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STMicroelectronics TSU112IYQ3T
- Part No.:
- TSU112IYQ3T
- Manufacturer:
- STMicroelectronics
- Category:
- Instrumentation, Op Amps, Buffer Amps
- Package:
- 8-WFDFN Exposed Pad
- Datasheet:
-
TSU112IYQ3T.pdf
- Description:
- IC CMOS 2 CIRCUIT 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,442
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Product details
Overview
TSU112IYQ3T from STMicroelectronics is a dual-channel, AEC-Q100 qualified nanopower operational amplifier optimized for ultra-low-power sensor signal conditioning and battery monitoring in automotive and industrial systems. It delivers 920 nA typical supply current per channel at 3.3 V, 150 µV max input offset voltage at 25 °C, rail-to-rail input/output, and 9 kHz gain bandwidth - enabling direct interface with high-impedance electrochemical sensors and CR2032-powered BMS wake-up circuits.
For engineers reviewing the TSU112IYQ3T datasheet, TSU112IYQ3T pinout, TSU112IYQ3T application, or TSU112IYQ3T equivalent, key selection criteria include sub-microamp quiescent current stability across 1.5–5.5 V supply, guaranteed 400 µV max offset over –40 to 125 °C, 4.6 µVpp low-frequency noise, 10 pA max input bias current, and DFN8 2×2 package compatibility with space-constrained automotive modules.
Technical Context
The TSU112IYQ3T integrates two independent CMOS op-amp channels with complementary PMOS/NMOS input stages, enabling true rail-to-rail input operation from (VCC−) − 0.1 V to (VCC+) + 0.1 V and eliminating phase reversal. Its nanopower architecture uses optimized biasing to maintain 9 kHz GBP and 70° phase margin across 1.5–5.5 V supply while limiting ICC to ≤1.65 µA over full temperature range.
Input stage design supports trans-impedance configurations with ≤10 pA input bias current at 25 °C and ≤200 pA over –40 to 125 °C, making it suitable for photo/UV and gas sensing. ESD protection includes 4 kV HBM diodes on all pins, with absolute maximum ratings specifying ±6 V differential input and 150 mA latch-up immunity per JEDEC JESD78E.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Supply Current (per channel) | 920 nA typ. at 3.3 V, 25 °C - enables >25-year operation on 220 mAh CR2032 battery |
| Input Offset Voltage | 150 µV max. at 25 °C; 400 µV max. over –40 to 125 °C - supports high-accuracy BMS voltage monitoring without calibration |
| Gain Bandwidth Product | 9 kHz typ. - sufficient for DC–1 kHz sensor signal conditioning with stable unity-gain response |
| Input Bias Current | 10 pA max. at 25 °C - preserves signal integrity when interfacing with >100 MΩ impedance sensors |
| Low-Frequency Noise | 4.6 µVpp (0.1–10 Hz) - critical for precision energy harvesting and microvolt-level sensor outputs |
| Common-Mode Rejection | 81 dB min. at 3.3 V, 25 °C - rejects supply ripple and PCB coupling in noisy automotive environments |
| ESD Rating | 4 kV HBM - meets AEC-Q100 stress requirements for under-hood electronics |
Pinout & Package
TSU112IYQ3T is supplied in an 8-pin DFN 2×2 mm package with wettable flanks and exposed thermal pad (connected to VCC− or left floating). Pin 1 is marked by a dot; pin numbering follows standard counter-clockwise layout from top-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | OUT1 | Output of Channel 1 - rail-to-rail swing supports direct ADC interface without level-shifting |
| 2 | IN1− | Inverting input of Channel 1 - matched with IN1+ for precision differential sensing |
| 3 | IN1+ | Non-inverting input of Channel 1 - low 10 pA bias enables high-Z sensor connection |
| 4 | VCC− | Negative supply rail - also serves as thermal pad connection point for improved power dissipation |
| 5 | IN2+ | Non-inverting input of Channel 2 - identical electrical specs to IN1+, enabling dual-sensor parallel acquisition |
| 6 | IN2− | Inverting input of Channel 2 - supports independent gain configuration per channel |
