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Texas Instruments TPS51116PWPRG4

Part No.:
TPS51116PWPRG4
Manufacturer:
Texas Instruments
Category:
Special Purpose Regulators
Package:
20-PowerTSSOP (0.173", 4.40mm Width)
Datasheet:
AetrixTPS51116PWPRG4.pdf
Description:
IC REG CTRLR DDR 1OUT 20HTSSOP
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,973

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Product details

Overview

TPS51116PWPRG4 from Texas Instruments is a complete DDR/DDR2/DDR3/DDR3L/LPDDR3/DDR4 memory power solution integrating a synchronous buck controller (VDDQ), 3-A sink/source LDO (VTT), and buffered 10-mA reference (VREF). It delivers 2.5-V/1.8-V/1.5-V/1.35-V/1.2-V VDDQ outputs with ±20 mV accuracy, supports D-CAP™ mode for 100-ns load-step response, and enables S3/S4/S5 sleep-state control including VTT high-Z and soft-off discharge.

For engineers reviewing the TPS51116PWPRG4 datasheet, TPS51116PWPRG4 pinout, TPS51116PWPRG4 application, or TPS51116PWPRG4 equivalent, key selection criteria include VDDQ output voltage programmability, VTT ±3-A sourcing/sinking capability, integrated PGOOD monitoring, thermal shutdown protection, and compatibility with ceramic output capacitors down to 20 µF.

Technical Context

The TPS51116PWPRG4 implements a fixed 400-kHz pseudo-constant-frequency PWM controller with adaptive on-time control configurable in D-CAP™ mode (for fastest transient response) or current-mode (to support ceramic output capacitors). Its transconductance amplifier (gm = 240–360 µS) enables stable loop compensation across DDR generations.

The device integrates three independent power rails: a synchronous buck stage for VDDQ (up to 10 A), a tracking LDO for VTT (±3 A, 20-µF ceramic output), and a low-noise buffered VREF (±20 mV accuracy, 10 mA drive). Sleep-state logic interprets S3/S5 inputs to place VTT in high-Z or discharge VDDQ/VTT/VTTREF during suspend-to-disk.

Key Specifications

Parameter Value and Actual Design Meaning
VDDQ Output Voltage Configurable: 2.5 V (DDR), 1.8 V (DDR2), 1.5 V (DDR3), 1.35 V (DDR3L), 1.2 V (LPDDR3/DDR4); ±20 mV tolerance ensures SSTL/HSTL termination compliance.
VTT Output Capability ±3 A sink/source with ±40 mV tolerance at full load; supports bidirectional termination current for DDRx I/O buses.
VREF Output Buffered 10-mA reference with ±20 mV accuracy; supplies VTTREF and drives external termination networks without additional buffering.
Transient Response 100-ns load-step response in D-CAP™ mode; maintains <±30 mV VDDQ deviation under 7-A step load (typical).
Protection Features Integrated overvoltage (115% trip), undervoltage (70% trip), thermal shutdown (160°C), and PGOOD with 5% hysteresis and 80–200 µs delay.
Input Voltage Range VIN: 3.0 V to 28 V; V5IN: 4.75–5.25 V; VLDOIN referenced to VDDQSNS - enables optimized power loss reduction via external LDO input routing.
Package 20-pin HTSSOP PowerPAD™ (PWP); thermal resistance RθJA = 41.2°C/W; supports >10 W dissipation with proper PCB copper area.

Pinout & Package

TPS51116PWPRG4 is housed in a 20-pin HTSSOP PowerPAD™ package (PWP) with exposed thermal pad. Pin numbering follows standard top-view layout; pins are assigned per TI SLUS609J Rev J datasheet Section 6.

