Texas Instruments TPS61170DRVT

Overview

TPS61170DRVT from Texas Instruments is a monolithic high-voltage boost converter IC with integrated 1.2-A, 40-V N-channel MOSFET, operating at 1.2 MHz fixed frequency to generate up to 38 V output from 3–18 V input. It delivers 12 V at 300 mA and 24 V at 150 mA from a 5-V source with up to 93% efficiency, used in compact DC-DC power supplies for industrial sensors and portable instrumentation.

For engineers reviewing the TPS61170DRVT datasheet, TPS61170DRVT pinout, TPS61170DRVT application, or TPS61170DRVT equivalent, key selection considerations include its 2-mm × 2-mm QFN package, on-the-fly FB reference reprogramming via PWM or EasyScale™, skip-cycle light-load regulation, built-in soft start, and current-mode control architecture requiring external RC compensation.

Technical Context

The TPS61170DRVT implements current-mode PWM control with fixed 1.2-MHz oscillator and slope-compensated ramp generation to prevent subharmonic oscillation above 50% duty cycle. Its error amplifier (transconductance 240–400 μmho, crossover ~500 kHz) drives the COMP pin, requiring external RC network for loop stability and transient response optimization.

Feedback regulation targets 1.229 V at FB (±25 mV tolerance), programmable down to 492 mV via CTRL pin using either PWM duty-cycle modulation or 1-wire EasyScale™ protocol (32-step resolution). The device integrates pulse-by-pulse overcurrent protection (1.2 A typical limit), thermal shutdown at 160°C (15°C hysteresis), and undervoltage lockout at 2.5 V nominal with 70-mV hysteresis.

Key Specifications

Pinout & Package

The TPS61170DRVT is housed in a thermally enhanced 6-pin VSON (DRVT) package measuring 2.00 mm × 2.00 mm with exposed thermal pad. The pad must be soldered to the PCB ground plane using thermal vias for reliable power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage boost converter applications.

Compared with TPS61088RHLR and LT3467EDD#TRPBF, the TPS61170DRVT uniquely combines 38-V output capability, 1.2-MHz fixed-frequency operation in a 2-mm × 2-mm QFN, and dual-mode (PWM/EasyScale™) on-the-fly FB reprogramming-making it optimal for space-constrained, dynamically adjustable high-voltage power rails.

Availability

TPS61170DRVT is available at Aetrix Electronics and suitable for industrial sensor excitation, portable instrumentation power, ADSL line driver supply, and SEPIC-based buck-boost regulation requiring stable component supply and long-term production continuity.

Supply support for TPS61170DRVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power conversion ICs.

The TPS61170DRVT belongs to TI's high-voltage boost converter product line, designed specifically for compact, efficient DC-DC solutions in space-constrained industrial, test & measurement, and communications equipment where programmable output and thermal robustness are essential.

FAQ

What is the maximum output voltage supported by the TPS61170DRVT?

The TPS61170DRVT supports output voltages up to 38 V, enabled by its integrated 40-V rated N-channel MOSFET and current-mode control architecture. This allows direct generation of high-bias rails for sensors, LEDs, or line drivers without external voltage boosting stages. The actual achievable output depends on input voltage, inductor value, and load current-but the IC's internal switch and protection circuits are rated for continuous operation at this level. Always verify layout and external component ratings for sustained 38-V operation.

How does the CTRL pin function in the TPS61170DRVT?

The CTRL pin on the TPS61170DRVT serves three roles: enabling/disabling the device, accepting PWM signals to proportionally reduce the FB reference voltage (V_FB = Duty × 1.229 V), and hosting the EasyScale™ 1-wire interface for 32-step digital programming. When left floating, its internal 800-kΩ pulldown resistor disables the IC. For reprogramming, a valid PWM signal (5–100 kHz) or EasyScale™ command sequence must be applied after startup. The pin's logic thresholds are V_CTRLH = 1.2 V (min) and V_CTRLL = 0.4 V (max), with 2.5-ms low assertion required for shutdown.

What compensation components are required for stable operation of the TPS61170DRVT?

The TPS61170DRVT requires an external RC network connected between COMP and GND to stabilize the feedback loop. Typical values-such as R3 = 4.99 kΩ and C3 = 10 nF as shown in the datasheet's Figure 1-set dominant pole and zero locations to ensure phase margin >45° across load and input variations. The error amplifier's transconductance (240–400 μmho) and output resistance (~6 MΩ) interact with this network to define crossover frequency (~500 kHz). TI recommends verifying compensation using load transient testing and Bode plot analysis with bench equipment before finalizing the design.

Does the TPS61170DRVT support SEPIC topology, and what modifications are needed?

Yes, the TPS61170DRVT supports SEPIC topology per its datasheet description and functional block diagram. To implement SEPIC, replace the standard boost diode with a second capacitor (C_SEPIC) connected between SW and the output rail, and add a coupling capacitor in series with the inductor. The IC's current-mode control and 40-V switch rating accommodate the bidirectional energy transfer inherent to SEPIC. No internal configuration changes are required-the same COMP compensation and FB divider apply. Refer to TI's TPS61170 application report SLVA512 for validated component selection and layout guidelines.

What thermal management practices are mandatory for the TPS61170DRVT?

The TPS61170DRVT requires soldering its exposed thermal pad directly to a solid copper ground plane with ≥4 thermal vias (0.3-mm diameter, filled or plated) connecting to inner/ground layers. This achieves the specified R_θJA = 66.5 °C/W and prevents junction temperatures exceeding 125°C under full load. Without proper thermal relief, power dissipation causes premature thermal shutdown or accelerated aging. The datasheet specifies R_θJC(bot) = 7.1 °C/W-confirming that heat flows primarily through the bottom pad, not the top surface. Avoid covering the pad with solder mask or silkscreen.