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STMicroelectronics TSV632IDT
- Part No.:
- TSV632IDT
- Manufacturer:
- STMicroelectronics
- Category:
- Instrumentation, Op Amps, Buffer Amps
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
TSV632IDT.pdf
- Description:
- IC OPAMP GP 2 CIRCUIT 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:7,027
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Product details
Overview
TSV632IDT from STMicroelectronics is a dual rail-to-rail input/output operational amplifier optimized for ultra-low-power, low-voltage operation (1.5 V to 5.5 V), delivering 880 kHz gain-bandwidth product at 60 µA supply current per channel, 800 µV max input offset voltage (A-grade), and 1 pA typical input bias current - ideal for precision sensor signal conditioning in battery-powered medical and portable instrumentation.
For engineers reviewing the TSV632IDT datasheet, TSV632IDT pinout, TSV632IDT application, or TSV632IDT equivalent, key selection criteria include its shutdown-capable dual-channel architecture (though TSV632IDT itself lacks SHDN pin), guaranteed rail-to-rail I/O performance down to 1.5 V, EMI-hardened design (EMIRR up to 92 dB at 1.8 GHz), and automotive-qualified (-40 °C to +125 °C) operation with stable AC response into 100 pF loads.
Technical Context
The TSV632IDT employs complementary PMOS/NMOS input stages enabling true rail-to-rail input common-mode range (VCC– – 0.1 V to VCC+ + 0.1 V) without phase reversal, while its output swings within 35 mV of both rails under 10 kΩ load. Its internal current-source biasing ensures tight ±17% spread in supply current (50–69 µA typ), directly stabilizing GBP (min 730 kHz), slew rate (min 0.25 V/µs), and large-signal gain (min 89 dB).
It features EMI-hardened architecture with measured EMIRR of 92 dB at 1.8 GHz and 85 dB at 900 MHz, and supports stable unity-gain operation with ≥45° phase margin into 100 pF capacitive loads - eliminating need for external compensation in most active filtering and sensor interface configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Supply Voltage Range | 1.5 V to 5.5 V - enables direct use with single-cell Li-ion, LiFePO₄, or alkaline batteries without regulation. |
| Supply Current per Channel | 60 µA typ at 5 V - allows >1-year operation on 200 mAh coin cell in always-on sensor nodes. |
| Gain Bandwidth Product | 880 kHz typ - supports accurate amplification of DC–100 kHz biosignals (ECG, EEG) with minimal phase lag. |
| Input Offset Voltage (max) | 800 µV for A-grade - ensures ≤0.016% error in 5 V full-scale bridge sensor outputs. |
| Input Bias Current | 1 pA typ - prevents significant voltage error across high-impedance pH or photodiode sensors (>1 GΩ source impedance). |
| EMI Rejection Ratio | 92 dB at 1.8 GHz - suppresses cellular band interference in wearable medical devices without shielding. |
| Rail-to-Rail I/O | Input CMR: VCC– – 0.1 V to VCC+ + 0.1 V; Output swing: within 35 mV of rails - maximizes dynamic range in low-voltage ADC front-ends. |
Pinout & Package
TSV632IDT is housed in an SO8 (Small Outline 8-pin) package with exposed pad (ECOPACK® compliant), offering thermal resistance RthJA = 125 °C/W and compatibility with standard reflow profiles. Pin 1 is marked by a beveled corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Inverting Input (Channel A) | High-impedance node accepting differential feedback signals; rail-to-rail capable. |
| 2 | Non-inverting Input (Channel A) | Accepts reference or sensor signal; immune to phase reversal across full supply range. |
| 3 | Output (Channel A) | Drives 10 kΩ load to within 35 mV of rails; stable into 100 pF without external compensation. |
| 4 | VCC– (Ground) | Power return path; must be decoupled with 10 nF capacitor placed <1 mm from pin. |
| 5 | Non-inverting Input (Channel B) | Independent high-Z input for second sensor channel or reference buffer. |
