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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Special Purpose Regulators

Texas Instruments TPS53317RGBT

Name: TPS53317RGBT
Brand: Texas Instruments
SKU: TPS53317RGBT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TPS53317RGBT

Manufacturer:: Texas Instruments

Category:: Special Purpose Regulators

Package:: 20-VFQFN Exposed Pad

Datasheet:: TPS53317RGBT.pdf

Description:: IC REG CONV DDR 1OUT 20VQFN

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Product details

Overview

TPS53317RGBT from Texas Instruments is a 6-A synchronous step-down DC/DC converter with integrated high- and low-side MOSFETs, designed specifically for DDR memory VDDQ termination. It supports bidirectional current (±6 A), operates in D-CAP+™ adaptive on-time mode, delivers output voltage from 0.6 V to 2.0 V, and features selectable 600 kHz or 1 MHz switching frequency for DDR3L/DDR4 systems requiring tight regulation and fast transient response.

For engineers reviewing the TPS53317RGBT datasheet, TPS53317RGBT pinout, TPS53317RGBT application, or TPS53317RGBT equivalent, key selection considerations include its dual-sink/source capability for VTT/VDDQ rails, external tracking support for DDR voltage sequencing, integrated droop compensation, compatibility with all-MLCC output stages, and thermal performance in the 3.5 mm × 4 mm VQFN package with PowerPAD.

Technical Context

The TPS53317RGBT implements D-CAP+™ control architecture, where on-time is dynamically adjusted using both output voltage ripple and amplified current-sense feedback-enabling near-constant frequency operation without external compensation components. Its adaptive timing responds to VIN, VOUT, and load transients while maintaining stability across ceramic and SP/POSCAP output capacitors.

It integrates full-cycle 6-A sink capability with valley overcurrent limits of +7.6 A and –9.3 A, supports pre-bias startup, soft discharge, and programmable MODE pin logic for SKIP/forced CCM operation. Protection includes OVP (117–123% VREFIN), UVP (65–71% VREFIN), thermal shutdown at 145°C, and V5IN UVLO with 4.37 V threshold and 440 mV hysteresis.

Key Specifications

Parameter	Value and Actual Design Meaning
Output Current	±6 A continuous-supports DDR VDDQ sourcing and sinking during memory read/write cycles without rail collapse.
Input Voltage Range	1 V to 6 V-compatible with 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V system rails.
Output Voltage Range	0.6 V to 2.0 V-programmable via REFIN or resistor divider from internal 2.0-V reference.
Switching Frequency	Selectable 600 kHz or 1 MHz-enables trade-off between efficiency, size, and EMI in compact DDR power delivery.
Voltage Accuracy	±1% over temperature-ensures compliance with DDR3L (±1%) and DDR4 (±0.75%) VDDQ tolerance requirements.
Thermal Resistance	RθJA = 35.5°C/W-validated for 6-A operation in 85°C ambient with standard PCB copper area and PowerPAD soldering.
Protection Features	OVP/UVP latch-off, thermal shutdown with 10°C hysteresis, V5IN UVLO, and open-drain PGOOD with 8% hysteresis.

Pinout & Package

The TPS53317RGBT is housed in a 3.5 mm × 4 mm, 20-pin VQFN package with exposed thermal pad (PowerPAD) for enhanced thermal dissipation. Pin numbering follows top-view layout per SLUSAK4D Rev D.

