Texas Instruments TPS562208DDCR

Overview

TPS562208DDCR from Texas Instruments is a 2A synchronous step-down DC/DC converter in SOT-23-6 (DDC) package, featuring D-CAP2™ control, 580kHz fixed switching frequency, continuous conduction mode (FCCM), and integrated 140mΩ high-side and 84mΩ low-side MOSFETs. It delivers regulated output voltages from 0.76V to 7V across 4.5V–17V input range for compact power rails in digital consumer electronics.

For engineers reviewing the TPS562208DDCR datasheet, TPS562208DDCR pinout, TPS562208DDCR application, or TPS562208DDCR equivalent, key selection criteria include FCCM operation for stable light-load regulation, 2% VFB accuracy at 25°C, 1.0ms internal soft-start, hiccup-mode overcurrent protection, and compatibility with low-ESR ceramic output capacitors without external compensation.

Technical Context

The TPS562208DDCR implements a proprietary D-CAP2™ adaptive on-time control architecture that enables fast transient response and stability with multi-layer ceramic capacitors-eliminating need for external compensation networks. Its internal PWM logic uses VIN- and VOUT-dependent one-shot timing to maintain quasi-fixed 580kHz operation under CCM while supporting line/load regulation within ±2% over –40°C to 125°C junction temperature.

Unlike the pulse-skip TPS562201 variant, the TPS562208DDCR operates exclusively in forced continuous conduction mode (FCCM), ensuring consistent switching frequency and predictable EMI behavior across full 0–2A load range. Protection features include cycle-by-cycle overcurrent limiting (2.4–4.0A threshold), non-latching thermal shutdown (160°C), and undervoltage lockout (3.3–4.3V).

Key Specifications

Pinout & Package

SOT-23-6 (DDC) package, 1.6mm × 2.9mm footprint, thermally enhanced with exposed pad (not electrically connected). Pin 1 = GND, Pin 2 = SW, Pin 3 = VIN, Pin 4 = VFB, Pin 5 = EN, Pin 6 = VBST.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous buck regulator applications.

Compared with TPS562201DDCR, the TPS562208DDCR provides deterministic FCCM operation essential for EMI-controlled environments; versus MP2307DN-LF-Z, it delivers plug-and-play stability with ceramic capacitors and simpler layout-reducing time-to-market for consumer-grade power designs.

Availability

TPS562208DDCR is available at Aetrix Electronics and suitable for digital TV power supply, high definition Blu-ray™ disc player, and networking home terminal applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TPS562208DDCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power conversion solutions.

The TPS56220x product line was designed specifically for space-constrained consumer electronics requiring simple, efficient, and robust 2A DC/DC conversion-emphasizing ease of use, minimal external components, and compatibility with low-ESR ceramic capacitors.

FAQ

What is the primary difference between TPS562208DDCR and TPS562201DDCR?

The TPS562208DDCR operates exclusively in forced continuous conduction mode (FCCM), maintaining a steady 580kHz switching frequency across all loads. In contrast, the TPS562201DDCR uses pulse-skip Eco-mode at light loads, reducing frequency to improve efficiency but increasing output ripple and EMI unpredictability. Both share identical pinout, package, and D-CAP2™ control architecture, but FCCM makes TPS562208DDCR preferable for noise-sensitive applications like video processing where consistent frequency simplifies EMI filtering.

Does TPS562208DDCR support startup into a prebiased output?

Yes, the TPS562208DDCR supports prebiased output startup. When the EN pin is asserted high and the VFB voltage exceeds the internal 0.768V reference, the device delays switching until the internal soft-start ramp surpasses the present VFB level-preventing reverse current flow through the low-side FET and avoiding output voltage collapse. This feature is confirmed in Section 6.3.3 of the official datasheet and enables safe integration into systems with hold-up capacitors or hot-swap architectures.

What is the recommended bootstrap capacitor for TPS562208DDCR?

The TPS562208DDCR requires a 0.1µF ceramic capacitor connected between the VBST and SW pins. Texas Instruments specifies X7R or better dielectric with ≤2mm lead length to minimize parasitic inductance. This capacitor supplies gate drive energy for the high-side MOSFET during each switching cycle and must be placed as close as possible to the VBST/SW pins. Failure to use this capacitor-or using a value significantly outside 0.08–0.12µF-will cause erratic operation or complete failure to regulate.

Can TPS562208DDCR achieve 90%+ efficiency at 12V input and 3.3V/2A output?

Yes, the TPS562208DDCR achieves ≥92% typical efficiency at VIN=12V, VOUT=3.3V, and IOUT=2A, as verified in Figure 5-17 of the datasheet. This performance relies on the integrated 140mΩ/84mΩ FET pair, optimized D-CAP2™ control minimizing switching losses, and proper implementation of recommended 3.3µH inductor and 44µF total ceramic output capacitance. Efficiency drops to ~85% at 1.05V/2A due to fixed gate-drive and conduction losses dominating at low VOUT.

What protection features does TPS562208DDCR include?

The TPS562208DDCR integrates cycle-by-cycle overcurrent limiting (2.4–4.0A threshold), hiccup-mode fault recovery, non-latching thermal shutdown (160°C), non-latching output undervoltage protection (65% of nominal VOUT), and input UVLO (3.3–4.3V). All protections are fully autonomous-no external components required-and operate independently of the control loop. These features are documented in Sections 5.5 and 6.3.4–6.3.6 of the SLVSD91D datasheet and validated across –40°C to 125°C junction temperature.