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Texas Instruments TPS650243RHBT
- Part No.:
- TPS650243RHBT
- Manufacturer:
- Texas Instruments
- Category:
- Battery Management
- Package:
- 32-VFQFN Exposed Pad
- Datasheet:
-
TPS650243RHBT.pdf
- Description:
- IC BAT PWR MGMT LI-ION 1C 32VQFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,510
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Product details
Overview
TPS650243RHBT from Texas Instruments is a highly integrated power management IC (PMIC) for single-cell Li-ion/Li-polymer systems, delivering three synchronous step-down converters (1.6 A / 1.0 A / 0.8 A), two 200 mA general-purpose LDOs, and one 30 mA always-on LDO (Vdd_alive). It supports dynamic voltage scaling on the core rail (DCDC3: 1.0 V or 1.2 V) and operates across –40°C to +85°C ambient.
For engineers reviewing the TPS650243RHBT datasheet, TPS650243RHBT pinout, TPS650243RHBT application, or TPS650243RHBT equivalent, key selection criteria include its 2.25 MHz switching frequency, 85 µA quiescent current in PFM mode, split-rail output capability (I/O, memory, core), and VQFN-32 (5 mm × 5 mm) package with thermal pad - all critical for space-constrained portable electronics design.
Technical Context
The TPS650243RHBT integrates three independent buck converters with internal P/N-channel MOSFETs, each featuring soft-start (750 µs), adjustable output via resistor dividers or fixed-voltage selection pins (DEFDCDC1–3), and selectable PWM/PFM operation via the MODE pin. DCDC1 supplies system I/O (3.3 V or 2.8 V), DCDC2 powers memory (1.8 V or 2.5 V), and DCDC3 delivers processor core voltage (1.0 V or 1.2 V).
It includes dual 200 mA LDOs (VLDO1/VLDO2) with external feedback (FB_LDO1/FB_LDO2), a dedicated 30 mA Vdd_alive LDO, power-fail detection (PWRFAIL_SNS → open-drain PWRFAIL), and comprehensive protection: thermal shutdown (160°C), UVLO (2.35 V), and overcurrent limiting on all DC-DC stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| DCDC1 Output Current | 1.6 A - sufficient for high-current I/O rails (e.g., SDIO, USB PHY, display interface) |
| DCDC2 Output Current | 1.0 A - supports DDR memory subsystems requiring stable 1.8 V/2.5 V at up to 1 A |
| DCDC3 Output Voltage | 1.0 V / 1.2 V (selectable via DEFDCDC3) - matches ARM Cortex-A8/A9 core voltage requirements |
| Switching Frequency | 2.25 MHz (±15%) - enables use of compact 2.2 µH inductors and low-ESR ceramic capacitors |
| Quiescent Current | 85 µA (PFM, all DC-DC enabled, LDOs off) - extends battery life in standby/sleep modes |
| LDO Output Accuracy | ±2% (VLDO1/VLDO2), ±1% (Vdd_alive) - ensures reliable biasing of analog/RTC circuits |
| Operating Temp Range | –40°C to +85°C - qualified for industrial and consumer handheld applications |
Pinout & Package
TPS650243RHBT is housed in a thermally enhanced 32-pin VQFN package (5.0 mm × 5.0 mm, 0.5 mm pitch) with an exposed PowerPad connected to AGND for optimal thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDCDC3 | Feedback input for core converter | Direct connection to DCDC3 output enables precise regulation of 1.0 V/1.2 V core rail |
| DEFDCDC3 | Core voltage select input | Logic LOW = 1.0 V, HIGH = 1.2 V - enables dynamic voltage scaling without firmware changes |
| EN_DCDC1/2/3 | Individual enable inputs | Independent control allows sequenced power-up/down of I/O, memory, and core domains |
| VLDO1 / VLDO2 | LDO output terminals | Each delivers up to 200 mA with externally adjustable voltage (1.0–3.3 V) via FB_LDO1/FB_LDO2 |
| Vdd_alive | Always-on LDO output | Provides 1.2 V @ 30 mA for RTC, wake-up logic, or backup registers during deep sleep |
| PWRFAIL_SNS | Battery monitor input | Triggers open-drain PWRFAIL when VBAT drops below 1.0 V ±2%, enabling graceful shutdown |