| 7 | OUT2 | Output of Channel 2 - fully independent output stage avoids crosstalk in multi-channel monitoring |
| 8 | VCC+ | Positive supply rail - operates down to 1.5 V, compatible with single-cell LiFePO₄ or regulated LDO outputs |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q100 Grade Y qualification | Validated for automotive applications including battery management and on-board chargers per Rev 0 test plan |
| Rail-to-rail input/output | Extends usable dynamic range to within 100 mV of rails, maximizing ADC resolution in low-voltage systems |
| 4.6 µVpp 0.1–10 Hz noise | Enables detection of sub-millivolt signals from thermopiles and piezoelectric harvesters |
| 10 pA max. input bias current | Permits use with >1 GΩ pH electrodes and photodiode arrays without signal degradation |
| Fast overload recovery | 420 µs (positive rail) / 880 µs (negative rail) - prevents false wake-up triggers in BMS comparator mode |
Applications
| Battery Management System (BMS) | On-Board Charger (OBC) |
|---|---|
Use Scenario: Monitors cell voltage imbalance during charging/discharging cycles to trigger MCU wake-up only when threshold violation occurs. IC Role / Device Role / Timing Role: Ultra-low-power op-amp acting as precision comparator and analog front-end for voltage sense resistors. Use Value: Reduces system standby current to <1 µA while maintaining ±1 mV measurement accuracy over full automotive temperature range. | Use Scenario: Conditions feedback signals from isolated current/voltage sensors in bidirectional AC/DC conversion stages. IC Role / Device Role / Timing Role: Dual-channel signal conditioner providing independent gain and offset correction for primary and secondary side sensing. Use Value: Eliminates need for external precision references and reduces component count by integrating rail-to-rail I/O with 150 µV offset. |
| Energy Harvesting Interface | Wireless Charging Control |
Use Scenario: Amplifies microvolt-level outputs from thermoelectric or piezoelectric harvesters before rectification and storage. IC Role / Device Role / Timing Role: Trans-impedance amplifier converting nanoamp sensor currents into measurable voltage with minimal loading. Use Value: Enables reliable start-up from <100 nW ambient power due to 920 nA quiescent draw and 10 pA input bias. | Use Scenario: Detects foreign object insertion (FOD) and coil misalignment via resonant frequency shift analysis in Qi-compliant transmitters. IC Role / Device Role / Timing Role: Low-noise amplifier conditioning tank voltage/current feedback for digital demodulation and control loop stability. Use Value: 4.6 µVpp noise floor ensures accurate amplitude measurement of 100–205 kHz carrier signals without SNR degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nanopower, high-accuracy op-amp applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TSZ122IYLT | Lower 580 nA ICC but reduced 4.5 kHz GBP and no AEC-Q100 qualification | Suitable for non-automotive portable medical sensors where extended bandwidth is not required | Select when ultra-minimal current dominates over automotive compliance and bandwidth needs |
| OPA388IDR | Higher 650 µA ICC but superior 10 µV offset and 10 MHz GBP | Preferred for high-speed precision instrumentation where power budget allows >600× higher current draw | Select when accuracy and bandwidth outweigh battery life constraints in industrial test equipment |
Compared with TSZ122IYLT, TSU112IYQ3T trades 3.5 kHz bandwidth for AEC-Q100 qualification and 2× higher GBP - critical for automotive diagnostics; versus OPA388IDR, it achieves 715× lower ICC at the cost of 1100× lower GBP, making it optimal for always-on monitoring rather than active signal processing.
Availability
TSU112IYQ3T is available at Aetrix Electronics and suitable for battery management systems, on-board chargers, and wireless charging control requiring stable component supply with automotive-grade reliability and long-lifecycle support.
