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STMicroelectronics TSV632IYDT

Part No.:
TSV632IYDT
Manufacturer:
STMicroelectronics
Category:
Instrumentation, Op Amps, Buffer Amps
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixTSV632IYDT.pdf
Description:
IC OPAMP GP 2 CIRCUIT 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,776

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Product details

Overview

TSV632IYDT from STMicroelectronics is a dual rail-to-rail input/output operational amplifier optimized for ultra-low-power, low-voltage operation (1.5 V to 5.5 V), delivering 880 kHz gain-bandwidth product at only 60 µA per channel (typ. at 5 V), 800 µV max input offset voltage (A version), and 1 pA typical input bias current - enabling precision signal conditioning in space-constrained battery-powered sensor interfaces.

For engineers reviewing the TSV632IYDT datasheet, TSV632IYDT pinout, TSV632IYDT application, or TSV632IYDT equivalent, key selection criteria include its shutdown-capable dual-channel architecture (TSV632A variant), EMI-hardened performance (EMIRR up to 92 dB at 1.8 GHz), rail-to-rail output swing within 35 mV of rails (RL = 10 kΩ), and guaranteed operation across –40 °C to +125 °C automotive temperature range.

Technical Context

The TSV632IYDT employs complementary PMOS/NMOS input stages to achieve true rail-to-rail input common-mode range (VCC− −0.1 V to VCC+ +0.1 V) without phase reversal, with transition region centered near VCC+ −0.7 V. Its micropower biasing ensures tight ICC dispersion (±17 %), directly stabilizing GBP (min 730 kHz), slew rate (min 0.25 V/µs), and large-signal gain (min 89 dB).

It features an integrated shutdown control (SHDN pin) that reduces total supply current to 5 nA typ. at 5 V, places outputs in high-impedance state, and achieves 200 ns turn-on time. The device is unity-gain stable driving up to 100 pF capacitive loads and supports robust decoupling via on-board 10 nF capacitors near supply pins.

Key Specifications

Parameter Value and Actual Design Meaning
Supply Voltage Range 1.5 V to 5.5 V - enables direct integration into single-cell Li-ion, coin-cell, and 3.3 V/5 V systems without level-shifting.
Quiescent Current (per channel) 60 µA typ. at 5 V - supports >1-year battery life in always-on sensor nodes drawing <130 µA total.
Gain Bandwidth Product 880 kHz typ. - sufficient for anti-aliasing filters, ECG front-ends, and 10-bit ADC drivers up to ~100 kHz signals.
Input Offset Voltage (max) 800 µV (TSV632A) - ensures ≤0.016% full-scale error in 5 V-span 12-bit systems without trimming.
Input Bias Current 1 pA typ. - preserves signal integrity in high-impedance pH, photodiode, and piezoelectric sensor interfaces.
EMI Rejection Ratio 92 dB at 1.8 GHz - suppresses cellular band interference in portable medical and IoT edge devices.
Rail-to-Rail Output Swing Within 35 mV of rails (RL = 10 kΩ) - maximizes dynamic range in low-voltage data acquisition with 1.8 V or 3.3 V ADCs.

Pinout & Package

TSV632IYDT is supplied in the SOT23-8 package - an 8-pin surface-mount outline measuring 2.9 mm × 2.8 mm × 1.3 mm (max height), with exposed pad option for thermal enhancement and mechanical anchoring.

Pin/Terminal Circuit Role Design Meaning
1 Inverting Input (Channel A) High-impedance node accepting differential signal reference; rail-to-rail capable down to VCC− −0.1 V.
2 Non-inverting Input (Channel A) High-Z sensing node; matched to Pin 1 for CMRR >55 dB across full temperature range.
3 Output (Channel A) Capable of sourcing/sinking ≥40 mA (at 5 V); swings within 35 mV of VCC+/VCC− under 10 kΩ load.
4 VCC− (Ground) Reference return path; must be low-impedance; decoupled with 10 nF capacitor placed <1 mm from pin.
5 VCC+ Positive supply rail; accepts 1.5–5.5 V; internal regulation ensures stable biasing across voltage range.
6 Output (Channel B) Independent output stage; identical AC/DC specs to Channel A; no crosstalk degradation up to 100 kHz.
7 Non-inverting Input (Channel B) Electrically isolated from Channel A inputs; supports dual independent signal paths on single die.
8 Inverting Input (Channel B) Matched pair with Pin 7; enables differential configurations (e.g., instrumentation amp front-end) without external matching.

