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Texas Instruments TPS51116RGERG4
- Part No.:
- TPS51116RGERG4
- Manufacturer:
- Texas Instruments
- Category:
- Special Purpose Regulators
- Package:
- 24-VFQFN Exposed Pad
- Datasheet:
-
TPS51116RGERG4.pdf
- Description:
- IC REG CTRLR DDR 1OUT 24VQFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,538
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Product details
Overview
TPS51116RGERG4 from Texas Instruments is a complete DDR/DDR2/DDR3/DDR3L/LPDDR3/DDR4 memory power solution integrating a synchronous buck controller (VDDQ), 3-A sink/source LDO (VTT), and buffered 10-mA reference (VREF). It delivers 10-A VDDQ output at 1.8 V, 0.9-V ±20-mV VTT with ±3-A capability, and 0.9-V ±20-mV VREF - all in a 24-pin 4×4 QFN package for high-density memory subsystems.
For engineers reviewing the TPS51116RGERG4 datasheet, TPS51116RGERG4 pinout, TPS51116RGERG4 application, or TPS51116RGERG4 equivalent, key selection criteria include D-CAP™ vs current-mode operation support, S3/S4/S5 sleep-state control logic, VDDQ/VTT tracking accuracy, thermal shutdown at 160°C, and compatibility with ceramic output capacitors down to 20 µF for VTT.
Technical Context
The TPS51116RGERG4 implements a pseudo-constant-frequency 400-kHz PWM controller with adaptive on-time control configurable in D-CAP™ mode (100-ns load-step response) or current mode (ceramic-capacitor compatible). Its integrated transconductance amplifier (gm = 240–360 µS) enables precise loop compensation via the COMP pin.
The device supports dual-path discharge control: non-tracking discharge of VDDQ, VTT, and VTTREF during S4/S5 states (soft-off), and high-Z VTT state during S3 (suspend-to-RAM), using dedicated S3/S5 input pins and MODE pin logic. VTT regulation maintains ±20-mV tolerance to VTTREF across full ±3-A sink/source range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDDQ Output | Adjustable 0.75–3.0 V; factory-set 2.5 V (DDR) or 1.8 V (DDR2); ±0.5% accuracy over temperature |
| VTT Output | ±3-A sink/source; tracks VTTREF with ±20 mV tolerance at 0 A, ±40 mV at full load; supports DDR4 1.2-V systems |
| VTTREF Output | Buffered 10-mA reference; ±20-mV accuracy relative to VDDQSNS/2; low-noise for SSTL/HSTL termination |
| Control Modes | D-CAP™ (100-ns transient response) or current-mode (supports ceramic output caps); selectable via COMP pin configuration |
| Protection | Overvoltage (110–120%), undervoltage (70%), thermal shutdown (160°C), and PGOOD with 5% hysteresis |
| Package | 24-pin QFN (RGE), 4 mm × 4 mm, PowerPAD™ thermal pad; RθJA = 35.3°C/W |
Pinout & Package
TPS51116RGERG4 is housed in a 24-pin QFN (RGE) package with exposed thermal pad. Pin numbering follows top-view layout; pin 1 is marked by dot or beveled corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | VLDOIN | VTT LDO input supply; externally connected to VDDQ rail to minimize power loss and improve efficiency |
| 2 | VTTSNS | VTT output voltage sense; connects to positive terminal of VTT output capacitor for accurate regulation |
| 3 | VTTGND | VTT LDO power ground; separate from signal GND to reduce noise coupling into sensitive analog blocks |
| 4 | VTT | VTT LDO output; capable of sourcing/sinking up to ±3 A for DDR termination networks |
| 5 | VTTREF | Buffered reference output; supplies low-noise 10-mA reference for VTT and VDDQSET circuits |
| 6 | MODE | Discharge mode select; sets VDDQ/VTT discharge behavior during S4/S5 states (tracking vs non-tracking) |
| 7 | COMP | Transconductance amplifier output; used for loop compensation; tied to V5FILT to enable D-CAP™ mode |
| 8 | VDDQSNS | VDDQ feedback and VTTREF reference source; also serves as discharge path for VDDQ during S4/S5 |
| 9 | VDDQSET | VDDQ output voltage programming input; resistor-divider sets target voltage (e.g., 1.8 V for DDR2) |
| 10 | S3 | Suspend-to-RAM control input; places VTT in high-Z state when asserted |
| 11 | S5 | Suspend-to-disk control input; initiates soft-off discharge of VDDQ, VTT, and VTTREF |
| 12 | NC | No connect; internally unused; must remain unconnected per datasheet |
| 13 | PGOOD | Open-drain power-good indicator; asserts HIGH when VDDQ is within ±2.5% of target |
| 14 | V5FILT | Filtered 5-V internal supply input; requires RC filter from V5IN to reduce switching noise |
| 15 | CS | Current-sense comparator input (−); sets overcurrent threshold for RDS(on) or resistor sensing |
| 16 | PGND | Power ground for low-side MOSFET driver and current-sense circuitry; ties to system PGND plane |