Supply support for TSU112IYQ3T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.
The TSU11x family targets ultra-low-power analog signal conditioning in battery-critical applications, with TSU112IYQ3T specifically engineered for dual-channel, AEC-Q100-compliant monitoring in automotive electrification subsystems.
FAQ
What is the thermal pad connection recommendation for TSU112IYQ3T?
The exposed thermal pad on the DFN8 2×2 package must be soldered to a PCB copper pour connected to VCC− for optimal thermal performance and EMI suppression. Leaving it floating is permitted but degrades thermal resistance by ~30% and increases susceptibility to noise coupling in high-impedance sensor paths.
Can TSU112IYQ3T operate reliably at 1.5 V supply?
Yes - TSU112IYQ3T is fully specified from 1.5 V to 5.5 V, with 920 nA typical ICC and 150 µV max Vio guaranteed at 1.5 V. Output swing remains rail-to-rail down to 1.5 V, and common-mode input range extends to (VCC−) − 0.1 V, enabling direct interface with single-cell LiFePO₄ batteries.
How does the 4.6 µVpp low-frequency noise impact energy harvesting designs?
This noise level sets the minimum detectable signal for thermoelectric or piezoelectric harvesters: a 10 kΩ source impedance yields ~13 nV/√Hz thermal noise, so the op-amp's 4.6 µVpp (0.1–10 Hz) contributes <0.5% error in integrated 1-second measurements - sufficient for >99% energy harvesting efficiency tracking in ISO 16750-2 compliant systems.
Is TSU112IYQ3T pin-compatible with other ST nanopower op-amps?
No - TSU112IYQ3T uses an 8-pin DFN layout optimized for dual-channel symmetry (OUT1/IN1−/IN1+/VCC−/IN2+/IN2−/OUT2/VCC+), whereas TSU111IY uses 5-pin SC70/SOT23 and TSZ122IYLT uses 8-pin SOIC. PCB redesign is required for substitution; no mechanical or electrical pin compatibility exists across these families.
TSU112IYQ3T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 8-WFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Amplifier Type:
- CMOS
- Number of Circuits:
- 2
- Output Type:
- Rail-to-Rail
- Slew Rate:
- 0.0031V/µs
- Gain Bandwidth Product:
- 9 kHz
- -3db Bandwidth:
- -
- Current - Input Bias:
- 1 pA
- Voltage - Input Offset:
- 150 µV
- Current - Supply:
- 1µA (x2 Channels)
- Current - Output / Channel:
- 45 mA
- Voltage - Supply Span (Min):
- 1.5 V
- Voltage - Supply Span (Max):
- 5.5 V
- Operating Temperature:
- -40°C ~ 125°C
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- 8-DFN (2x2)
TSU112IYQ3T FAQ
1.How can I place an order for TSU112IYQ3T through Aetrix?
Please submit a Request for Quotation (RFQ) for TSU112IYQ3T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TSU112IYQ3T reliable?
The price and inventory of TSU112IYQ3T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TSU112IYQ3T is usually 5 days.
3.What payment methods are accepted for TSU112IYQ3T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TSU112IYQ3T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TSU112IYQ3T?
TSU112IYQ3T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TSU112IYQ3T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TSU112IYQ3T?
For technical support, including TSU112IYQ3T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TSU112IYQ3T requirements.
6.How does Aetrix verify that TSU112IYQ3T is sourced from the original manufacturer or authorized distributors?
All TSU112IYQ3T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TSU112IYQ3T meets industry standards.
7.What is the process for return or replacement of TSU112IYQ3T?
All TSU112IYQ3T units undergo pre-shipment inspection (PSI). If there is an issue with TSU112IYQ3T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TSU112IYQ3T part is unused and in its original packaging.
Return procedure for TSU112IYQ3T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TSU112IYQ3T Tags
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