Key Features

Feature Design Value
Rail-to-rail input and output Extends usable input range to VCC− −0.1 V / VCC+ +0.1 V and output swing to within 35 mV of both rails - eliminates need for level-shifting in low-voltage designs.
Ultra-low input bias current (1 pA typ.) Minimizes voltage error in high-Z sensor circuits (e.g., 10 MΩ source impedance adds only 10 µV offset).
EMI-hardened architecture Rejects RF interference up to 2.4 GHz (83 dB) without external filtering - critical for Bluetooth/Wi-Fi coexistence in wearables.
Automotive-grade qualification Qualified per AEC-Q100 Grade 1 (−40 °C to +125 °C) - suitable for engine control, cabin sensors, and ADAS auxiliary signal chains.
Shutdown mode (5 nA typ. ICC) Reduces total system standby power by >99.9% versus active mode - enables wake-on-event architectures in battery-backed modules.

Applications

Portable ECG Monitor Smart Smoke Detector Sensor Interface

Use Scenario: Amplifying microvolt-level biopotential signals from dry electrodes in a handheld cardiac rhythm analyzer.

IC Role / Device Role / Timing Role: Dual-channel op-amp configured as DC-coupled instrumentation amplifier front-end with adjustable gain and high-pass filtering.

Use Value: 1 pA input bias current prevents electrode polarization drift; rail-to-rail output drives 12-bit SAR ADC directly from 3.3 V supply without gain-stage headroom loss.

Use Scenario: Conditioning analog output from NDIR CO₂ and photoelectric smoke detection elements in battery-operated residential alarms.

IC Role / Device Role / Timing Role: Low-power transimpedance amplifier (TIA) and buffer for photodiode current, plus reference voltage follower for comparator threshold stability.

Use Value: 60 µA/channel quiescent current extends 10-year lithium primary battery life; EMI hardening prevents false alarms from nearby RF sources.

Industrial Wireless Temperature Node Wearable Glucose Monitoring Front-End

Use Scenario: Signal conditioning for Pt100 RTD bridge outputs in a LoRaWAN-enabled field sensor node powered by AA batteries.

IC Role / Device Role / Timing Role: Precision difference amplifier with programmable gain, followed by rail-to-rail output buffer feeding 16-bit ΣΔ ADC.

Use Value: 800 µV max Vio ensures <0.1 °C measurement uncertainty over −25 °C to +85 °C; shutdown mode cuts idle current to 5 nA during sleep cycles.

Use Scenario: Amplifying nanoamp-level amperometric current from enzyme-based glucose oxidase electrodes in a disposable patch sensor.

IC Role / Device Role / Timing Role: Ultra-low-noise, low-drift transimpedance amplifier with guarded input traces and 100 pF capacitive load stability.

Use Value: 60 nV/√Hz input noise at 1 kHz preserves signal fidelity; rail-to-rail input accommodates wide common-mode shift during electrode polarization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-power rail-to-rail op-amp applications.

Alternative Part Technical Difference Application Difference Selection Advice
TSV632IST SOT23-8 package with same electrical specs; differs only in tape-and-reel packaging and marking (no functional change). Identical use cases; selected when board layout requires same footprint but different logistics (e.g., smaller reels for prototyping). Drop-in replacement for TSV632IYDT where packaging format is the sole constraint.
MCP6002T-I/SN Higher quiescent current (100 µA), lower GBP (1 MHz), no shutdown, wider offset (1.5 mV max), non-automotive qualified. Suitable for cost-sensitive consumer portables where extended temperature range and EMI immunity are not required. Choose only if automotive qualification, sub-100 µA power budget, or 1.8 GHz EMI rejection are unnecessary.

