Texas Instruments TPS78228DRVT

Overview

TPS78228DRVT from Texas Instruments is a fixed-output 2.8-V, 150-mA ultra-low-quiescent-current LDO regulator in a 2-mm × 2-mm SON-6 (DRV) package. It delivers 500 nA quiescent current, 130 mV dropout at 150 mA and ±3% output accuracy over load, line, and temperature - enabling multi-year battery life in always-on sensor nodes and MSP430-based portable instrumentation.

For engineers reviewing the TPS78228DRVT datasheet, TPS78228DRVT pinout, TPS78228DRVT application, or TPS78228DRVT equivalent, key selection criteria include ultra-low IQ for standby power budgeting, CMOS-compatible enable threshold (1.2 V turn-on), thermal shutdown behavior (160°C trip), stability with 1.0-μF ceramic output capacitance, and compatibility with TI's MSP430 microcontroller family in space-constrained designs.

Technical Context

The TPS78228DRVT uses a PMOS pass transistor architecture to achieve low dropout and near-zero load-dependent ground current - maintaining 0.42 μA typical I_GND at zero load and only 8 μA at 150 mA. Its internal active pulldown circuit discharges V_OUT during shutdown when V_IN > 2.2 V, supporting fast system reset without external components.

Operation is governed by three functional modes: normal regulation (V_IN ≥ V_OUT + V_DO, EN > 1.2 V), dropout (V_IN < V_OUT + V_DO, EN high), and disabled (EN < 0.4 V or T_J > 160°C). Thermal shutdown resets at 140°C, and current limit is internally set to 150 mA minimum under fault conditions.

Key Specifications

Pinout & Package

TPS78228DRVT is housed in a thermally enhanced 2-mm × 2-mm, 6-pin SON (DRV) package with an exposed thermal pad. The package supports high-power-density layouts and requires soldering the thermal pad to a dedicated GND plane for optimal thermal performance (R_θJB = 35.4°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-low-I_Q LDO applications.

Compared with TPS78228DDCR, the TPS78228DRVT offers superior thermal performance and integrated active pulldown; versus TPS7A0228PDBVR, it trades 250-nA I_Q for robust fault protection and simpler enable interfacing - making it the balanced choice for production-grade battery systems demanding reliability alongside ultra-low power.

Availability

TPS78228DRVT is available at Aetrix Electronics and suitable for wireless sensor nodes, MSP430-based data loggers, medical wearables, smart meter tamper detection, and other battery-operated embedded systems requiring stable component supply with long-lifecycle assurance.

Supply support for TPS78228DRVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, serving industrial, automotive, and consumer markets since 1930.

The TPS782 series was designed specifically for ultra-low-power battery applications - targeting microcontrollers like the MSP430 where nanoscale quiescent current and minimal board area are critical to multi-year operation.

FAQ

What is the maximum input voltage for the TPS78228DRVT?

The TPS78228DRVT supports an absolute maximum input voltage of 6 V, but its recommended operating range is 2.2 V to 5.5 V. Operating above 5.5 V risks exceeding absolute maximum ratings and may cause permanent damage. For reliable long-term operation, keep VIN within the recommended range - especially critical when powering from Li-ion batteries nearing full charge (4.2 V) or dual-AA configurations (3.2 V).

Does the TPS78228DRVT require an input capacitor?

The TPS78228DRVT does not require an input capacitor for stability, but TI strongly recommends placing a 0.1-μF to 1.0-μF low-ESR ceramic capacitor between IN and GND. This improves transient response, reduces noise coupling, and mitigates voltage excursions caused by source inductance - particularly important in battery-fed systems with long PCB traces or switching regulators upstream of the TPS78228DRVT.

How does the TPS78228DRVT behave during thermal shutdown?

When junction temperature reaches 160°C, the TPS78228DRVT disables its output and enters thermal shutdown. Output resumes automatically once the junction cools to approximately 140°C. This hysteresis prevents oscillation near the trip point. During shutdown, ground current drops to 18 nA, minimizing further heating - but sustained cycling indicates inadequate PCB thermal design or excessive power dissipation that must be addressed.

Can the TPS78228DRVT be used without connecting the thermal pad?

No - the thermal pad on the TPS78228DRVT is electrically connected to GND and is essential for both thermal performance and electrical integrity. Leaving it unconnected degrades R_θJB from 35.4°C/W to >100°C/W, drastically increasing junction temperature and triggering premature thermal shutdown. TI specifies soldering the pad to a solid GND plane with ≥4 thermal vias for production reliability.

Is the TPS78228DRVT compatible with the MSP430FR2355 microcontroller?

Yes - the TPS78228DRVT is explicitly designed for compatibility with TI's MSP430 family, including the MSP430FR2355. Its 1.2-V enable threshold matches MSP430 GPIO high-level output, its 500-nA quiescent current aligns with FR2355's LPM4.5 mode, and its 2.8-V output supplies the MCU's core and peripherals within specification. Layout guidelines in the TPS78228DRVT datasheet reference MSP430-specific decoupling practices.