Texas Instruments TPS61256CYFFT

Overview

TPS61256CYFFT from Texas Instruments is a synchronous step-up DC-DC converter in NanoFree™ DSBGA packaging, delivering fixed 5.0 V output at up to 800 mA from input voltages as low as 2.3 V. It operates at 3.5 MHz with 93% peak efficiency, 37 µA quiescent current in PFM mode, and ±2% DC output voltage accuracy-designed for NFC power amplifier supply and compact Li-ion–powered mobile devices.

For engineers reviewing the TPS61256CYFFT datasheet, TPS61256CYFFT pinout, TPS61256CYFFT application, or TPS61256CYFFT equivalent, key selection considerations include its pass-through mode operation (EN = low), 9-pin DSBGA package footprint (1.206 mm × 1.306 mm), thermal shutdown at 140°C, and support for ultra-small total solution size (<25 mm²) with only three external components.

Technical Context

The TPS61256CYFFT uses valley-current-mode control with adaptive slope compensation and quasi-constant on-time PWM at moderate-to-heavy loads, transitioning to PFM at light loads to sustain high efficiency across 0.1–800 mA. Its architecture enables seamless transition between true boost and VIN ≥ VOUT pass-through modes without external circuitry.

Internal soft-start, undervoltage lockout (2.0 V threshold, 100 mV hysteresis), and thermal regulation (110°C active current limiting, 140°C shutdown) are integrated. The device features dual MOSFETs (170 mΩ high-side, 100 mΩ low-side) and supports inductor values from 0.7 µH to 2.9 µH with 10–50 µF ceramic output capacitance.

Key Specifications

Pinout & Package

TPS61256CYFFT is housed in a 9-bump DSBGA (NanoFree™) package measuring 1.206 mm × 1.306 mm with 0.4-mm pitch. The package uses face-down chip-scale construction with solder bumps replacing wire bonds, optimized for minimal PCB area and thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar step-up converter applications.

Compared with TPS61256CYFFT, TPS61252YFFT offers identical form factor but lower output voltage and current, while MT9700-5.0TR trades miniaturization and advanced features for simpler implementation and wider availability - making TPS61256CYFFT optimal for space-constrained, high-efficiency 5 V boost applications requiring dynamic mode switching.

Availability

TPS61256CYFFT is available at Aetrix Electronics and suitable for NFC power amplifiers, smartphone camera flash subsystems, and USB-C power path management requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for TPS61256CYFFT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-efficiency DC-DC conversion.

The TPS61256xC family was engineered specifically for ultra-compact, battery-powered mobile devices - prioritizing minimal solution size, dynamic mode flexibility (boost + pass-through), and extended runtime via ultra-low quiescent current.

FAQ

What is the recommended inductor value for TPS61256CYFFT in a 5 V/800 mA application?

The TPS61256CYFFT is optimized for 1.0 µH inductors (e.g., Murata LQM32PN1R0MG0) with saturation current ≥1.8 A. Inductor values between 0.7 µH and 2.9 µH are supported, but 1.0 µH delivers best balance of transient response, efficiency, and size. Using 1.0 µH with 10 µF output capacitance ensures stable loop compensation per TI's reference design for TPS61256CYFFT.

Does TPS61256CYFFT support true pass-through mode, and how does it behave when EN is pulled low?

Yes - when EN is pulled low and VIN exceeds UVLO (≥2.1 V), TPS61256CYFFT enters forced pass-through mode: the output follows VIN with a dropout determined by inductor DCR and high-side FET r_DS(on) (typically <500 mV at 500 mA). This mode draws only 11–20 µA quiescent current and requires no switching action - ideal for USB power-path redundancy in TPS61256CYFFT designs.

What is the maximum junction temperature and thermal protection behavior of TPS61256CYFFT?

The TPS61256CYFFT includes two thermal protections: active current derating begins at 110°C (reducing output current to prevent further rise), and hard thermal shutdown triggers at 140°C (typical), disabling both MOSFETs until junction temperature falls below 120°C. These functions are fully integrated - no external components required - and are validated across the –40°C to 85°C ambient range specified for TPS61256CYFFT.

Can TPS61256CYFFT operate with input voltage higher than its 5.0 V output voltage?

Yes - TPS61256CYFFT explicitly supports VIN ≥ VOUT operation via its pass-through mode (EN = low) and zero-duty-cycle boost transition. When VIN rises above 5.0 V, the controller automatically reduces duty cycle to maintain regulation, allowing seamless operation from 2.3 V to 5.5 V input without external supervision - a key differentiator confirmed in the TPS61256CYFFT datasheet Section 9.1 and Figure 3.

What are the PCB layout recommendations specific to the DSBGA package of TPS61256CYFFT?

For the 9-bump DSBGA (YFF) package of TPS61256CYFFT, TI recommends: (1) solid thermal pad under the die connected to GND with ≥4 thermal vias (0.3 mm diameter, 0.6 mm pitch); (2) SW and VOUT traces as short/wide as possible with minimized loop area; (3) input/output capacitors placed within 2 mm of respective pins; and (4) no solder mask defined (SMD) openings on bumps - standard solder paste stencil (100 µm thick, 1:1 aperture ratio) ensures reliable reflow for TPS61256CYFFT.