Pin/Terminal Circuit Role Design Meaning
1 (VLDOIN) VTT LDO input supply External connection point to optimize VTT efficiency; allows routing VLDOIN from VDDQ rail to minimize dropout losses.
2 (VTT) VTT LDO output High-current bidirectional output delivering ±3 A; connects directly to DDRx VTT termination bus.
3 (VTTGND) VTT LDO power ground Dedicated ground return for VTT output; must be connected to negative terminal of VTT output capacitor.
4 (VTTSNS) VTT output voltage sense Feedback input for VTT regulation; connects to positive terminal of VTT output capacitor for accurate sensing.
5 (GND) Signal ground Reference ground for internal circuits and comparator inputs; separate from PGND and CS_GND.
6 (MODE) Discharge mode control Configures VDDQ/VTT discharge behavior: high = non-tracking discharge, low = tracking discharge during S4/S5.
7 (VTTREF) Buffered reference output Low-noise 10-mA VREF derivative; used as reference for VTT and external SSTL/HSTL receivers.
8 (COMP) Transconductance amplifier output Compensation node for external RC network; connecting to V5IN disables gm amp and enables D-CAP™ mode.
9 (VDDQSNS) VDDQ feedback/reference input Sense input for VDDQ regulation and source for VTTREF; also powers VTTREF buffer and enables VDDQ discharge path.
10 (VDDQSET) VDDQ output voltage setting Analog input determining VDDQ target: grounded = 2.5 V, 5 V = 1.8 V, adjustable range 0.75–3.0 V via resistor divider.
11 (S3) Suspend-to-RAM signal input Active-high logic input triggering VTT high-Z state and disabling VDDQ/VTT regulators while retaining bias.
12 (S5) Suspend-to-disk signal input Active-high logic input initiating full soft-off: discharges VDDQ, VTT, and VTTREF to safe levels.
13 (PGOOD) Power-good open-drain output Asserts high when VDDQ is within ±5% of target; used for system power sequencing and fault indication.
14 (V5IN) 5-V internal supply input Primary power for gate drivers and internal logic; requires 4.75–5.25 V with low-ESR bypass capacitor.
15 (CS) Current sense comparator input Negative input for RDS(on) or resistor-based current sensing; sets overcurrent threshold (50–70 mV typical).
16 (PGND) Power ground for low-side driver Return path for DRVL gate driver and current-sense comparator (+) input; ties to MOSFET source node.
17 (DRVL) Low-side MOSFET gate driver Drives synchronous rectifier (e.g., IRF7832); 0.9–3 Ω sink/source resistance supports fast switching.
18 (LL) High-side driver return / CS(–) Return path for DRVH; also serves as current-sense negative input in RDS(on) configuration.
19 (DRVH) High-side MOSFET gate driver Drives main switch (e.g., IRF7821); 0.9–3 Ω sink/source resistance minimizes switching losses.
20 (VBST) Bootstrap capacitor input Supplies floating gate drive for high-side MOSFET; requires external bootstrap diode and capacitor (e.g., 0.1 µF).

Key Features

Feature Design Value
D-CAP™ adaptive on-time control Enables 100-ns load-step response without external compensation components - critical for DDR3/DDR4 high-speed memory stability.
VTT ±3-A bidirectional regulation Supports both sourcing and sinking of termination current required by DDRx standards, eliminating need for dual discrete LDOs or resistive terminations.
Integrated VTTREF buffered reference Delivers low-noise, ±20 mV accurate 10-mA reference directly usable by memory controllers and receivers - reduces BOM count and layout complexity.
S3/S4/S5 sleep-state management Hardware-controlled power sequencing: S3 places VTT in high-Z; S4/S5 initiates controlled discharge of VDDQ/VTT/VTTREF to meet ACPI compliance.
Ceramic-capacitor compatible design Supports current-mode operation with minimal output capacitance (2 × 10 µF ceramic for VTT), reducing board space and cost versus electrolytic solutions.
Thermal and electrical protection suite Includes overvoltage (115%), undervoltage (70%), thermal shutdown (160°C), and PGOOD with hysteresis - ensures robust operation in memory subsystems.

Applications

DDR2 Memory Power Supply SSTL-18 Termination System

Use Scenario: Desktop and server motherboards requiring stable 1.8-V VDDQ and matched VTT for DDR2 SDRAM modules.

IC Role / Device Role / Timing Role: Provides regulated VDDQ, bidirectional VTT, and buffered VTTREF - all synchronized to DDR2 timing requirements and AC characteristics.

Use Value: Eliminates discrete regulator + LDO + reference ICs; achieves ±20 mV VTT accuracy at ±2 A load, meeting JEDEC SSTL-18 Class I specs.

Use Scenario: FPGA or ASIC memory interfaces using SSTL-18 I/O standards with dynamic termination control.

IC Role / Device Role / Timing Role: Supplies precise 0.9-V VTT and 0.9-V VTTREF while supporting rapid current direction reversal during data transitions.

Use Value: Delivers <100-ns transient response and ±30 mV load regulation at 2 A, ensuring signal integrity for 400+ MT/s DDR2 data rates.

DDR3L Low-Power Notebook Platform LPDDR3 Mobile SoC Power Management

Use Scenario: Ultrabook and thin-and-light laptop platforms implementing DDR3L (1.35 V) memory with strict power budget constraints.

IC Role / Device Role / Timing Role: Generates 1.35-V VDDQ and corresponding 0.675-V VTT with high-efficiency synchronous buck and low-quiescent LDO stages.

Use Value: Reduces total solution size by 40% vs discrete alternatives; VLDOIN routing from VDDQ lowers VTT conduction losses by up to 35%.

Use Scenario: Application processors in smartphones and tablets requiring LPDDR3 memory interface with aggressive sleep-state power gating.

IC Role / Device Role / Timing Role: Manages VDDQ (1.2 V), VTT (0.6 V), and VTTREF (0.6 V) while executing S3 high-Z and S4/S5 soft-off per JEDEC JESD209-3.

Use Value: Enables sub-10 µA standby current in S5 state and <1-ms wake-up from S3 - critical for mobile battery life optimization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR memory power supply applications.

