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STMicroelectronics TSU111IQ1T

Part No.:
TSU111IQ1T
Manufacturer:
STMicroelectronics
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
6-XFDFN
Datasheet:
AetrixTSU111IQ1T.pdf
Description:
IC CMOS 1 CIRCUIT 6DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,493

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Product details

Overview

TSU111IQ1T from STMicroelectronics is a single-channel nanopower CMOS operational amplifier designed for ultra-low-power sensor signal conditioning in battery-constrained systems. It delivers 900 nA typical supply current, 150 µV max input offset voltage at 25 °C, rail-to-rail input/output operation across 1.5–5.5 V supply, and 3.6 µVpp low-frequency noise (0.1–10 Hz), enabling precision gas sensing and energy-harvesting interfaces.

For engineers reviewing the TSU111IQ1T datasheet, TSU111IQ1T pinout, TSU111IQ1T application, or TSU111IQ1T equivalent, this op-amp is selected for sub-µA current budgeting, high-impedance electrochemical sensor interfacing, long-life coin-cell operation (e.g., CR2032), and low-noise DC-coupled amplification where offset drift and EMI robustness are critical.

Technical Context

The TSU111IQ1T employs complementary PMOS/NMOS input pairs to achieve true rail-to-rail input common-mode range (VCC− −0.1 V to VCC+ +0.1 V) without phase reversal. Its 11.5 kHz gain bandwidth product and 2.7 V/ms slew rate support stable closed-loop operation with capacitive loads up to 100 pF when properly compensated.

It features MOSFET inputs with ≤10 pA bias current at 25 °C-critical for trans-impedance amplifier configurations with high-impedance sensors-and integrates on-die ESD protection rated to 4 kV HBM, requiring external series resistors if input voltages exceed supply rails.

Key Specifications

Parameter Value and Actual Design Meaning
Supply Current 900 nA typ. at 25 °C - enables >25-year operation on a 220 mAh CR2032 coin cell
Input Offset Voltage 150 µV max. at 25 °C - supports high-accuracy DC measurement without calibration
Low-Frequency Noise 3.6 µVpp (0.1–10 Hz) - minimizes baseline drift in gas sensor output signals
Gain Bandwidth Product 11.5 kHz typ. at 5 V - sufficient for slow-varying sensor outputs (e.g., O₂, CO, H₂S)
Input Bias Current 10 pA max. at 25 °C - preserves signal integrity with MΩ-range sensor impedances
Common-Mode Range VCC− −0.1 V to VCC+ +0.1 V - allows direct interfacing to grounded or rail-referenced sensors
EMI Rejection 79 dB at 900 MHz - mitigates RF interference in wireless wearable environments

Pinout & Package

TSU111IQ1T is housed in a 5-pin SC70 package (2.0 × 1.25 mm), optimized for space-constrained portable designs. The exposed pad is not electrically connected and may be left floating or tied to VCC− for thermal enhancement.

Pin/Terminal Circuit Role Design Meaning
1: VCC+ Positive supply rail Accepts 1.5–5.5 V; decoupling capacitor (10 nF) must be placed adjacent to this pin
2: NC No connect Internally unconnected; must remain unpopulated or floating - no routing or soldering
3: IN+ Non-inverting input High-impedance MOS node; requires guarding trace to suppress PCB leakage currents
4: OUT Amplifier output Rail-to-rail capable; drives ≥10 kΩ load while maintaining <40 mV saturation drop
5: IN− Inverting input Used in trans-impedance or differential configurations; sensitive to ESD overstress

Key Features

Feature Design Value
Nanopower consumption 900 nA typ. ICC enables multi-decade battery life in sealed IoT endpoints
Zero-calibration accuracy 150 µV max. Vio eliminates factory trimming cost in gas alarm BOMs
Rail-to-rail I/O Full dynamic range utilization with 1.5 V supply - ideal for single-cell Li coin systems
Trans-impedance readiness ≤10 pA Ibias ensures <0.1% error with 100 MΩ feedback resistors in CO sensor circuits
Fast desaturation recovery 630 µs overload recovery prevents false triggers in PIR-based intrusion alarms

Applications

Gas Sensor Interface PIR Motion Alarm

Use Scenario: Amplifying nanoamp-level current from electrochemical CO/O₂/H₂S sensors in industrial air quality monitors.

IC Role / Device Role / Timing Role: Trans-impedance amplifier converting sensor current to calibrated voltage with minimal loading.

Use Value: 10 pA input bias and 3.6 µVpp noise preserve resolution down to 1 ppm gas concentration changes.

Use Scenario: Conditioning weak analog output from passive infrared (PIR) motion detectors in battery-powered security systems.

IC Role / Device Role / Timing Role: Low-drift DC-coupled amplifier boosting microvolt-level PIR signals before ADC sampling.

Use Value: 150 µV max. offset ensures reliable detection threshold stability over -40 to 85 °C ambient range.

Energy-Harvesting Signal Chain Wearable Battery Monitoring

Use Scenario: Amplifying µV–mV outputs from thermoelectric or piezoelectric harvesters powering medical wearables.