Key Features
| Feature | Design Value |
|---|---|
| Three independent buck converters | Enables full power domain isolation: I/O (DCDC1), memory (DCDC2), core (DCDC3) - simplifies sequencing and fault containment |
| Dynamic core voltage scaling | DEFDCDC3 pin selects 1.0 V or 1.2 V output - reduces dynamic power by ~20% when CPU load is low |
| Ultra-low quiescent current | 85 µA in PFM mode with all DC-DCs active - extends battery runtime in idle states without sacrificing responsiveness |
| Dual 200 mA programmable LDOs | FB_LDO1/FB_LDO2 allow custom output voltages (1.0–3.3 V) - eliminates need for external regulators in mixed-voltage SoC interfaces |
| Integrated power-fail detection | PWRFAIL_SNS + PWRFAIL provides hardware-level brownout warning - prevents data corruption during battery depletion |
Applications
| Smartphone Application | Tablet System Power |
|---|---|
Use Scenario: Single-cell Li-ion powered smartphone with ARM-based application processor, LPDDR2 memory, and multi-function peripherals. IC Role / Device Role / Timing Role: Central PMIC managing all major power domains: DCDC1 (3.3 V I/O), DCDC2 (1.8 V memory), DCDC3 (1.2 V core), plus VLDO1/VLDO2 for camera/audio bias. Use Value: Reduces BOM count by integrating 3 buck converters + 3 LDOs in one 5×5 mm package, while enabling adaptive core voltage scaling to cut CPU power by up to 20%. | Use Scenario: 7-inch tablet with quad-core Cortex-A9, eMMC storage, and touch controller requiring multiple regulated rails. IC Role / Device Role / Timing Role: Primary power source delivering sequenced startup: Vdd_alive first, then DCDC3 (core), followed by DCDC1 (I/O) and DCDC2 (memory). Use Value: Independent EN_DCDCx pins and soft-start (750 µs) ensure clean, glitch-free power sequencing - eliminating reset issues during cold boot. |
| GPS Navigation Device | Digital Camera Module |
Use Scenario: Portable automotive GPS unit with SiRFstar IV chipset, OLED display, and GNSS antenna LNA. IC Role / Device Role / Timing Role: Supplies 1.2 V core to GPS SoC, 3.3 V to display driver and RF front-end, and 1.8 V to SD card interface. Use Value: 2.25 MHz switching frequency minimizes EMI near sensitive GNSS bands; PFM mode extends battery life during map rendering pauses. | Use Scenario: Compact digital camera with CMOS image sensor, ISP, and SD card host controller. IC Role / Device Role / Timing Role: Powers sensor analog block (VLDO1), digital ISP core (DCDC3), memory interface (DCDC2), and lens actuator (VLDO2). Use Value: Dual 200 mA LDOs support sensor-specific bias voltages (e.g., 2.8 V AVDD, 1.8 V DVDD); thermal shutdown (160°C) protects against overheating during continuous video capture. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power management IC applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS650241RHBT | DCDC3 outputs 0.9 V / 1.375 V; DCDC1/DCDC2 rated for 1.6 A / 1.0 A; same package and pinout | Optimized for lower-voltage, higher-efficiency ARM cores (e.g., Cortex-M4) requiring sub-1.0 V operation | Select when target SoC specifies 0.9 V core voltage and requires tighter DCDC3 accuracy (±1% vs. ±2% for TPS650243RHBT) |
| TPS650244RHBT | DCDC3 outputs 1.55 V / 1.6 V; DCDC2 rated for 1.6 A; DCDC1 rated for 0.8 A; identical pinout and package | Suited for legacy DSPs or FPGAs needing higher core/memory voltages (e.g., 1.6 V I/O, 1.55 V core) | Choose for designs using TI C6000 DSPs or Xilinx Spartan-6 FPGAs where 1.55–1.6 V core rails are mandatory |
Compared with TPS650241RHBT and TPS650244RHBT, the TPS650243RHBT offers a balanced 1.0 V / 1.2 V core option ideal for mid-tier ARM Cortex-A8/A9 processors - providing better efficiency than 1.55 V variants and higher noise margin than 0.9 V variants, without requiring PCB redesign.
