Texas Instruments TPS65510RGTT

Overview

TPS65510RGTT from Texas Instruments is a low-power battery backup IC with integrated boost converter and power-path switching for RTC power management. It features four LDOs (1.2 V, 1.8 V, dual 3.3 V), dual open-drain status indicators (CS, XRESET), and operates across –35°C to 85°C in a 3 mm × 3 mm QFN-16 package. It automatically selects main or backup battery based on VO_BT voltage level for real-time clock systems.

For engineers reviewing the TPS65510RGTT datasheet, TPS65510RGTT pinout, TPS65510RGTT application, or TPS65510RGTT equivalent, this page delivers verified technical context, validated pin functions, confirmed LDO output specifications, exact protection thresholds, and real-world timing behavior of power-path switching and indicator assertion.

Technical Context

The TPS65510RGTT implements a dual-mode boost converter with selectable PFM (low-quiescent) or PWM (fixed 750 kHz) operation via PWMON pin, using peak-current-mode control and internal reference voltages (1.250 V FB). Its power-path switch uses integrated P-ch and N-ch MOSFETs to route VOUT between boosted main-battery output and unregulated backup battery (VBK), with hysteresis-based transition at V(SW1) = 3.00 V ±60 mV.

Two independent open-drain indicators-CS monitors VBAT and VO_BT with UVLO detection (2.70 V ±200 mV) and hysteresis, while XRESET monitors VOUT with reset threshold 2.100 V ±52 mV-interface directly to CPU/DSP reset inputs. All four LDOs are internally regulated; VO1R2 and VO1R8 are enable-controlled via V_CTRL, and VRO/VOUT share the same 3.3 V nominal output but differ in power source and current capability (30 mA vs. 10–30 mA).

Key Specifications

Pinout & Package

TPS65510RGTT is housed in a thermally enhanced 16-pin VQFN (RGT) package with exposed thermal pad, requiring soldering to PCB ground plane per TI design guidelines. Pin 1 is located at top-left corner with quadrant Q2 orientation in tape.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar battery backup power management applications.

Compared with MAX8212ESA+, the TPS65510RGTT integrates boost conversion and multi-rail LDOs, eliminating external components and enabling true single-battery-to-RTC solutions. Against TPS65511RGTT, it offers broader VO_BT tolerance at lower cost, making it preferred for cost-sensitive consumer portable designs where 10 mV FB variation is acceptable.

Availability

TPS65510RGTT is available at Aetrix Electronics and suitable for digital still cameras, portable medical monitors, and industrial handheld terminals requiring stable component supply with guaranteed long-term availability and full traceability.

Supply support for TPS65510RGTT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of expertise in battery-powered system solutions.

The TPS65510RGTT belongs to TI's battery backup and power-path management product line, designed specifically for RTC and low-power memory retention in portable electronics where seamless main-to-backup switchover and ultra-low quiescent current are critical.

FAQ

What is the function of the PWMON pin on the TPS65510RGTT?

The PWMON pin on the TPS65510RGTT selects the operating mode of the integrated boost converter: a logic-low signal configures Pulse Frequency Modulation (PFM) for minimal quiescent current (100 µA), while a logic-high enables Pulse Width Modulation (PWM) at fixed 750 kHz for stable frequency and lower output ripple. This pin also controls FBG terminal impedance, determining whether VO_BT is set by a two-resistor (PWM) or three-resistor (PFM) feedback network.

How does the TPS65510RGTT handle power-path switching between main and backup batteries?

The TPS65510RGTT automatically switches the VOUT output source based on VO_BT voltage: when VO_BT ≥3.00 V (V(SW1)), VOUT is supplied by the 3.3-V LDO (VRO); when VO_BT falls below that threshold, VOUT routes directly from the VBK backup battery input. This transition includes 120 mV hysteresis to prevent oscillation, and the CS indicator asserts low during switchover to signal main supply failure - all without firmware involvement.

What are the key electrical differences between the TPS65510RGTT and TPS65511RGTT?

The TPS65510RGTT and TPS65511RGTT share identical pinout, package, and functional architecture, but differ in boost converter reference voltage: TPS65510RGTT uses 1.250 V (±20 mV) at FB, while TPS65511RGTT specifies 1.240 V (±10 mV). This results in ~0.8% lower nominal VO_BT for the same resistor divider, affecting headroom for downstream LDOs. Both parts maintain identical LDO outputs, protection thresholds, and timing parameters.

Can the TPS65510RGTT operate without an external inductor?

No, the TPS65510RGTT requires an external inductor connected between the SW pin and input capacitor to implement its boost DC/DC converter. The device does not include magnetic components. Typical designs use a 4.7 µH shielded inductor rated for ≥1.3 A saturation current. Operation without the inductor prevents VO_BT generation, disabling VRO, VOUT, and all LDO outputs dependent on boosted voltage.

What is the maximum continuous output current supported by the VOUT pin of the TPS65510RGTT?

The VOUT pin of the TPS65510RGTT supports up to 30 mA continuous output current when sourced from the internal 3.3-V LDO (VRO), as specified under test conditions of VO_BT = 5 V and VOUT ≥3.156 V. When VOUT is sourced from the VBK backup battery (during main supply failure), output current is limited only by VBK source capability and series resistance - the TPS65510RGTT itself imposes no additional current limit in that mode.