching (2.2 A → 3.8 A), and independent S3/S5 logic-controlled functional modes: active (S3=H, S5=H), Hi-Z suspend (S3=L, S5=H), and soft-off discharge (S3=L, S5=L) for both VTT and VTTREF.

Key Specifications

Pinout & Package

The TPS51100DGQG4 is housed in a thermally enhanced 10-pin HVSSOP PowerPAD™ package (3.00 mm × 3.00 mm body, 4.98 mm × 3.05 mm overall), featuring an exposed die pad for PCB-level thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR termination regulator applications.

Compared with TPS51100DGQG4, TPS51200DGQ provides higher current headroom and tighter VDDQ tracking but demands layout revision, while ISL6537CRZ retains basic sink/source capability but sacrifices integrated reference accuracy, sleep-state control, and component count efficiency.

Availability

TPS51100DGQG4 is available at Aetrix Electronics and suitable for DDR memory termination, SSTL-18 interface power, and HSTL Class I bus applications requiring stable component supply, JEDEC compliance, and thermal robustness in compact form factors.

Supply support for TPS51100DGQG4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of expertise in DDR power architecture and JEDEC-compliant interface solutions.

The TPS51100DGQG4 belongs to TI's DDR termination regulator product line, engineered specifically for space-constrained, low-cost systems needing integrated VTT/VTTREF with ACPI-compliant S3/S5 power sequencing - targeting notebook, embedded, and industrial memory subsystems.

FAQ

What is the primary function of the TPS51100DGQG4 in DDR memory systems?

The TPS51100DGQG4 serves as a 3-A sink/source termination regulator that supplies precisely tracked VTT voltage and a buffered VTTREF reference for DDR, DDR2, and DDR3 memory buses. It maintains ±20 mV accuracy across load, temperature, and input variations while supporting JEDEC-compliant SSTL and HSTL signaling standards - all within a compact 10-pin HVSSOP PowerPAD™ package.

How does the TPS51100DGQG4 handle power sequencing during system sleep states?

The TPS51100DGQG4 uses dedicated S3 and S5 inputs to implement ACPI-defined power states: in S3 (S3=L, S5=H), VTT enters high-impedance while VTTREF remains active for memory retention; in S5 (S3=L, S5=L), both VTT and VTTREF are actively discharged to ground via internal MOSFETs. This eliminates need for external discharge circuits and ensures clean, controlled power-down.

What output capacitance is required for stable operation of the TPS51100DGQG4?

The TPS51100DGQG4 requires a minimum of 20 µF ceramic output capacitance at the VTT pin - typically implemented as two parallel 10 µF X5R 0805 capacitors (e.g., TDK C2012JB0J106K). This value ensures loop stability, meets transient response requirements, and avoids need for electrolytic or tantalum capacitors, directly supporting space-constrained and high-reliability designs.

Can the TPS51100DGQG4 be used for DDR3L (1.35 V) memory termination?

Yes, the TPS51100DGQG4 supports DDR3L termination when VLDOIN is set to 1.35 V, producing VTT = 0.675 V and VTTREF = 0.675 V. Its ±20 mV accuracy meets DDR3L's ±2.5% VTT tolerance requirement (±16.9 mV), and its 3-A sink/source capability handles DDR3L's dynamic current demands. Remote sensing via VTTSNS ensures accuracy at the memory module, not just at the IC pin.

What thermal considerations apply to the TPS51100DGQG4 in high-current applications?

The TPS51100DGQG4 dissipates power as W = (VLDOIN − VTT) × IVTT (source) or VTT × IVTT (sink). At 3 A and 1.5 V VTT with 1.8 V VLDOIN, worst-case dissipation exceeds 0.9 W. To maintain junction temperature below 125°C, use the exposed PowerPAD™ with ≥3 mm × 3 mm thermal land, ≥4 thermal vias to inner ground planes, and ensure θJA stays ≤50°C/W - verified via TI's SLMA002 layout guidelines.