Compared with TSV632IYDT, TSV632IST offers identical performance in alternate packaging, while MCP6002T-I/SN trades automotive reliability and micropower efficiency for lower unit cost in commercial-grade applications - making TSV632IYDT the sole choice for safety-critical or long-life battery systems demanding AEC-Q100 compliance and <60 µA/channel operation.

Availability

TSV632IYDT is available at Aetrix Electronics and suitable for portable medical devices, industrial wireless sensor nodes, and automotive cabin environmental monitoring requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for TSV632IYDT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The TSV63x series belongs to ST's precision micropower op-amp product line, engineered specifically for ultra-low-voltage, low-power signal conditioning in battery-constrained and automotive-qualified applications - emphasizing rail-to-rail operation, EMI resilience, and extended temperature stability.

FAQ

Is TSV632IYDT pin-compatible with other dual op-amps in SOT23-8?

No - TSV632IYDT uses a non-standard pinout: Pins 1–3 are Channel A (−IN, +IN, OUT), Pin 4 is VCC−, Pin 5 is VCC+, Pins 6–8 are Channel B (OUT, +IN, −IN). It is not compatible with generic dual op-amps like LMV358 or MCP6002, which follow industry-standard pin mapping. Layout redesign is required for substitution.

Does TSV632IYDT support true shutdown functionality?

Yes - the TSV632IYDT (A-version) includes a dedicated SHDN pin (Pin 3 on TSV633/TSV635; not present on TSV632IYDT). However, TSV632IYDT itself does not feature shutdown. Only TSV633IYDT and TSV635IYDT variants include this function. Confusion arises because the datasheet covers the full family; TSV632IYDT is the dual non-shutdown variant.

What is the maximum capacitive load TSV632IYDT can drive without oscillation?

TSV632IYDT is unity-gain stable driving up to 100 pF capacitive load in voltage-follower configuration. Driving larger loads (e.g., >150 pF) requires adding a series resistor (≥100 Ω) between output and load to isolate capacitance, as specified in Section 4.6 of the datasheet. Stability must be verified experimentally for each target load.

Can TSV632IYDT operate reliably at 1.5 V supply?

Yes - TSV632IYDT is fully characterized and guaranteed from 1.5 V to 5.5 V. At 1.5 V, it delivers 700 kHz GBP (min), 0.2 V/µs slew rate, and maintains rail-to-rail input/output operation. All key parameters - including input offset, CMRR, and PSRR - remain within spec across this range, validated from −40 °C to +125 °C.

TSV632IYDT Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Amplifier Type:
General Purpose
Number of Circuits:
2
Output Type:
Rail-to-Rail
Slew Rate:
0.34V/µs
Gain Bandwidth Product:
880 kHz
-3db Bandwidth:
-
Current - Input Bias:
1 pA
Voltage - Input Offset:
3 mV
Current - Supply:
50µA (x2 Channels)
Current - Output / Channel:
74 mA
Voltage - Supply Span (Min):
1.5 V
Voltage - Supply Span (Max):
5.5 V
Operating Temperature:
-40°C ~ 125°C
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

TSV632IYDT FAQ

1.How can I place an order for TSV632IYDT through Aetrix?

Please submit a Request for Quotation (RFQ) for TSV632IYDT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TSV632IYDT reliable?

The price and inventory of TSV632IYDT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TSV632IYDT is usually 5 days.

3.What payment methods are accepted for TSV632IYDT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TSV632IYDT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TSV632IYDT?

TSV632IYDT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TSV632IYDT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TSV632IYDT?

For technical support, including TSV632IYDT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TSV632IYDT requirements.

6.How does Aetrix verify that TSV632IYDT is sourced from the original manufacturer or authorized distributors?

All TSV632IYDT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TSV632IYDT meets industry standards.

7.What is the process for return or replacement of TSV632IYDT?

All TSV632IYDT units undergo pre-shipment inspection (PSI). If there is an issue with TSV632IYDT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TSV632IYDT part is unused and in its original packaging.

Return procedure for TSV632IYDT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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