| 17 | CS_GND | Current-sense comparator input (+) and PGOOD ground reference; connects to VTT output capacitor negative |
| 18 | DRVL | Low-side MOSFET gate driver output; drives IRF7832-type N-channel FET with 0.9–3 Ω sink/source resistance |
| 19 | DRVH | High-side MOSFET gate driver output; drives IRF7821-type N-channel FET; bootstrap-fed via VBST |
| 20 | LL | High-side driver return and RDS(on) current-sense (−) input; critical for accurate current monitoring |
| 21 | VBST | Bootstrap capacitor input for high-side driver; requires external 0.1-µF ceramic capacitor to SW node |
| 22 | V5IN | Main 5-V supply for internal logic and gate drivers; regulated input required (4.75–5.25 V) |
| 23 | V5FILT | Redundant filtered 5-V input; same function as pin 14; both pins must be connected per layout guidelines |
| 24 | GND | Signal ground reference; connects to system AGND plane; isolated from PGND for noise immunity |
Key Features
| Feature | Design Value |
|---|---|
| D-CAP™ fast transient response | 100-ns load-step response enables stable DDR4 3200 MT/s operation without external compensation |
| VTT sink/source symmetry | ±3-A capability ensures bidirectional termination current handling for SSTL-15 and HSTL interfaces |
| VTTREF buffering | 10-mA buffered output eliminates need for external op-amp buffers in DDR3L/DDR4 reference chains |
| S3/S4/S5 state control | Dedicated logic inputs enable precise power-state sequencing per JEDEC JESD79 standards |
| Ceramic capacitor support | Current-mode option allows use of low-ESR ceramic caps (e.g., 2 × 10 µF) instead of bulk SP-CAPs |
Applications
| DDR4 Server Memory Modules | SSTL-15 Termination for FPGA I/O Banks |
|---|---|
Use Scenario: High-speed DDR4 RDIMMs in 2U rack servers requiring 1.2-V VDDQ and matched VTT/VTTREF rails. IC Role / Device Role / Timing Role: Primary power controller delivering 10-A VDDQ, ±3-A VTT, and buffered VTTREF for JEDEC-compliant DDR4 termination. Use Value: Integrated tracking and soft-off discharge eliminate discrete LDOs and sequencing ICs, reducing BOM count by 3 components. | Use Scenario: FPGA-based industrial control board with 72-bit wide DDR3L interface operating at 1866 MT/s. IC Role / Device Role / Timing Role: Single-chip DDR3L power solution providing 1.35-V VDDQ, 0.675-V VTT, and precision VTTREF for SSTL-15 I/O banks. Use Value: ±20-mV VTT tolerance to VTTREF ensures <1% termination error margin under full ±2-A load, meeting Xilinx Kintex-7 timing closure requirements. |
| HSTL Class-I Termination | LPDDR3 Mobile SoC Power |
Use Scenario: High-performance test equipment using ASICs with HSTL Class-I I/O requiring 1.5-V termination. IC Role / Device Role / Timing Role: Generates 1.5-V VDDQ and precisely tracked 0.75-V VTT/VTTREF pair with sub-20-mV matching. Use Value: D-CAP™ mode delivers <150-mV VDDQ droop during 8-A step loads, maintaining HSTL timing margins below 10 ps jitter. | Use Scenario: Automotive infotainment SoC with LPDDR3 memory subsystem needing ultra-low quiescent current in standby. IC Role / Device Role / Timing Role: Provides 1.2-V VDDQ and 0.6-V VTT with S3 high-Z and S4/S5 soft-off for ASIL-B compliant power sequencing. Use Value: VLDOIN shutdown current <1 µA in S5 state extends battery runtime by >12 hours versus discrete solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR memory power management applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS51216RGER | Same RGE package; adds PMBus interface, dynamic voltage scaling, and enhanced telemetry; higher quiescent current (2 mA vs 0.8 mA) | Required for systems needing real-time VDDQ margining or telemetry logging; not drop-in due to added communication pins | Select TPS51216RGER only if digital control and telemetry are mandatory; otherwise TPS51116RGERG4 offers lower cost and simpler layout. |
| ISL6537CRZ | Legacy 28-pin SOIC; supports DDR/DDR2 only; no DDR3L/DDR4 modes; lacks VTTREF buffer; requires external op-amp | Limited to legacy DDR2 designs; cannot meet DDR4 1.2-V VDDQ or 0.6-V VTT specs | Use ISL6537CRZ only for cost-sensitive DDR2 upgrades where footprint change is acceptable; not suitable for new DDR3L/DDR4 designs. |
Compared with TPS51216RGER and ISL6537CRZ, the TPS51116RGERG4 provides optimal balance of DDR4 readiness, analog simplicity, and thermal performance in a compact QFN - making it ideal for space-constrained embedded DDR memory rails where digital control is unnecessary.