| 6 | Inverting Input (Channel B) | Supports dual-channel differential sensing or independent signal paths. |
| 7 | Output (Channel B) | Matched AC performance to Channel A; enables dual-sensor synchronous acquisition. |
| 8 | VCC+ (Supply) | Accepts 1.5–5.5 V; requires local 10 nF decoupling to maintain PSRR >75 dB. |
Key Features
| Feature | Design Value |
|---|---|
| Rail-to-rail input and output | Enables full utilization of 1.5 V supply headroom in space-constrained wearables and implantables. |
| Ultra-low input bias current (1 pA typ) | Eliminates measurable error in high-Z electrochemical sensor interfaces (e.g., glucose, pH). |
| EMI-hardened architecture | Guarantees stable operation in RF-dense environments (e.g., Bluetooth LE medical hubs) without layout mitigation. |
| Automotive qualification (-40 °C to +125 °C) | Validates reliability for under-hood or industrial edge sensor nodes without derating. |
| Tight parameter distribution (±17% ICC) | Reduces system-level calibration burden across production batches in multi-channel data loggers. |
Applications
| ECG Front-End Amplifier | Portable Gas Sensor Interface |
|---|---|
Use Scenario: Amplifying microvolt-level biopotential signals from dry electrodes in ambulatory ECG patches. IC Role / Device Role / Timing Role: Dual-channel instrumentation amplifier first stage, providing rail-to-rail input to capture full electrode offset range and low-noise gain before ADC. Use Value: 1 pA input bias prevents polarization drift on Ag/AgCl electrodes; 880 kHz GBP preserves QRS complex fidelity without aliasing. | Use Scenario: Conditioning output from metal-oxide semiconductor (MOS) gas sensors requiring precise bias and low-drift amplification. IC Role / Device Role / Timing Role: Transimpedance amplifier and offset-compensated signal conditioner for ppm-level CO detection circuits. Use Value: 800 µV max Vos avoids false alarms in low-concentration thresholds; 1.5 V operation extends battery life in handheld detectors. |
| Wearable Pulse Oximeter Analog Front-End | Industrial Battery Monitoring Unit |
Use Scenario: Simultaneous amplification of red (660 nm) and IR (940 nm) photodiode currents in compact oximeters. IC Role / Device Role / Timing Role: Dual-channel transimpedance amplifier with matched gain and bandwidth for ratiometric SpO₂ calculation. Use Value: Matched channel performance (±17% ICC) ensures consistent gain ratio; EMI hardening rejects smartphone RF interference. | Use Scenario: Precision voltage monitoring of individual Li-ion cells in 4S battery packs for UPS and power tools. IC Role / Device Role / Timing Role: High-input-impedance buffer and level-shifter for cell voltage measurement referenced to pack ground. Use Value: Rail-to-rail input accepts 0–4.2 V cell range directly; 125 °C rating supports operation near hot battery cells. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual low-power op-amp applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TSV632IST | Same core specs but in MiniSO10 package with integrated shutdown (SHDN) pin; 2.2 mV max Vos. | Required when system-level power gating of analog front-end is needed; adds PCB footprint and control logic. | Select TSV632IST only if active shutdown is mandatory; otherwise TSV632IDT offers lower cost and simpler layout. |
| MCP6022-E/SN | Higher supply current (100 µA), wider VCC (2.7–6.0 V), no EMI hardening; 3.5 mV max Vos. | Suitable for non-automotive, non-RF-sensitive applications where 1.5 V operation is not required. | Choose MCP6022-E/SN only for legacy 3.3 V systems lacking EMI constraints; avoid in medical wearables. |
Compared with TSV632IST, TSV632IDT trades shutdown capability for smaller SO8 footprint and tighter offset; versus MCP6022-E/SN, it delivers superior low-voltage operation, EMI immunity, and input bias performance critical for next-gen portable diagnostics.
