STMicroelectronics TSU114IPT

Overview

TSU114IPT from STMicroelectronics is a quad-channel nanopower CMOS operational amplifier optimized for ultra-low-power sensor signal conditioning in battery-constrained systems. It delivers 900 nA typical supply current per channel, 150 µV max input offset voltage at 25 °C, rail-to-rail input/output operation from 1.5 V to 5.5 V supply, and 11.5 kHz gain bandwidth product - enabling precision analog front-ends in gas sensors (CO/O₂/H₂S), wearable energy harvesting nodes, and active RFID tags.

For engineers reviewing the TSU114IPT datasheet, TSU114IPT pinout, TSU114IPT application, or TSU114IPT equivalent, key selection criteria include sub-microamp quiescent current, low-frequency noise (3.6 µVpp, 0.1–10 Hz), ESD robustness (4 kV HBM), guaranteed performance over –40 to +85 °C, and compatibility with CR2032 coin-cell lifetime exceeding 25 years.

Technical Context

The TSU114IPT employs complementary PMOS/NMOS input differential pairs to achieve true rail-to-rail input common-mode range (VCC− −0.1 V to VCC+ +0.1 V) without phase reversal. Its MOSFET input stage ensures ≤10 pA max input bias current at 25 °C, critical for high-impedance trans-impedance configurations used with electrochemical gas sensors.

Designed for stability with capacitive loads up to 100 pF, it features 60° phase margin and 7 dB gain margin at 3.3 V supply. The device maintains consistent GBP (10–11.5 kHz), CMRR (76–121 dB), and output drive capability (±30 mA sink/source at 5 V) across its full 1.5–5.5 V operating range and industrial temperature span.

Key Specifications

Pinout & Package

TSU114IPT is housed in a MiniSO8 (SOIC-8) package with exposed pad (not electrically connected). Pin 1 is marked by a dot; pin numbering follows standard SOIC convention (counterclockwise from top-left corner).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nanopower op-amp applications.

Compared with TSU112IPT, TSU114IPT provides two additional independent amplifier channels in the same MiniSO8 package - enabling compact four-sensor arrays or redundant signal paths without increasing PCB area. Against TSZ124IPT, TSU114IPT trades 130 µV higher offset for 50% lower supply current, making it optimal for multi-year battery life targets where moderate DC accuracy suffices.

Availability

TSU114IPT is available at Aetrix Electronics and suitable for gas sensing, wearable energy harvesting, battery current monitoring, and active RFID tag design requiring stable component supply across extended production lifecycles.

Supply support for TSU114IPT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

The TSU11x family was developed specifically for ultra-low-power analog signal conditioning in maintenance-free IoT endpoints - prioritizing nanopower operation, long-term DC stability, and robustness in harsh environmental deployments.

FAQ

What is the maximum capacitive load the TSU114IPT can drive stably?

The TSU114IPT maintains unity-gain stability with capacitive loads up to 100 pF when using recommended PCB layout practices (short traces, local 10 nF decoupling). For loads exceeding 100 pF, a series isolation resistor (R_iso) of 10–100 Ω between output and load is advised to prevent peaking or oscillation, as validated in Figure 30 of the datasheet.

Can the TSU114IPT operate reliably at 1.5 V supply?

Yes - the TSU114IPT is fully specified and characterized down to 1.5 V supply voltage, with guaranteed parameters including 900 nA supply current, 150 µV max offset, and rail-to-rail input/output swing. Performance metrics such as GBP (10 kHz min) and CMRR (71 dB min) remain valid across the entire 1.5–5.5 V range per Table 2 and Tables 3–5.

How does the guarding technique improve TSU114IPT performance in high-impedance circuits?

Guarding surrounds sensitive input traces with a low-impedance conductor held at the same potential (e.g., buffered input voltage), eliminating leakage current through PCB surface contamination or moisture. This technique reduces effective input bias current errors in trans-impedance amplifiers using >1 GΩ feedback resistors - directly improving long-term DC accuracy in gas sensor applications.

Is the exposed pad on the MiniSO8 package electrically connected?

No - the exposed pad on the TSU114IPT MiniSO8 package is not internally connected to any die node. It may be left floating or soldered to a thermal pad on the PCB for improved heat dissipation, but must not be tied to VCC− or any other voltage unless explicitly confirmed in a revised datasheet revision - current DS11846 Rev 6 states it is unconnected.