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Texas Instruments TPS53317RGBR
- Part No.:
- TPS53317RGBR
- Manufacturer:
- Texas Instruments
- Category:
- Special Purpose Regulators
- Package:
- 20-VFQFN Exposed Pad
- Datasheet:
-
TPS53317RGBR.pdf
- Description:
- IC REG CONV DDR 1OUT 20VQFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,964
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Product details
Overview
TPS53317RGBR from Texas Instruments is a 6-A synchronous step-down DC/DC converter with integrated high- and low-side MOSFETs, designed specifically for DDR memory VDDQ termination. It delivers regulated 0.6–2.0 V output with ±1% accuracy, supports both source and sink operation up to 6 A, and employs D-CAP+™ adaptive on-time control for fast transient response in DDR3/DDR4 systems.
For engineers reviewing the TPS53317RGBR datasheet, TPS53317RGBR pinout, TPS53317RGBR application, or TPS53317RGBR equivalent, key selection criteria include its dual-mode (SKIP/forced CCM) operation, selectable 600 kHz/1 MHz switching frequency, integrated droop compensation, external tracking capability, and support for all-MLCC output stages without requiring external compensation components.
Technical Context
The TPS53317RGBR implements D-CAP+™ mode control, where the on-time is dynamically adjusted based on input/output voltage and current feedback-enabling near-constant frequency under steady-state while maintaining rapid load-step response. Its internal current-sense amplifier provides valley overcurrent protection with ±9.3 A negative OCL and +7.6 A positive OCL thresholds.
It integrates a 2.0-V reference (VREF), programmable MODE pin for frequency/operation mode selection, and dedicated pins for external tracking (REFIN), power-good signaling (PGOOD), and bootstrap gate drive (BST). The device operates across –40°C to +85°C and supports pre-bias startup, soft discharge, and full-cycle output sinking for DDR VTT compliance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Current | ±6 A continuous source/sink - enables full DDR VDDQ termination with bidirectional current handling for memory bus integrity. |
| Output Voltage Range | 0.6 V to 2.0 V adjustable - covers DDR3L (1.35 V), DDR4 (1.2 V), and DDR5-compatible VDDQ rails via resistor divider or tracking. |
| Switching Frequency | Selectable 600 kHz or 1 MHz - allows trade-off between efficiency (lower fSW) and component size (higher fSW) in POL designs. |
| Feedback Accuracy | ±1% over temperature - ensures tight regulation required for DDR memory interface timing margins. |
| Protection Features | OVP (117–123% VREFIN), UVP (65–71% VREFIN), thermal shutdown at 145°C, hiccup-mode recovery - safeguards memory subsystem during fault conditions. |
| Package | 3.5 mm × 4 mm, 20-pin VQFN with PowerPAD - provides low thermal resistance (RθJB = 12.4°C/W) for high-current DDR applications. |
| Operating Temperature | –40°C to +85°C ambient - qualified for industrial and embedded DDR memory subsystems. |
Pinout & Package
The TPS53317RGBR is housed in a 3.5 mm × 4 mm, 20-pin VQFN package (RGB suffix) with exposed thermal pad (PowerPAD) for enhanced thermal performance. Pin numbering follows standard top-view layout with pin 1 at top-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| BST (16) | Bootstrap supply | Drives high-side FET gate; requires 0.1-µF capacitor to SW - enables efficient 100% duty cycle capability and robust gate drive. |
| SW (12–15) | Switching node | Four parallel SW pins reduce parasitic inductance and current density - critical for minimizing EMI and conduction loss in 6-A DDR rail. |
| PGND (2–3) | Power ground | Dedicated low-impedance return path for high di/dt switch currents - separates power and analog grounds to prevent noise coupling into feedback loop. |
| VOUT (10) | Output voltage monitor | Direct connection to output rail for accurate sensing - supports remote sensing and eliminates IR drop error in DDR VDDQ distribution. |
| EN (17) | Enable input | 3.3-V logic compatible; active-high with 0.5 V/2 V thresholds - enables precise power sequencing with other DDR supply rails (VDD, VPP, VTT). |
| COMP (8) | Compensation node | Connects R-C-C network to VREF - sets loop bandwidth and phase margin for stable regulation with ceramic-only output capacitors. |
| VREF (7) | 2.0-V reference output | Stable internal reference with ±0.025 V tolerance at 50 µA load - serves as precision bias for REFIN divider and feedback circuitry. |
| REFIN (9) | Tracking reference input | Accepts 0.6–2.0 V external reference - enables VDDQ = ½ × VDD tracking for DDR3/DDR4 compliance without external op-amps. |
| PGOOD (19) | Open-drain status output | Asserts after soft-start and within ±8% of target VOUT - provides system-level power-good handshake for memory controller initialization. |
