Texas Instruments TPS70612DRVT

Overview

TPS70612DRVT from Texas Instruments is a fixed 1.2-V, 150-mA ultralow-quiescent-current LDO voltage regulator in a WSON-6 package. It delivers 2% output accuracy over –40°C to +125°C, features 1-µA typical quiescent current, 245-mV dropout at 50 mA, reverse current protection, and active-high enable control - enabling long battery life in always-on sensor nodes and wearable power rails.

For engineers reviewing the TPS70612DRVT datasheet, TPS70612DRVT pinout, TPS70612DRVT application, or TPS70612DRVT equivalent, key selection criteria include its 1.2-V fixed output, 1-µA IQ, WSON-6 thermal performance (R_θJA = 73.1°C/W), shutdown current of 150 nA, and compatibility with ≥2.2-µF ceramic output capacitors.

Technical Context

The TPS70612DRVT uses a PMOS pass transistor architecture to achieve low dropout and inherent reverse current blocking without external diodes. Its precision band-gap reference and error amplifier maintain ±2% DC accuracy across temperature and load, while the undervoltage lockout (UVLO) ensures clean startup only when input exceeds 2.7 V.

Functional modes include normal regulation (VIN ≥ VOUT + V_DO), dropout operation (VIN < VOUT + V_DO), and disabled state (EN < 0.4 V), with integrated thermal shutdown (trip at 158°C, reset at 140°C) and current limit (min 200 mA) for fault resilience in compact, thermally constrained layouts.

Key Specifications

Pinout & Package

The TPS70612DRVT is housed in a thermally enhanced 2.00 mm × 2.00 mm WSON-6 package with an exposed thermal pad electrically connected to GND. The pad must be soldered to a PCB ground plane to achieve R_θJB = 42.6°C/W and prevent thermal derating above 85°C ambient.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with TPS70612DRVT, the TPS70612DBVR trades thermal performance for lower cost and wider availability in legacy footprints, while the MCP1700T-1202E/TT offers comparable IQ but sacrifices enable functionality and reverse current blocking - making TPS70612DRVT optimal for thermally dense, battery-critical, and bidirectionally isolated designs.

Availability

TPS70612DRVT is available at Aetrix Electronics and suitable for wearable health sensors, IoT edge nodes, medical implantables, and industrial smart transmitters requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for TPS70612DRVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in precision power management ICs.

The TPS706 series was designed specifically for ultralow-power, always-on applications in battery-constrained systems - emphasizing sub-µA quiescent current, reverse current blocking, and robust thermal protection in miniature packages.

FAQ

What is the minimum input voltage required for regulation with TPS70612DRVT?

The TPS70612DRVT requires a minimum input voltage of 2.7 V to operate, but to maintain regulated 1.2-V output, VIN must exceed VOUT + V_DO. At 50 mA load, dropout is 245 mV, so minimum functional input is 1.445 V - however, the absolute minimum specified VIN is 2.7 V per recommended operating conditions. Below 2.7 V, UVLO disables regulation regardless of load.

Does TPS70612DRVT require an input capacitor?

While the TPS70612DRVT is stable without an input capacitor, TI recommends a 0.1-µF to 2.2-µF ceramic capacitor from IN to GND. This improves PSRR, suppresses high-frequency input ripple, and enhances transient response - especially critical when powered from noisy switchers or long PCB traces. The capacitor should be placed within 2 mm of the IN and GND pins.

Can TPS70612DRVT be used with output capacitance less than 2.2 µF?

For the 1.2-V version, the TPS70612DRVT is stable with output capacitance as low as 2.0 µF (per datasheet Section 8.1.1). However, TI specifies ≥2.2 µF as the design target to ensure margin across voltage, temperature, and capacitor aging. Using 2.0 µF X7R may work but risks instability under worst-case tolerance (–20%) and dc bias derating - 2.2 µF is the validated minimum for robust production use.

How does reverse current protection function in TPS70612DRVT?

The TPS70612DRVT integrates active reverse current protection that blocks current flow from OUT to IN whenever V_OUT > V_IN, limiting leakage to 10 nA typical. This feature is always active - independent of EN state - and eliminates external diodes in multi-supply systems. It remains effective down to V_OUT ≥ 1.8 V; below 1.8 V, reverse conduction may occur if V_IN < V_OUT.

What is the thermal performance difference between TPS70612DRVT and TPS70612DBVR?

The TPS70612DRVT (WSON-6) achieves R_θJA = 73.1°C/W due to its exposed thermal pad soldered to PCB ground, while the TPS70612DBVR (SOT-23-5) has R_θJA = 212.1°C/W with no thermal pad. At 150 mA and 1.2-V drop, TPS70612DRVT dissipates 180 mW and rises ~13.1°C above ambient, whereas TPS70612DBVR rises ~38.1°C - making DRVT essential for sustained high-load operation above 60°C ambient.