Texas Instruments TS5N118DBQR

Overview

TS5N118DBQR from Texas Instruments is a 1-of-8 FET multiplexer/demultiplexer bus switch optimized for high-bandwidth digital and analog signal routing. It features 3 Ω typical ON-state resistance (ron), 25 MHz bandwidth, bidirectional rail-to-rail switching (0–10 V), and operates from 4.75 V to 5.25 V. It serves as a low-distortion, near-zero-propagation-delay interface in PCI and memory-interleaving systems.

For engineers reviewing the TS5N118DBQR datasheet, TS5N118DBQR pinout, TS5N118DBQR application, or TS5N118DBQR equivalent, key selection criteria include its 16-pin SSOP (DBQ) package, Ioff partial-power-down capability, 20 pF max OFF-state capacitance at B port, and OE-controlled high-impedance isolation during power sequencing.

Technical Context

The TS5N118DBQR integrates an internal charge pump to elevate gate voltage, enabling flat, low ron across its 0–10 V signal range. Its 8-channel FET architecture supports single-pole, 8-throw (1-of-8) configuration with three binary select lines (S0–S2) and one active-low output-enable (OE).

It implements Ioff circuitry to block reverse current during partial power-down, ensuring bus isolation when VCC = 0 V. The device maintains high OFF isolation (–50 dB at 25 MHz) and low crosstalk (–50 dB), making it suitable for differential signaling and broadband data paths where signal integrity is critical.

Key Specifications

Pinout & Package

TS5N118DBQR is housed in a 16-pin Shrink Small-Outline Package (SSOP), JEDEC MO-137 compliant, with 0.65 mm lead pitch and 1.75 mm max height. Pin 1 identifier is marked in the top-left corner of the package body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1-of-8 analog/digital multiplexer applications.

Compared with TS5N118DBQR, SN74CBT3251DBQR requires system-level voltage translation for 5-V operation and offers no analog signal support, while TS3L110DBQR trades 3 Ω ron and Ioff robustness for broader availability and simpler biasing-neither matches TS5N118DBQR's combination of 5-V rail-to-rail analog switching, charge-pump flatness, and hot-swap safety.

Availability

TS5N118DBQR is available at Aetrix Electronics and suitable for PCI interface design, memory interleaving architectures, and bus isolation circuits requiring stable component supply across industrial temperature ranges (–40°C to +85°C).

Supply support for TS5N118DBQR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions with emphasis on reliability, precision, and power efficiency.

The TS5N118DBQR belongs to TI's high-bandwidth bus switch product line, engineered specifically for low-distortion, rail-to-rail signal routing in PCI, networking, and memory subsystems where timing integrity and analog compatibility are essential.

FAQ

What is the maximum signal voltage range supported by the TS5N118DBQR?

The TS5N118DBQR supports a 0-V to 10-V signal voltage range on its data I/O ports (A and B1–B8). This rail-to-rail capability allows the TS5N118DBQR to pass both digital logic signals and analog waveforms without clipping or level shifting, making it suitable for mixed-signal applications such as test equipment and programmable logic interfaces.

Does the TS5N118DBQR support partial power-down operation?

Yes, the TS5N118DBQR includes Ioff circuitry that actively blocks current backflow when VCC = 0 V. This feature ensures safe operation during partial power-down scenarios, such as hot-plug events or staged power sequencing. The TS5N118DBQR maintains isolation between ports even with power removed, preventing damage to upstream or downstream components.

What is the role of the internal charge pump in the TS5N118DBQR?

The internal charge pump in the TS5N118DBQR elevates the gate voltage of the pass transistors to ensure low and flat ON-state resistance (ron ≈ 3 Ω) across the full 0–10 V signal range. Unlike passive FET switches, this architecture eliminates ron variation with input voltage, enabling consistent signal integrity and minimal propagation delay-key for the TS5N118DBQR's use in high-speed PCI and memory routing.

How does the TS5N118DBQR achieve high OFF isolation and low crosstalk?

The TS5N118DBQR achieves –50 dB OFF isolation and –50 dB crosstalk at 25 MHz through optimized FET layout, low OFF-state capacitance (20 pF max), and precise channel-to-channel isolation design. These characteristics are measured under standard 50-Ω network analyzer conditions and directly support the TS5N118DBQR's deployment in sensitive RF front-ends and high-density data routing where signal leakage must be minimized.

Can the TS5N118DBQR be used in analog signal routing applications?

Yes, the TS5N118DBQR is explicitly qualified for both digital and analog applications. Its 0–10 V signal range, low THD due to flat ron, low Cio(OFF), and low distortion make it appropriate for routing audio, sensor outputs, and other analog waveforms. The TS5N118DBQR's datasheet confirms analog suitability, and its performance metrics-including bandwidth and isolation-are validated under AC small-signal conditions relevant to analog signal integrity.