Texas Instruments TPS65130RGETG4

Overview

TPS65130RGETG4 from Texas Instruments is a dual-output DC-DC converter IC generating independent positive (up to +15 V) and negative (down to –15 V) rails from a 2.7–5.5 V input, with 800 mA switch current limit per channel, 1.25–1.5 MHz fixed-frequency PWM control, and 1-µA shutdown current. It serves as a compact split-rail power supply for LCD/AMOLED display bias in portable industrial HMIs.

For engineers reviewing the TPS65130RGETG4 datasheet, TPS65130RGETG4 pinout, TPS65130RGETG4 application, or TPS65130RGETG4 equivalent, key selection criteria include independent enable sequencing, integrated overvoltage/thermal protection, ±1.213 V feedback reference accuracy, and VQFN-24 package compatibility with high-density PCB layouts.

Technical Context

The TPS65130RGETG4 integrates two independent switching regulators: a synchronous boost converter (VPOS) and an inverting buck-boost converter (VNEG), sharing only a common oscillator and 1.213 V internal reference. Each employs fixed-frequency PWM with pulse-skipping in power-save mode at light loads.

It features separate enable (ENP/ENN) and power-save mode (PSP/PSN) inputs, dedicated compensation pins (CP/CN), and output disconnect capability via BSW-controlled external P-channel FET. Protection includes overvoltage on both outputs, input UVLO (2.1–2.7 V), and thermal shutdown (150 °C).

Key Specifications

Pinout & Package

TPS65130RGETG4 is housed in a thermally enhanced 4.0 mm × 4.0 mm VQFN-24 package (RGE) with exposed thermal pad for efficient heat dissipation in space-constrained applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-output DC-DC converter applications.

Compared with TPS65130RGETG4, TPS65131RGET offers double the current capability in the same footprint but increases quiescent current by 20%; MAX17504ATJ+ supports wider input range but lacks integrated sequencing and requires more external components for dual-rail operation.

Availability

TPS65130RGETG4 is available at Aetrix Electronics and suitable for industrial HMI, portable medical devices, and AMOLED display bias applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TPS65130RGETG4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability electronic components.

The TPS6513x product line was designed specifically for compact, high-efficiency dual-rail power conversion in portable display systems - targeting LCD, AMOLED, and segmented display bias applications with stringent size and thermal constraints.

FAQ

What is the maximum output current capability of the TPS65130RGETG4 on each rail?

The TPS65130RGETG4 provides a nominal 800 mA switch current limit for both the VPOS boost and VNEG inverting converters. Under typical conditions (VIN = 3.6 V, VPOS = 8 V, VNEG = –5 V), maximum continuous output current ranges from 200 mA to 500 mA depending on input-to-output voltage ratio and thermal conditions. The TPS65130RGETG4 datasheet specifies ILIMP and ILIMN as 700–900 mA, confirming its 800 mA rating per channel.

Does the TPS65130RGETG4 support independent power sequencing between positive and negative outputs?

Yes, the TPS65130RGETG4 supports full independent sequencing via dedicated enable pins ENP (for VPOS) and ENN (for VNEG). Applying logic-high to ENP activates only the positive rail, while ENN controls the negative rail separately. This allows precise timing control - such as powering VNEG before VPOS to prevent display latch-up - without requiring external logic or timers.

Can the TPS65130RGETG4 generate exactly ±12 V outputs?

Yes, the TPS65130RGETG4 can generate precisely ±12 V using external resistor dividers on FBP and FBN. For VPOS = +12 V, set R1 = 887 kΩ and R2 = 100 kΩ (yielding 1.213 V at FBP); for VNEG = –12 V, use R3 = 1 MΩ and R4 = 102 kΩ referenced to VREF. The 1.213 V internal reference and ±0.024 V feedback error ensure ≤±3% total DC accuracy across temperature and load.

What package type and thermal characteristics does the TPS65130RGETG4 use?

The TPS65130RGETG4 uses a 4.0 mm × 4.0 mm VQFN-24 package (RGE) with exposed thermal pad. Its junction-to-board thermal resistance (RθJB) is 12.2 °C/W, and junction-to-ambient (RθJA) is 34.1 °C/W. These values enable reliable operation up to 85 °C ambient when mounted on a 2-layer PCB with ≥2 in² copper pour connected to the thermal pad.

How does the TPS65130RGETG4 handle battery disconnection during shutdown?

The TPS65130RGETG4 provides battery disconnect capability via its BSW pin, which drives the gate of an external P-channel FET placed between the input source and the boost converter's INP node. When ENP = low, BSW goes low, turning off the FET and eliminating the DC path through the boost inductor and diode - reducing battery leakage to <1 µA in shutdown mode.