Pin/Terminal	Circuit Role	Design Meaning
BST (Pin 16)	Bootstrap supply	Drives high-side FET gate; requires 0.1-µF capacitor to SW-enables 100% duty cycle capability and efficient gate drive.
SW (Pins 11–15)	Switching node	Multi-pin connection reduces parasitic inductance and improves thermal spreading for 6-A peak currents.
PGND (Pins 2–3)	Power ground	Dedicated low-impedance return path for high di/dt switching current-separated from analog GND to minimize noise coupling.
VOUT (Pin 10)	Output voltage monitor	Direct feedback input for precision regulation; supports external tracking and droop compensation networks.
VIN (Pin 4)	Main input supply	Accepts up to 6.0 V; powers internal circuitry and high-side driver-requires local 10-µF ceramic decoupling.
EN (Pin 17)	Enable control	3.3-V logic-compatible input; initiates soft-start sequence with 1.6-ms ramp and 260-µs internal delay.
COMP (Pin 8)	Loop compensation	Connects R-C-C network to VREF-enables stability tuning for varied output capacitance and ESR.
VREF (Pin 7)	Internal reference	2.0-V ±0.5% output; supplies REFIN divider and serves as accuracy anchor for VDDQ regulation.
REFIN (Pin 9)	Tracking reference	Accepts 0.6–2.0 V external voltage-configures output as half-tracking rail (e.g., VDDQ = ½ VDD) for DDR sequencing.
V5IN (Pin 20)	Analog supply	5-V dedicated rail for gate drivers and analog circuits; includes UVLO (4.37 V) and hysteresis (440 mV).
PGOOD (Pin 19)	Power status flag	Open-drain output asserting when VOUT is within ±8% of REFIN-delays 8 ms after startup and propagates faults within 1.2 ms.
MODE (Pin 18)	Operation mode select	Logic-level input selecting SKIP mode (light-load efficiency) or forced CCM (low-noise, constant frequency).
GND (Pin 6)	Analog ground	Reference for COMP, VREF, and internal error amplifier-must be star-connected to avoid noise injection.

Key Features

Feature	Design Value
D-CAP+™ adaptive on-time control	Eliminates external loop compensation components while delivering <10-µs transient response to 50% load steps in DDR applications.
Integrated MOSFETs with TI packaging	Low RDS(on) high-/low-side FETs in thermally enhanced VQFN reduce conduction losses and simplify layout for 6-A VDDQ rails.
Full ±6-A sink/source capability	Maintains VDDQ regulation during DDR burst reads (sink) and writes (source) without external discrete devices.
External tracking with pre-bias startup	Supports DDR3/DDR4 voltage sequencing (e.g., VDDQ tracks VDD) and starts safely into pre-charged output capacitors.
Selectable 600 kHz / 1 MHz switching	Enables optimization: 1 MHz for smaller magnetics in space-constrained DIMMs; 600 kHz for higher efficiency at full load.
All-MLCC output capacitor support	Stable with zero-ESR ceramic capacitors only-reduces board area, cost, and failure risk versus electrolytic/SP capacitors.

Applications

DDR Memory Termination	VTT Termination Regulator
Use Scenario: Providing tightly regulated 0.6–1.35 V VDDQ supply for DDR3L/DDR4 SDRAM modules in servers and networking equipment. IC Role / Device Role / Timing Role: Primary VDDQ regulator with bidirectional current handling, synchronized to memory controller timing via external tracking. Use Value: Meets DDR4 VDDQ ±0.75% tolerance and 10-mV p-p ripple spec using only MLCCs, eliminating need for secondary LDOs or discrete FETs.	Use Scenario: Generating matched VTT termination voltage (½ VDDQ) for DDR memory data bus in high-speed computing platforms. IC Role / Device Role / Timing Role: Secondary tracking regulator deriving VTT from VDDQ via REFIN-ensures precise 1:2 ratio and simultaneous power-up. Use Value: Achieves <±10 mV VTT tracking error across temperature and load, satisfying DDR4 VTT ±15 mV specification without calibration.
Low-Voltage POL for FPGA I/O	Industrial Embedded DDR Power
Use Scenario: Delivering 0.9–1.2 V at up to 6 A to FPGA I/O banks requiring fast transient response and low-noise operation. IC Role / Device Role / Timing Role: Point-of-load regulator with forced CCM mode-suppresses subharmonic noise that could interfere with high-speed SerDes links. Use Value: Maintains <1% output deviation during 4-A/µs load steps, enabling reliable operation of 28-Gbps transceivers without additional filtering.	Use Scenario: Powering DDR2/DDR3 subsystems in industrial HMIs, medical imaging controllers, and transportation ECUs operating from 12-V or 24-V intermediate rails. IC Role / Device Role / Timing Role: Robust VDDQ source with thermal shutdown (145°C), hiccup-mode fault recovery, and –40°C to 85°C guaranteed operation. Use Value: Delivers 92% peak efficiency at 3.3-V input/1.5-V output, reducing thermal load in sealed enclosures without active cooling.

