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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

STMicroelectronics TRD136DT4

Name: TRD136DT4
Brand: STMicroelectronics
SKU: TRD136DT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TRD136DT4

Manufacturer:: STMicroelectronics

Category:: Single Bipolar Transistors

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: TRD136DT4.pdf

Description:: TRANS NPN 400V 3A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

TRD136DT4 from STMicroelectronics is a high-voltage fast-switching NPN power transistor in TO-252 (DPAK) package, rated for V_CES = 700 V, I_C = 3 A, and P_tot = 20 W at T_C ≤ 25°C, with integrated antiparallel collector-emitter diode and t_s/t_f = 0.8/0.16 µs. It is designed for electronic ballasts in fluorescent lighting and electronic transformers for halogen lamps.

For engineers reviewing the TRD136DT4 datasheet, TRD136DT4 pinout, TRD136DT4 application, or TRD136DT4 equivalent, key selection criteria include V_CEO(sus) = 400 V, V_CE(sat) = 0.7 V @ I_C = 0.6 A / I_B = 60 mA, h_FE = 10–20, integrated freewheel diode (V_F = 2.5 V @ I_F = 1 A), and RBSOA-optimized cellular emitter structure.

Technical Context

This device employs high-voltage multi-epitaxial planar technology with planar edge termination to achieve robust switching performance under inductive loads. Its cellular emitter layout enhances switching speed while preserving reverse-biased safe operating area (RBSOA) integrity.

The integrated antiparallel diode enables self-contained freewheeling in half-bridge or flyback topologies without external diode placement. Switching parameters are characterized using standardized inductive test circuits (L = 50 mH, V_Clamp = 200 V, R_BB = 0 Ω) per Figure 11 of the datasheet.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CES	700 V - Maximum collector-emitter blocking voltage with base open, enabling use in 400 V AC mains-derived topologies.
I_C	3 A continuous - Sustained current handling capability at case temperature ≤25°C, suitable for 20–40 W lighting drivers.
t_s/t_f	0.8 / 0.16 µs - Fast storage and fall times reduce switching losses in 20–100 kHz ballast operation.
V_F (diode)	2.5 V @ 1 A - Forward voltage of integrated collector-emitter diode, minimizing conduction loss during freewheeling phase.
h_FE	10–20 - DC current gain range at I_C = 1–2 A, supporting direct base drive with modest gate driver current.
P_tot	20 W @ T_C ≤ 25°C - Thermal dissipation limit defining heatsink requirements for continuous conduction mode operation.

Pinout & Package

TRD136DT4 is housed in a TO-252 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. Pin 1 = Base, Pin 2 = Collector (tab-connected), Pin 3 = Emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Base)	Control input	Receives base current to saturate or cut off the transistor; requires 60–500 mA drive depending on load current.
Pin 2 (Collector)	High-side switched node	Connected internally to metal tab; electrically and thermally coupled to PCB copper pour for heat dissipation.
Pin 3 (Emitter)	Reference return path	Serves as common emitter node for both transistor and integrated diode; must be low-inductance for stable switching.

Key Features

Feature	Design Value
Integrated antiparallel diode	Eliminates need for external freewheel diode in flyback/forward converters, reducing BOM count and layout area.
Cellular emitter structure	Improves current uniformity and switching consistency across production lots, lowering dynamic parameter spread.
Planar edge termination	Enables high V_CES rating while maintaining rugged RBSOA, critical for inductive turn-off stress.
Low t_s/t_f	Minimizes energy loss during transition intervals, directly improving efficiency in 20–65 kHz lighting inverters.

Applications

Fluorescent Lamp Ballast

Halogen Lamp Transformer

Use Scenario: High-frequency (20–65 kHz) resonant inverter driving T5/T8 fluorescent tubes in commercial lighting fixtures.

IC Role / Device Role / Timing Role: Main switching transistor in half-bridge topology, handling 350–400 V DC bus and delivering 0.3–0.6 A lamp current.

Use Value: Integrated diode enables compact, low-component-count design; 0.8 µs storage time ensures reliable zero-voltage switching (ZVS) initiation.

Use Scenario: Electronic transformer converting 12 V AC or 12 V DC to 12 V AC at ~35 kHz for 20–50 W low-voltage halogen lamps.

IC Role / Device Role / Timing Role: Primary-side switch in flyback or push-pull configuration, operating with 100–200 V reflected voltage and 1–2 A peak primary current.

Use Value: 400 V V_CEO(sus) supports safe operation under reflected voltage spikes; 0.16 µs fall time reduces EMI generation during turn-off.

AC-DC LED Driver

Inductive Load Snubberless Switch

Use Scenario: Non-isolated buck-derived constant-current driver for high-bay LED luminaires powered from 230 V AC rectified bus.

