Texas Instruments TRF370333IRGET

Overview

TRF370333IRGET from Texas Instruments is a 0.35–4 GHz SiGe direct quadrature modulator with 3.3-V common-mode baseband inputs, 9 dBm P1dB, 23 dBm OIP3, –163 dBm/Hz noise floor, and RF output capable of driving 50-Ω single-ended loads without external components - used in WCDMA and LTE transmit channels.

For engineers reviewing the TRF370333IRGET datasheet, TRF370333IRGET pinout, TRF370333IRGET application, or TRF370333IRGET equivalent, this page delivers verified RF performance specs, validated I/Q interface requirements, thermal derating data, and real-world ACPR/EVM behavior at 2140 MHz and 2500 MHz for cellular infrastructure design.

Technical Context

The TRF370333IRGET implements a double-balanced mixer architecture with integrated differential-to-single-ended RF output stage and on-die biasing. It operates from a single 4.5–5.5 V supply and accepts differential I/Q baseband inputs referenced to 3.3 V DC common-mode voltage.

LO input requires –5 to +12 dBm drive into 50 Ω (single-ended), with LOP/LON pins accepting complementary signals; RF output is single-ended at pin 16, internally matched to 50 Ω with >8 dB return loss across 1.8–2.5 GHz.

Key Specifications

Pinout & Package

TRF370333IRGET uses a 24-pin QFN package (4 mm × 4 mm, 0.5-mm pitch, exposed thermal pad). Pin numbering follows standard top-view convention with pin 1 at bottom-left corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar quadrature modulator applications.

Compared with ADL5375-05ACPZ-R7, TRF370333IRGET offers lower power consumption and simpler LO interface, while LM2531LQ1570E/NOPB trades bandwidth and DAC compatibility for system-level integration - making TRF370333IRGET optimal for infrastructure-grade WCDMA/LTE transmit chains requiring 3.3-V I/Q alignment and thermal stability.

Availability

TRF370333IRGET is available at Aetrix Electronics and suitable for cellular infrastructure, small-cell base stations, and wireless MAN equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing for FCC/CE-certified designs.

Supply support for TRF370333IRGET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and connectivity solutions for industrial, automotive, and communications markets.

The TRF3703 family was designed specifically for high-linearity, low-noise RF upconversion in 3G/4G wireless infrastructure, targeting WCDMA, LTE, and WiMAX base station transmitters with demanding ACPR and EVM requirements.

FAQ

What is the recommended power supply configuration for TRF370333IRGET?

TRF370333IRGET requires a single 4.5–5.5 V supply applied to pins 18 and 24, each decoupled with a 4.7-µF tantalum capacitor and a 100-pF ceramic capacitor. Total supply current is 210–235 mA at 5 V and 25°C. Ground connections (pins 2, 5, 8, 11, 12, 14, 17, 19, 20, 23) must tie to a low-inductance ground plane to maintain RF performance. The TRF370333IRGET datasheet specifies RθJA = 29.4°C/W, so thermal relief via the exposed pad is essential for continuous operation above 70°C ambient.

How does TRF370333IRGET differ from TRF370315IRGET?

The TRF370333IRGET and TRF370315IRGET share identical RF architecture and pinout but differ in baseband input common-mode voltage: TRF370333IRGET requires 3.3 V, while TRF370315IRGET requires 1.5 V. This makes TRF370333IRGET compatible with DAC5687 and similar 3.3-V-output DACs without level shifters, whereas TRF370315IRGET suits lower-voltage mixed-signal ASICs. Both achieve comparable P1dB (9.5 dBm) and OIP3 (20–23 dBm), but TRF370333IRGET shows +0.5 dB voltage gain at 2.5 GHz.

What LO drive level is required for optimal TRF370333IRGET performance?

TRF370333IRGET requires –5 to +12 dBm LO power into the LOP pin (50 Ω, single-ended), with LON terminated to 50 Ω to ground. At 0 dBm LO drive, TRF370333IRGET achieves 23 dBm OIP3 and –47 dBc sideband suppression at 2.14 GHz. Increasing LO power to +5 dBm improves OIP3 by ~1 dB but raises supply current; exceeding +12 dBm risks damage per absolute maximum ratings. The TRF370333IRGET functional block diagram confirms LO port return loss >15 dB across 0.35–4 GHz.

Can TRF370333IRGET be used for LTE FDD uplink transmission?

Yes - TRF370333IRGET supports LTE Band 1 (1920–1980 MHz) and Band 3 (1710–1785 MHz) uplink with measured –72 dBc ACPR at –9 dBm output (1 WCDMA signal, fLO = 2140 MHz). Its 3.3-V I/Q interface aligns with Xilinx Zynq RFSoC DAC outputs, and its –162 dBm/Hz noise floor preserves EVM below 2.5% for 20-MHz 64-QAM signals. The TRF370333IRGET evaluation board schematic (SLWS184J, Fig. 26) validates direct connection to FPGA-based digital front-ends.

What is the thermal resistance and maximum junction temperature of TRF370333IRGET?

TRF370333IRGET has RθJA = 29.4°C/W (high-K board, still air) and RθJC = 18.6°C/W. Its absolute maximum junction temperature is 150°C, with recommended operating ambient range of –40°C to +85°C. At 235 mA and 5 V, power dissipation is ~1.175 W; thus, with RθJA = 29.4°C/W, junction temperature rise is ~34.5°C above ambient - keeping TJ < 120°C at 85°C ambient. The exposed thermal pad must be soldered to a solid copper pour for reliable thermal conduction.