| MODE (18) | Operation mode select | Four threshold levels (80–470 mV, 1.8 V) configure SKIP/CCM, fSW = 600 kHz/1 MHz, and droop enable - no external resistors needed. |
Key Features
| Feature | Design Value |
|---|---|
| D-CAP+™ adaptive on-time control | Eliminates need for external compensation components and enables <10 µs load-step response - essential for DDR memory burst current demands. |
| Integrated high- and low-side MOSFETs | Reduces BOM count by 4–6 discrete FETs and drivers - simplifies layout and improves reliability in space-constrained DIMM or SoC modules. |
| Full 6-A bidirectional current capability | Supports simultaneous sourcing and sinking for DDR VDDQ termination - maintains bus voltage stability during read/write transitions. |
| Selectable SKIP or forced CCM mode | Enables >90% light-load efficiency (SKIP) or ultra-low-noise regulation (CCM) - adapts to dynamic DDR memory activity patterns. |
| External tracking with REFIN pin | Permits VDDQ = ½ × VDD implementation using single resistor divider - meets JEDEC DDR3/DDR4 specification for VDDQ tracking ratio. |
| Integrated bootstrap switch and UVLO | Removes need for external BST diode/resistor; V5IN UVLO at 4.37 V ensures gate drive integrity before enabling PWM - prevents shoot-through and brownout failure. |
Applications
| DDR Memory Termination | VTT Termination Regulator |
|---|---|
Use Scenario: Regulating VDDQ rail for DDR3/DDR4 SDRAM modules in servers, workstations, and networking equipment. IC Role / Device Role / Timing Role: Primary VDDQ buck regulator with bidirectional current delivery and tight ±1% output accuracy. Use Value: Ensures signal integrity and timing margin compliance by maintaining VDDQ within JEDEC-specified tolerance during 6-A burst loads. |
Use Scenario: Generating VTT (termination voltage) referenced to VDDQ in DDR3L/DDR4 systems with split-rail topology. IC Role / Device Role / Timing Role: Secondary buck converter configured in tracking mode to deliver VTT = ½ × VDDQ with matched transient response. Use Value: Eliminates need for separate VTT controller IC and reduces total solution size by reusing TPS53317RGBR's REFIN/VOUT architecture. |
| Low-Voltage Point-of-Load | Industrial Embedded DDR Systems |
Use Scenario: Providing 0.6–2.0 V POL regulation for FPGA I/O banks, ASIC core logic, or GPU memory interfaces. IC Role / Device Role / Timing Role: High-efficiency synchronous buck converter with programmable frequency and light-load SKIP mode. Use Value: Achieves >92% peak efficiency at 3 A and maintains >85% efficiency down to 10 mA - extends battery life in portable DDR-based devices. |
Use Scenario: Powering DDR memory in ruggedized industrial controllers, medical imaging systems, and transportation electronics. IC Role / Device Role / Timing Role: Industrial-grade DDR termination IC with –40°C to +85°C operation, thermal shutdown, and robust ESD protection (±2 kV HBM). Use Value: Guarantees reliable memory operation under thermal stress and electrical noise common in factory-floor or vehicle environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR memory termination applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS53353RGLR | Higher 12-A output rating; supports 3.3-V input minimum; adds PMBus interface and digital telemetry. | Targeted at DDR4/DDR5 server DIMMs requiring telemetry and higher current; larger 4-mm × 4-mm VQFN package. | Choose when system requires real-time current/voltage monitoring or >6-A VDDQ headroom for future-proofing. |
| ISL95812IRZ-T | 6-A DDR3/DDR3L VDDQ regulator with integrated LDO for VTT; fixed 1.5-MHz fSW; no REFIN tracking pin. | Designed for cost-sensitive client platforms; lacks external tracking and programmable mode selection. | Choose for simplified DDR3L notebook designs where VDDQ = 1.35 V fixed and VTT generation is integrated. |
Compared with TPS53317RGBR, TPS53353RGLR offers digital control and higher current but increases BOM complexity and cost, while ISL95812IRZ-T reduces feature set and flexibility to achieve lower unit price in volume consumer applications.
Availability
TPS53317RGBR is available at Aetrix Electronics and suitable for DDR memory termination, VTT regulation, and low-voltage point-of-load applications requiring stable component supply, industrial temperature range support, and long-term lifecycle availability.
Supply support for TPS53317RGBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-performance power conversion ICs.
The TPS53317RGBR belongs to TI's D-CAP+™ family of integrated-FET buck converters, engineered specifically for DDR memory subsystems requiring fast transient response, bidirectional current capability, and minimal external components.
FAQ
What is the maximum continuous output current capability of the TPS53317RGBR?