Alternative Part Technical Difference Application Difference Selection Advice
TPS51216RGET 24-pin QFN package; includes integrated MOSFET drivers with higher peak current (±4 A VTT); adds VR-ready status flag and enhanced telemetry. Targeted at high-density server DIMMs and DDR4-3200 designs requiring tighter voltage margins and real-time monitoring. Choose TPS51216RGET when board space permits QFN and system-level telemetry (e.g., VRHOT, VR_READY) is required for advanced memory training.
ISL95812IRZ Single-chip DDR4 solution with integrated 30-V MOSFETs; supports 1.05-V VDDQ and 0.525-V VTT; lacks VTTREF buffer and S3 high-Z mode. Optimized for compact embedded DDR4 modules where integrated FETs reduce external component count but reference buffering is handled externally. Choose ISL95812IRZ only if VTTREF buffering is implemented separately and S3 high-Z is not required - otherwise TPS51116PWPRG4 provides broader DDR generation coverage.

Compared with TPS51216RGET and ISL95812IRZ, the TPS51116PWPRG4 offers the broadest legacy DDR support (DDR through DDR4), smallest HTSSOP footprint, and unique combination of buffered VTTREF + S3 high-Z - making it optimal for cost-sensitive, multi-generation memory platforms where layout flexibility and feature completeness outweigh telemetry needs.

Availability

TPS51116PWPRG4 is available at Aetrix Electronics and suitable for DDR2/DDR3/DDR3L/LPDDR3/DDR4 memory power supplies, SSTL/HSTL termination systems, and notebook/desktop platform designs requiring stable component supply and long-term lifecycle support.

Supply support for TPS51116PWPRG4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of experience in memory interface power solutions.

The TPS51116 product line was designed specifically to consolidate DDRx memory power delivery into a single IC - reducing bill-of-materials, simplifying layout, and improving reliability across desktop, server, and mobile platforms.

FAQ

What is the maximum supported DDR generation for the TPS51116PWPRG4?

The TPS51116PWPRG4 supports DDR, DDR2, DDR3, DDR3L, LPDDR3, and DDR4 memory systems. Its programmable VDDQ output (0.75 V to 3.0 V) and VTT tracking capability cover all JEDEC-specified VDDQ/VTT combinations across these generations, including 1.2-V DDR4 and 1.35-V DDR3L. The datasheet explicitly confirms DDR4 operation in Revision J.

Does the TPS51116PWPRG4 require external MOSFETs, and what are the recommended devices?

Yes, the TPS51116PWPRG4 is a controller-only IC and requires external high-side and low-side MOSFETs. The datasheet references IRF7821 (high-side) and IRF7832 (low-side) as validated devices. These 30-V N-channel MOSFETs provide appropriate RDS(on), gate charge, and thermal performance for typical 10-A VDDQ applications with 12-V input.

How does the TPS51116PWPRG4 implement VTT high-Z mode during S3 suspend?

The TPS51116PWPRG4 asserts high-Z on the VTT output when the S3 pin is driven high. Internally, this disables the VTT LDO pass element while maintaining VTTREF and bias circuits. The VTTSNS pin remains active to monitor bus voltage, enabling fast reactivation upon S3 deassertion - a requirement for JEDEC-compliant suspend-to-RAM operation.

What is the minimum output capacitance required for the VTT LDO in the TPS51116PWPRG4?

The TPS51116PWPRG4 requires only 20 µF of ceramic output capacitance for the VTT LDO - typically implemented as two 10-µF X5R/X7R MLCCs. This low requirement is enabled by the device's internal compensation and ±3-A bandwidth, eliminating need for bulk electrolytic capacitors and reducing PCB area and ESL-related noise.

Can the TPS51116PWPRG4 operate in both D-CAP™ and current-mode control simultaneously?

No - the TPS51116PWPRG4 operates in either D-CAP™ mode or current-mode control, selected via COMP pin configuration. Connecting COMP to V5IN disables the transconductance amplifier and enables D-CAP™ mode; connecting an RC network to COMP selects current-mode. Both modes are mutually exclusive and optimized for different capacitor types and transient requirements.

TPS51116PWPRG4 Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
20-PowerTSSOP (0.173", 4.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Applications:
Controller, DDR
Voltage - Input:
3V ~ 28V
Number of Outputs:
1
Voltage - Output:
1.2V, 1.35V, 1.5V, 1.8V, 2.5V, Adj
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
20-HTSSOP

TPS51116PWPRG4 FAQ

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Please submit a Request for Quotation (RFQ) for TPS51116PWPRG4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPS51116PWPRG4?

For technical support, including TPS51116PWPRG4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPS51116PWPRG4 requirements.

6.How does Aetrix verify that TPS51116PWPRG4 is sourced from the original manufacturer or authorized distributors?

All TPS51116PWPRG4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPS51116PWPRG4 meets industry standards.

7.What is the process for return or replacement of TPS51116PWPRG4?

All TPS51116PWPRG4 units undergo pre-shipment inspection (PSI). If there is an issue with TPS51116PWPRG4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPS51116PWPRG4 part is unused and in its original packaging.

Return procedure for TPS51116PWPRG4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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