IC Role / Device Role / Timing Role: High-side switch controlling current through LED string, operating in discontinuous conduction mode (DCM) at 30–50 kHz.

Use Value: 700 V V_CES withstands line surge transients; integrated diode provides natural path for inductor current decay.

Use Scenario: Direct switching of solenoid valves or relay coils in industrial control modules without external snubbers.

IC Role / Device Role / Timing Role: Single-ended switch managing 24–48 V inductive loads with 1–3 A peak current and 10–100 ms duty cycles.

Use Value: RBSOA-optimized layout sustains repetitive inductive turn-off stress; 150 °C T_J(max) supports sealed enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGD3HF60D	600 V, 3 A, TO-252, integrated diode, but uses IGBT structure instead of bipolar; higher V_CE(sat) (1.8 V).	Lower switching speed (t_f ≈ 0.3 µs); better for <30 kHz, higher efficiency at light loads.	Prefer when lower gate drive complexity and higher dV/dt immunity outweigh switching speed needs.
BUL741	700 V, 5 A, TO-220, no integrated diode; slower switching (t_s > 2 µs); higher P_tot (50 W).	Requires external diode and larger heatsink; suited for linear-regulated or low-frequency (<10 kHz) applications.	Choose only if TO-220 mechanical fit is mandatory and board space allows discrete diode placement.

Compared with STGD3HF60D and BUL741, TRD136DT4 delivers superior switching speed and integrated diode convenience for 20–65 kHz lighting inverters, while maintaining tighter dynamic parameter spread and optimized RBSOA for reliability in cost-sensitive consumer-grade ballasts.

Availability

TRD136DT4 is available at Aetrix Electronics and suitable for electronic ballasts, halogen lamp transformers, and non-isolated AC-DC LED drivers requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for TRD136DT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for industrial, automotive, and consumer markets.

TRD136DT4 belongs to ST's high-voltage power transistor product line, engineered specifically for energy-efficient, compact lighting control systems operating at 20–100 kHz with stringent reliability and lot-to-lot consistency requirements.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The TRD136DT4 has a maximum operating junction temperature (T_J) of 150 °C. This defines the upper thermal limit for safe operation; exceeding it risks permanent degradation of h_FE and increased leakage. Thermal design must ensure that power dissipation-calculated from I_C, V_CE(sat), and switching losses-keeps T_J below this threshold using appropriate PCB copper area and optional heatsinking on the collector tab.

Does the integrated diode support bidirectional current flow in all operating modes?

Yes-the integrated antiparallel diode conducts only from collector to emitter (forward direction), enabling freewheeling during inductive turn-off. It is not rated for reverse conduction (emitter-to-collector), nor for sustained forward conduction beyond its specified I_F = 1 A and V_F = 2.5 V. It is not intended for synchronous rectification or bidirectional switching roles.

Can TRD136DT4 replace older ST bipolar transistors like BDW93C in existing designs?

TRD136DT4 is not a drop-in replacement for BDW93C due to differences in pinout (BDW93C is TO-126, emitter-base-collector order), V_CEO (400 V vs. 100 V), and lack of internal diode in BDW93C. While electrical ratings overlap in some regions, layout redesign and driver revalidation are required. No documented cross-reference exists between these parts in ST documentation.

How is the "minimum lot-to-lot spread" verified and what parameters does it cover?

The minimum lot-to-lot spread refers to controlled variation in dynamic parameters-specifically t_s, t_f, V_CE(sat), and h_FE-verified through 100% production testing per ST's quality protocol. Data sheets specify typical values and min/max bounds (e.g., h_FE = 10–20 at I_C = 2 A), and statistical process control (SPC) charts confirm Cp/Cpk ≥ 1.33 across wafer lots and assembly batches.

TRD136DT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 500mA, 2A

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 10 @ 2A, 5V

Power - Max:: 20 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

TRD136DT4 FAQ

1.How can I place an order for TRD136DT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for TRD136DT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TRD136DT4 reliable?

The price and inventory of TRD136DT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TRD136DT4 is usually 5 days.

3.What payment methods are accepted for TRD136DT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TRD136DT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TRD136DT4?

TRD136DT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TRD136DT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TRD136DT4?

For technical support, including TRD136DT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TRD136DT4 requirements.

6.How does Aetrix verify that TRD136DT4 is sourced from the original manufacturer or authorized distributors?

All TRD136DT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TRD136DT4 meets industry standards.

7.What is the process for return or replacement of TRD136DT4?

All TRD136DT4 units undergo pre-shipment inspection (PSI). If there is an issue with TRD136DT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TRD136DT4 part is unused and in its original packaging.

Return procedure for TRD136DT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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