Availability
TPS650243RHBT is available at Aetrix Electronics and suitable for smartphone, tablet, GPS navigation, and digital camera applications requiring stable component supply, long-term lifecycle support, and production-ready qualification.
Supply support for TPS650243RHBT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in battery-powered system solutions.
The TPS65024x product line was designed specifically for Li-ion/Li-polymer powered portable electronics, integrating multiple DC-DC and LDO regulators into a single compact package to minimize footprint and simplify power architecture.
FAQ
What is the core output voltage configuration for TPS650243RHBT?
The TPS650243RHBT provides a selectable core output voltage on DCDC3: 1.0 V when DEFDCDC3 is logic LOW, and 1.2 V when DEFDCDC3 is logic HIGH. This dual-voltage capability supports dynamic voltage scaling for ARM-based processors, allowing real-time trade-offs between performance and power consumption without changing hardware. The TPS650243RHBT does not support other core voltages - only these two fixed points.
Does TPS650243RHBT support I²C or other digital control interfaces?
No, the TPS650243RHBT does not include I²C, SPI, or any digital communication interface. It is a hardware-configured PMIC: voltage levels are set via external resistor dividers (for adjustable outputs) or logic pins (DEFDCDC1–3), and sequencing is controlled by individual enable signals (EN_DCDC1/2/3, EN_LDO, EN_Vdd_alive). All configuration is static at power-up - no firmware or register programming is required or supported for the TPS650243RHBT.
What is the maximum output current capability of the LDOs in TPS650243RHBT?
The TPS650243RHBT integrates two 200 mA general-purpose LDOs (VLDO1 and VLDO2) and one 30 mA always-on LDO (Vdd_alive). Each VLDO delivers up to 200 mA with ±2% output accuracy and dropout as low as 120 mV at 50 mA. Their input range is 1.5 V to 6.5 V, allowing direct connection to battery or a DC-DC output. The TPS650243RHBT's LDOs do not share current - each operates independently with its own enable and feedback path.
How does the MODE pin affect efficiency in TPS650243RHBT?
The MODE pin on the TPS650243RHBT selects between automatic PFM/PWM operation (MODE = LOW) and forced PWM mode (MODE = HIGH). In PFM mode, the TPS650243RHBT achieves 85 µA quiescent current and >85% efficiency down to 100 µA loads; in forced PWM, efficiency drops below 10 mA but ripple is reduced and transient response improves. This dual-mode capability lets designers optimize for battery life (PFM) or signal integrity (PWM) per rail - a feature confirmed in the TPS650243RHBT datasheet Section 9.4.
Is thermal management supported in TPS650243RHBT?
Yes, the TPS650243RHBT includes integrated thermal shutdown protection that activates at 160°C junction temperature, with 20°C hysteresis to prevent oscillation. Its VQFN-32 package features an exposed PowerPad that must be soldered to a thermal pad on the PCB for effective heat dissipation. The datasheet specifies RθJA = 32.2°C/W and RθJB = 6.2°C/W - confirming the TPS650243RHBT is designed for conduction-cooled handheld applications where airflow is limited and board-level thermal design is critical.
TPS650243RHBT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 32-VFQFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Function:
- Power Management
- Battery Chemistry:
- Lithium Ion/Polymer
- Number of Cells:
- 1
- Fault Protection:
- Over Temperature, Under Voltage
- Interface:
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 32-VQFN (5x5)
TPS650243RHBT FAQ
1.How can I place an order for TPS650243RHBT through Aetrix?
Please submit a Request for Quotation (RFQ) for TPS650243RHBT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPS650243RHBT reliable?
The price and inventory of TPS650243RHBT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPS650243RHBT is usually 5 days.
3.What payment methods are accepted for TPS650243RHBT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPS650243RHBT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPS650243RHBT?
TPS650243RHBT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPS650243RHBT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPS650243RHBT?
For technical support, including TPS650243RHBT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPS650243RHBT requirements.
6.How does Aetrix verify that TPS650243RHBT is sourced from the original manufacturer or authorized distributors?
All TPS650243RHBT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPS650243RHBT meets industry standards.
7.What is the process for return or replacement of TPS650243RHBT?
All TPS650243RHBT units undergo pre-shipment inspection (PSI). If there is an issue with TPS650243RHBT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPS650243RHBT part is unused and in its original packaging.
Return procedure for TPS650243RHBT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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