DDR Memory Termination

VTT Termination Regulator

Use Scenario: Providing tightly regulated 0.6–1.35 V VDDQ supply for DDR3L/DDR4 SDRAM modules in servers and networking equipment.

IC Role / Device Role / Timing Role: Primary VDDQ regulator with bidirectional current handling, synchronized to memory controller timing via external tracking.

Use Value: Meets DDR4 VDDQ ±0.75% tolerance and 10-mV p-p ripple spec using only MLCCs, eliminating need for secondary LDOs or discrete FETs.

Use Scenario: Generating matched VTT termination voltage (½ VDDQ) for DDR memory data bus in high-speed computing platforms.

IC Role / Device Role / Timing Role: Secondary tracking regulator deriving VTT from VDDQ via REFIN-ensures precise 1:2 ratio and simultaneous power-up.

Use Value: Achieves <±10 mV VTT tracking error across temperature and load, satisfying DDR4 VTT ±15 mV specification without calibration.

Low-Voltage POL for FPGA I/O

Industrial Embedded DDR Power

Use Scenario: Delivering 0.9–1.2 V at up to 6 A to FPGA I/O banks requiring fast transient response and low-noise operation.

IC Role / Device Role / Timing Role: Point-of-load regulator with forced CCM mode-suppresses subharmonic noise that could interfere with high-speed SerDes links.

Use Value: Maintains <1% output deviation during 4-A/µs load steps, enabling reliable operation of 28-Gbps transceivers without additional filtering.

Use Scenario: Powering DDR2/DDR3 subsystems in industrial HMIs, medical imaging controllers, and transportation ECUs operating from 12-V or 24-V intermediate rails.

IC Role / Device Role / Timing Role: Robust VDDQ source with thermal shutdown (145°C), hiccup-mode fault recovery, and –40°C to 85°C guaranteed operation.

Use Value: Delivers 92% peak efficiency at 3.3-V input/1.5-V output, reducing thermal load in sealed enclosures without active cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR memory termination applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TPS53318RGFT	Same pinout and D-CAP+™ architecture but rated for 8-A continuous output; higher RDS(on) FETs increase conduction loss at 6-A.	Targeted at DDR4 LRDIMMs requiring >6-A VDDQ; over-spec for standard UDIMMs.	Choose TPS53318RGFT only if future-proofing for 8-A loads or LRDIMM designs-adds cost and thermal margin not needed for TPS53317RGBT's 6-A scope.
ISL95812IRZ	6-A DDR VDDQ regulator with similar tracking and sink/source capability but uses voltage-mode control and requires external compensation.	Designed for Intel VR12.5 platforms; lacks D-CAP+™'s zero-component loop stability and faster transient response.	Prefer ISL95812IRZ only in legacy Intel VR12.5 designs requiring pin-for-pin compatibility with prior ISL958xx family-otherwise TPS53317RGBT offers simpler design and better light-load efficiency.

Compared with TPS53317RGBT, the TPS53318RGFT provides headroom for higher-current DDR modules but increases BOM cost and thermal footprint unnecessarily for standard 6-A applications, while the ISL95812IRZ demands external compensation and delivers slower transient response-making TPS53317RGBT the optimal balance of integration, performance, and DDR-specific feature alignment.

Availability

TPS53317RGBT is available at Aetrix Electronics and suitable for DDR memory termination, VTT regulation, and FPGA I/O power delivery requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for TPS53317RGBT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of DDR power architecture expertise and broad automotive/industrial qualification.

The TPS53317RGBT belongs to TI's D-CAP+™ synchronous buck converter product line, engineered specifically for high-efficiency, low-noise DDR memory termination with integrated FETs, tracking capability, and robust protection for mission-critical computing systems.

FAQ

What is the maximum continuous output current rating for the TPS53317RGBT?