Availability
TSV632IDT is available at Aetrix Electronics and suitable for battery-powered medical devices, portable environmental sensors, and industrial battery monitoring systems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for TSV632IDT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, analog ICs, MEMS, and power solutions for automotive, industrial, and consumer markets.
The TSV63x series belongs to ST's precision low-power op-amp product line, engineered specifically for energy-constrained, high-reliability applications including medical wearables, IoT sensor nodes, and automotive body electronics.
FAQ
Does TSV632IDT include a shutdown pin?
No. TSV632IDT is the dual-channel variant without shutdown functionality. The shutdown-enabled versions are TSV633 (dual) and TSV635 (quad), designated by '3' or '5' in the third position. TSV632IDT's SO8 pinout omits the SHDN terminal entirely, simplifying control logic for always-on applications.
What is the maximum capacitive load TSV632IDT can drive stably?
TSV632IDT is unity-gain stable driving up to 100 pF capacitive load without external compensation, as verified by ≥45° phase margin in datasheet Figure 5 and Figure 6. For loads exceeding 100 pF, a series resistor (e.g., 10–100 Ω) between output and capacitance restores stability - values are detailed in Figure 22 of the datasheet.
Is TSV632IDT qualified for automotive applications?
Yes. TSV632IDT carries automotive qualification per AEC-Q100 Grade 1 (–40 °C to +125 °C ambient), with full electrical specifications guaranteed across this range. It also meets ST's ECOPACK® environmental standards and is manufactured in IATF 16949-certified facilities.
Can TSV632IDT operate from a 1.5 V supply?
Yes. TSV632IDT is fully specified and characterized down to 1.5 V supply voltage, with guaranteed parameters including 730 kHz min GBP, 0.25 V/µs min slew rate, and rail-to-rail input/output operation - enabling direct interface with primary alkaline or zinc-carbon cells without voltage boosting.
TSV632IDT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Amplifier Type:
- General Purpose
- Number of Circuits:
- 2
- Output Type:
- Rail-to-Rail
- Slew Rate:
- 0.34V/µs
- Gain Bandwidth Product:
- 880 kHz
- -3db Bandwidth:
- -
- Current - Input Bias:
- 1 pA
- Voltage - Input Offset:
- 3 mV
- Current - Supply:
- 50µA (x2 Channels)
- Current - Output / Channel:
- 74 mA
- Voltage - Supply Span (Min):
- 1.5 V
- Voltage - Supply Span (Max):
- 5.5 V
- Operating Temperature:
- -40°C ~ 125°C
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
TSV632IDT FAQ
1.How can I place an order for TSV632IDT through Aetrix?
Please submit a Request for Quotation (RFQ) for TSV632IDT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TSV632IDT reliable?
The price and inventory of TSV632IDT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TSV632IDT is usually 5 days.
3.What payment methods are accepted for TSV632IDT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TSV632IDT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TSV632IDT?
TSV632IDT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TSV632IDT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TSV632IDT?
For technical support, including TSV632IDT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TSV632IDT requirements.
6.How does Aetrix verify that TSV632IDT is sourced from the original manufacturer or authorized distributors?
All TSV632IDT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TSV632IDT meets industry standards.
7.What is the process for return or replacement of TSV632IDT?
All TSV632IDT units undergo pre-shipment inspection (PSI). If there is an issue with TSV632IDT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TSV632IDT part is unused and in its original packaging.
Return procedure for TSV632IDT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TSV632IDT Tags
-
LM358DT
STMicroelectronics
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LM358DR
Texas Instruments
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LM2904DR
Texas Instruments
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LM358ADR
Texas Instruments
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LM2904DGKR
Texas Instruments
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LM324DR
Texas Instruments
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MCP6006T-E/OT
Microchip Technology
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MCP6006UT-E/OT
Microchip Technology
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LM324PWR
Texas Instruments
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LM2902PWR
Texas Instruments
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LM2902DR
Texas Instruments
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LM358P
Texas Instruments
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