The TPS53317RGBR supports up to 6 A of continuous output current in both sourcing and sinking directions. This bidirectional capability is essential for DDR memory VDDQ termination, where the rail must absorb energy during memory read cycles and supply it during write cycles. The device maintains tight regulation across this full range, with valley overcurrent limits set at +7.6 A (positive) and –9.3 A (negative) to ensure safe operation under transient overload conditions. TPS53317RGBR achieves this using integrated high- and low-side MOSFETs with optimized RDS(on) and thermal design in its 3.5 mm × 4 mm VQFN package.
Does the TPS53317RGBR support external voltage tracking for DDR applications?
Yes, the TPS53317RGBR supports external tracking via its REFIN pin, which accepts an input voltage from 0.6 V to 2.0 V. When configured for tracking mode, the device regulates VOUT to match REFIN, enabling precise VDDQ = ½ × VDD implementations required by DDR3 and DDR4 standards. A minimum 260 µs delay between VREF reaching 2 V and applying REFIN ensures proper tracking initialization. This eliminates the need for external op-amps or discrete tracking circuits, reducing solution size and component count. TPS53317RGBR also supports non-tracking operation using a resistor divider from VREF to REFIN for fixed-output configurations.
What switching frequency options does the TPS53317RGBR offer, and how are they selected?
The TPS53317RGBR offers two selectable switching frequencies: 600 kHz and 1 MHz. Selection is controlled by the MODE pin voltage level, with four distinct thresholds (80 mV, 250 mV, 420 mV, and 1.8 V) configuring not only fSW but also operation mode (SKIP vs. forced CCM) and droop enable. For example, MODE = 250 mV selects 600 kHz with droop enabled, while MODE = 420 mV selects 1 MHz in forced CCM. This pin-strapping method eliminates external configuration resistors and simplifies PCB layout. TPS53317RGBR's D-CAP+™ architecture maintains stable operation across both frequencies without requiring loop compensation changes.
How does the TPS53317RGBR handle light-load efficiency optimization?
The TPS53317RGBR automatically enters pulse-skipping (SKIP) mode at light loads to maximize efficiency, reducing switching losses by lowering frequency and disabling low-side FET conduction when inductor current reaches zero. It also features ripple reduction in SKIP mode, which shortens on-time pulses to minimize output voltage ripple-critical when using all-MLCC output capacitors. Under heavier loads, it transitions seamlessly to forced continuous conduction mode (CCM) for low-noise, constant-frequency operation. This dual-mode behavior is selected via the MODE pin and enables TPS53317RGBR to sustain >85% efficiency from 10 mA to 6 A, making it ideal for DDR memory systems with highly dynamic current profiles.
What protection features are integrated into the TPS53317RGBR?
The TPS53317RGBR integrates comprehensive protection including overvoltage protection (OVP) triggered at 117–123% of VREFIN, undervoltage protection (UVP) at 65–71% of VREFIN with latch-off and soft-stop recovery, thermal shutdown at 145°C with 10°C hysteresis, and cycle-by-cycle valley overcurrent limiting (±9.3 A/±7.6 A). It also features V5IN UVLO (4.37 V) to ensure proper gate drive before enabling PWM, PGOOD with ±8% window and 1-ms propagation delay, and output soft-discharge via internal 42-Ω discharge FET. These features collectively safeguard both the TPS53317RGBR itself and downstream DDR memory components during fault events such as short circuits, overtemperature, or input brownouts.
TPS53317RGBR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- D-CAP+™
- Package/Case:
- 20-VFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Applications:
- Converter, DDR
- Voltage - Input:
- 1V ~ 6V
- Number of Outputs:
- 1
- Voltage - Output:
- 0.6V ~ 2V
- Operating Temperature:
- -40°C ~ 85°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 20-VQFN (3.5x4)
TPS53317RGBR FAQ
1.How can I place an order for TPS53317RGBR through Aetrix?
Please submit a Request for Quotation (RFQ) for TPS53317RGBR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPS53317RGBR reliable?
The price and inventory of TPS53317RGBR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPS53317RGBR is usually 5 days.
3.What payment methods are accepted for TPS53317RGBR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPS53317RGBR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPS53317RGBR?
TPS53317RGBR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPS53317RGBR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPS53317RGBR?
For technical support, including TPS53317RGBR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPS53317RGBR requirements.
6.How does Aetrix verify that TPS53317RGBR is sourced from the original manufacturer or authorized distributors?
All TPS53317RGBR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPS53317RGBR meets industry standards.
7.What is the process for return or replacement of TPS53317RGBR?
All TPS53317RGBR units undergo pre-shipment inspection (PSI). If there is an issue with TPS53317RGBR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPS53317RGBR part is unused and in its original packaging.
Return procedure for TPS53317RGBR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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