Availability
TPS51116RGERG4 is available at Aetrix Electronics and suitable for DDR4 server memory modules, FPGA-based DDR3L systems, HSTL Class-I termination boards, and LPDDR3 automotive SoC power supplies requiring stable component supply and long-term lifecycle support.
Supply support for TPS51116RGERG4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies with over 50 years of innovation in high-reliability power solutions.
The TPS51116 product line was designed specifically for JEDEC-compliant DDR memory power delivery - integrating VDDQ buck control, VTT LDO, and VTTREF buffering into one IC to reduce footprint, simplify layout, and ensure timing-critical rail coordination.
FAQ
What is the maximum supported DDR standard for TPS51116RGERG4?
The TPS51116RGERG4 fully supports DDR, DDR2, DDR3, DDR3L, LPDDR3, and DDR4 memory standards. It delivers programmable VDDQ outputs from 0.75 V to 3.0 V - including 1.2 V for DDR4 and 1.35 V for DDR3L - and matches VTT/VTTREF rails with ±20-mV accuracy, meeting JEDEC JESD79-4 timing and termination requirements.
Does TPS51116RGERG4 require external compensation components?
No - the TPS51116RGERG4 supports D-CAP™ mode, which uses internal adaptive on-time control and requires no external compensation network when COMP is tied to V5FILT. For current-mode operation (ceramic-capacitor optimized), an external RC network on COMP is needed, but this is optional and application-dependent.
How does TPS51116RGERG4 handle power-state transitions like S3 and S4/S5?
The TPS51116RGERG4 uses dedicated S3 and S5 pins to control state transitions: asserting S3 places VTT in high-Z mode (suspend-to-RAM), while asserting S5 initiates soft-off discharge of VDDQ, VTT, and VTTREF (suspend-to-disk). The MODE pin selects between tracking and non-tracking discharge behavior during S4/S5.
What is the minimum output capacitance required for the VTT LDO in TPS51116RGERG4?
The VTT LDO in TPS51116RGERG4 requires only 20 µF total ceramic output capacitance - typically implemented as two 10-µF X5R/X7R MLCCs - to maintain stability and meet transient response specs. This eliminates need for larger, less reliable SP-CAPs or tantalum capacitors.
Can TPS51116RGERG4 drive both high-side and low-side N-channel MOSFETs?
Yes - the TPS51116RGERG4 integrates dual gate drivers: DRVH (high-side, 21) and DRVL (low-side, 18), each rated for ±100 mA drive strength. It supports bootstrap-fed high-side N-MOS (e.g., IRF7821) and synchronous rectifying low-side N-MOS (e.g., IRF7832), enabling efficient synchronous buck topology.
TPS51116RGERG4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 24-VFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Applications:
- Controller, DDR
- Voltage - Input:
- 3V ~ 28V
- Number of Outputs:
- 1
- Voltage - Output:
- 1.2V, 1.35V, 1.5V, 1.8V, 2.5V, Adj
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-VQFN (4x4)
TPS51116RGERG4 FAQ
1.How can I place an order for TPS51116RGERG4 through Aetrix?
Please submit a Request for Quotation (RFQ) for TPS51116RGERG4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPS51116RGERG4 reliable?
The price and inventory of TPS51116RGERG4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPS51116RGERG4 is usually 5 days.
3.What payment methods are accepted for TPS51116RGERG4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPS51116RGERG4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPS51116RGERG4?
TPS51116RGERG4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPS51116RGERG4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPS51116RGERG4?
For technical support, including TPS51116RGERG4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPS51116RGERG4 requirements.
6.How does Aetrix verify that TPS51116RGERG4 is sourced from the original manufacturer or authorized distributors?
All TPS51116RGERG4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPS51116RGERG4 meets industry standards.
7.What is the process for return or replacement of TPS51116RGERG4?
All TPS51116RGERG4 units undergo pre-shipment inspection (PSI). If there is an issue with TPS51116RGERG4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPS51116RGERG4 part is unused and in its original packaging.
Return procedure for TPS51116RGERG4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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