The TPS53317RGBT is rated for ±6 A continuous output current-supporting both sourcing and sinking simultaneously. This enables true bidirectional VDDQ regulation required by DDR3/DDR4 memory during read (sink) and write (source) operations. The device maintains regulation within ±1% accuracy across this full range under recommended operating conditions (–40°C to 85°C, proper PCB layout, and thermal management). Peak transient currents beyond 6 A are supported briefly due to valley OCL limits of +7.6 A and –9.3 A.

Does the TPS53317RGBT support external voltage tracking for DDR memory sequencing?

Yes, the TPS53317RGBT supports external tracking via the REFIN pin, which accepts an input voltage from 0.6 V to 2.0 V. When configured for tracking mode, the output voltage (VOUT) regulates to match REFIN-enabling precise VDDQ-to-VDD or VTT-to-VDDQ ratios required by DDR standards. A minimum 260-µs delay between VREF reaching 2 V and applying REFIN ensures correct tracking initialization, and the device supports pre-bias startup into already-charged output capacitors without damage or instability.

What package type and thermal characteristics does the TPS53317RGBT use?

The TPS53317RGBT uses a 3.5 mm × 4 mm, 20-pin VQFN package with an exposed thermal pad (PowerPAD). Its thermal resistance is RθJA = 35.5°C/W under standard JEDEC test conditions, and RθJB = 12.4°C/W when properly soldered to a 2-layer PCB with 1-in² copper area. This enables reliable 6-A operation at 85°C ambient temperature with minimal heatsinking-critical for dense DDR memory modules and embedded systems where airflow is limited.

Can the TPS53317RGBT operate with only ceramic output capacitors?

Yes, the TPS53317RGBT is explicitly designed to be stable with all-MLCC output capacitor configurations-no electrolytic, tantalum, or SP/POSCAP capacitors required. Its D-CAP+™ control architecture inherently compensates for zero-ESR ceramic capacitors, eliminating the need for external RC networks or damping resistors. This simplifies BOM, improves reliability, reduces board area, and meets DDR4 requirements for low-output-impedance, high-frequency decoupling.

How does the MODE pin configure operation modes on the TPS53317RGBT?

The MODE pin on the TPS53317RGBT selects between SKIP mode (for highest light-load efficiency) and forced continuous conduction mode (CCM) (for lowest output voltage ripple and predictable EMI). Logic thresholds are defined by VMODETH: Threshold 1 ≈130 mV (SKIP), Threshold 2 ≈250 mV (CCM), Threshold 3 ≈420 mV (SKIP), and Threshold 4 ≈1.8 V (CCM). External pull-up/down resistors set the desired mode-CCM is mandatory for external tracking applications to prevent output voltage droop during no-load conditions.

TPS53317RGBT Specifications

Product attributes: Attribute value

Manufacturer:: Texas Instruments

Series:: D-CAP+™

Package/Case:: 20-VFQFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Applications:: Converter, DDR

Voltage - Input:: 1V ~ 6V

Number of Outputs:: 1

Voltage - Output:: 0.6V ~ 2V

Operating Temperature:: -40°C ~ 85°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 20-VQFN (3.5x4)

TPS53317RGBT FAQ

1.How can I place an order for TPS53317RGBT through Aetrix?

Please submit a Request for Quotation (RFQ) for TPS53317RGBT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPS53317RGBT reliable?

The price and inventory of TPS53317RGBT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPS53317RGBT is usually 5 days.

3.What payment methods are accepted for TPS53317RGBT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPS53317RGBT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPS53317RGBT?

TPS53317RGBT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPS53317RGBT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPS53317RGBT?

For technical support, including TPS53317RGBT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPS53317RGBT requirements.

6.How does Aetrix verify that TPS53317RGBT is sourced from the original manufacturer or authorized distributors?

All TPS53317RGBT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPS53317RGBT meets industry standards.

7.What is the process for return or replacement of TPS53317RGBT?

All TPS53317RGBT units undergo pre-shipment inspection (PSI). If there is an issue with TPS53317RGBT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPS53317RGBT part is unused and in its original packaging.

Return procedure for TPS53317RGBT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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