IC Role / Device Role / Timing Role: Ultra-low-ICC front-end buffer isolating high-Z harvester from downstream regulation circuitry.

Use Value: 900 nA quiescent current prevents >99% of harvested energy from being consumed by the signal path itself.

Use Scenario: Measuring battery discharge current via shunt resistor in Bluetooth LE hearables and smart patches.

IC Role / Device Role / Timing Role: Precision current-sense amplifier with rail-to-rail output driving low-power SAR ADCs.

Use Value: Rail-to-rail output swing maximizes ADC full-scale utilization across 1.5–5.5 V battery voltage range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nanopower operational amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
TSU101IYLT Lower 550 nA ICC but reduced 8 kHz GBP and higher 250 µV Vio max. Better for ultra-long-life static sensing (e.g., structural health monitoring), less suitable for fast transient PIR signals. Choose when power is more critical than bandwidth or offset; verify loop stability with higher Rf.
TSZ121ILT Higher 1.8 µA ICC but superior 20 µV Vio max. and 200 kHz GBP. Preferred for high-accuracy, moderate-power applications like medical electrode amplifiers where calibration is acceptable. Choose when offset and bandwidth outweigh battery life; requires larger decoupling due to higher ICC.

Compared with TSU111IQ1T, TSU101IYLT trades bandwidth and offset for lower current, while TSZ121ILT sacrifices nanopower efficiency for precision and speed-making TSU111IQ1T the optimal balance for gas sensing and energy harvesting where both sub-µA draw and <200 µV offset are mandatory.

Availability

TSU111IQ1T is available at Aetrix Electronics and suitable for gas detection systems, PIR-based security alarms, energy-harvesting wearables, and ultra-long-life battery current monitoring requiring stable component supply across industrial temperature ranges and extended production lifecycles.

Supply support for TSU111IQ1T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, sensing, and control solutions for automotive, industrial, and consumer markets.

The TSU11x family is part of ST's nanopower precision op-amp product line, engineered specifically for battery-operated sensor nodes where decades-long operation, rail-to-rail functionality, and uncalibrated accuracy are non-negotiable design requirements.

FAQ

What is the maximum capacitive load the TSU111IQ1T can drive stably?

The TSU111IQ1T maintains phase margin ≥60° with up to 100 pF capacitive load when configured with appropriate feedback resistance (≥100 kΩ) and a 10 nF local decoupling capacitor. For loads >100 pF, an isolation resistor (Riso) between output and capacitance is required per Figure 30 in DS11846 to prevent peaking or oscillation.

Can TSU111IQ1T operate from a 1.2 V supply?

No. The absolute minimum supply voltage is 1.5 V per Table 1 and Table 2 of DS11846. Operation below 1.5 V risks undefined behavior, including failure to meet specified offset, bandwidth, or rail-to-rail output swing. For sub-1.5 V systems, consider ST's TSX561 or alternative low-VCC op-amps.

Is the NC pin on TSU111IQ1T electrically isolated?

Yes. Pin 2 (NC) is internally unconnected and must remain unpopulated or floating-no trace, solder, or test point should contact it. Connecting it risks parasitic coupling, increased leakage, or ESD path disruption, especially in high-impedance sensor layouts.

How does the TSU111IQ1T handle input overvoltage beyond the supply rails?

Its ESD diodes clamp inputs to VCC+ and VCC−, but sustained current >10 mA (per Table 1) will cause damage. Always use series input resistors (≥10 kΩ) when signals may exceed rails-especially in noisy industrial or automotive environments-to limit diode conduction and protect internal circuitry.

TSU111IQ1T Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
6-XFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Amplifier Type:
CMOS
Number of Circuits:
1
Output Type:
-
Slew Rate:
0.0027V/µs
Gain Bandwidth Product:
11.5 kHz
-3db Bandwidth:
-
Current - Input Bias:
10 pA
Voltage - Input Offset:
150 µV
Current - Supply:
950nA
Current - Output / Channel:
45 mA
Voltage - Supply Span (Min):
1.5 V
Voltage - Supply Span (Max):
5.5 V
Operating Temperature:
-40°C ~ 85°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-DFN (1.2x1.3)

TSU111IQ1T FAQ

1.How can I place an order for TSU111IQ1T through Aetrix?

Please submit a Request for Quotation (RFQ) for TSU111IQ1T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TSU111IQ1T reliable?

The price and inventory of TSU111IQ1T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TSU111IQ1T is usually 5 days.

3.What payment methods are accepted for TSU111IQ1T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TSU111IQ1T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TSU111IQ1T?

TSU111IQ1T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TSU111IQ1T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TSU111IQ1T?

For technical support, including TSU111IQ1T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TSU111IQ1T requirements.

6.How does Aetrix verify that TSU111IQ1T is sourced from the original manufacturer or authorized distributors?

All TSU111IQ1T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TSU111IQ1T meets industry standards.

7.What is the process for return or replacement of TSU111IQ1T?

All TSU111IQ1T units undergo pre-shipment inspection (PSI). If there is an issue with TSU111IQ1T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TSU111IQ1T part is unused and in its original packaging.

Return procedure for TSU111IQ1T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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