STMicroelectronics TRD236DT4

Overview

TRD236DT4 from STMicroelectronics is a high-voltage fast-switching NPN power transistor in TO-252 (DPAK) package, rated for V_CES = 700 V, I_C = 4 A continuous, and P_tot = 35 W at T_c ≤ 25 °C, with integrated antiparallel collector-emitter diode and t_s/t_f < 0.6 µs/0.1 µs under inductive load. It is engineered for electronic ballasts in fluorescent lighting systems requiring robust RBSOA and low dynamic parameter spread.

For engineers reviewing the TRD236DT4 datasheet, TRD236DT4 pinout, TRD236DT4 application, or TRD236DT4 equivalent, this device serves as a high-reliability switching element in high-frequency AC-DC conversion stages where voltage blocking, fast turn-off, and thermal stability under pulsed operation are critical selection criteria.

Technical Context

This transistor employs high-voltage multi-epitaxial planar technology with cellular emitter structure and planar edge termination to simultaneously optimize switching speed and ruggedness. Its integrated antiparallel diode enables self-commutated operation in resonant topologies without external freewheeling components.

The device operates with V_CEO(sus) = 400 V under pulsed conditions (300 ms, ≤1.5% duty), supports I_CM = 8 A peak current, and maintains h_FE = 8–28 across I_C = 10 mA to 2.5 A, enabling stable base drive design in high-efficiency lighting inverters.

Key Specifications

Pinout & Package

Package: TO-252 (DPAK), surface-mount, single-ended heat dissipation via exposed drain pad (pin 3). Dimensions per ST Doc ID 018985 Rev 1: D = 6.0–6.2 mm, E = 6.4–6.6 mm, L = 1–1.5 mm, e1 = 4.4–4.6 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.

Compared with STGD20N40LZ and BUL741, TRD236DT4 uniquely combines integrated diode, sub-microsecond switching, and tight dynamic parameter control-making it optimal for compact, high-reliability fluorescent/halogen electronic ballasts where BOM reduction and batch consistency are essential.

Availability

TRD236DT4 is available at Aetrix Electronics and suitable for electronic ballast design, halogen lamp transformer development, and resonant AC-DC converter prototyping requiring stable component supply and long-term industrial availability.

Supply support for TRD236DT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

TRD236DT4 belongs to ST's high-voltage bipolar power transistor product line, developed specifically for energy-efficient lighting control systems demanding high dV/dt immunity, fast switching, and integrated diode functionality.

FAQ

Is TRD236DT4 RoHS-compliant and lead-free?

Yes. TRD236DT4 is manufactured in ST's ECOPACK®-compliant TO-252 package, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1. The device uses lead-free terminations and halogen-free molding compound per ST's environmental specifications.

What is the maximum recommended PCB copper area for thermal performance?

For full 35 W dissipation at T_c ≤ 25 °C, ST recommends ≥ 12 cm² of 2-oz copper on the collector pad layer, connected via ≥ 6 thermal vias (0.3 mm diameter) to inner ground planes. Smaller layouts reduce power handling proportionally per the derating curve in Figure 3.

Can TRD236DT4 replace BUL741 directly in existing designs?

No direct drop-in replacement. While both are high-voltage NPN transistors, TRD236DT4 has integrated diode, faster switching, tighter h_FE spread, and TO-252 footprint versus TO-220. PCB layout, base drive, and snubber design must be re-evaluated; the internal diode may eliminate an external component but alters flyback path behavior.

Does TRD236DT4 support parallel operation?

Yes, but with strict matching requirements. ST recommends selecting units with h_FE within ±10% and V_CE(sat) within ±0.05 V. External emitter resistors (0.1 Ω, 1% tolerance) are mandatory to balance current sharing; thermal coupling between devices must be symmetrical to avoid thermal runaway.