STMicroelectronics TSV712IQ2T

Overview

TSV712IQ2T from STMicroelectronics is a dual-channel, rail-to-rail input/output CMOS operational amplifier optimized for ultra-low-power, high-accuracy signal conditioning in battery-powered systems. It delivers 200 µV max input offset voltage, 14 µA supply current per channel at 5 V, and 150 kHz gain bandwidth product, operating from 1.5 V to 5.5 V across –40 °C to +125 °C - enabling precision sensor front-ends in portable medical devices.

For engineers reviewing the TSV712IQ2T datasheet, TSV712IQ2T pinout, TSV712IQ2T application, or TSV712IQ2T equivalent, key selection criteria include micropower operation under 15 µA, guaranteed rail-to-rail I/O swing with <80 mV output saturation, EMI-hardened performance up to 2.4 GHz, and extended temperature stability without calibration.

Technical Context

The TSV712IQ2T employs ST's proprietary 5 V CMOS process with internal trimming architecture that initiates at power-up to achieve 200 µV max V_io. Its rail-to-rail input stage extends common-mode range to V_CC–0.1 V to V_CC+0.1 V, while the output stage drives within 40 mV of V_CC and 75 mV of ground under 10 kΩ load.

It features 1 pA typical input bias current, 94 dB min CMRR at 5 V, and 38–63 dB EMI rejection ratio (EMIRR) across 400–2400 MHz - confirming hardened RF immunity. The 10 µV/°C max input offset drift over –40 °C to +125 °C enables stable DC-coupled gain without thermal recalibration.

Key Specifications

Pinout & Package

TSV712IQ2T is housed in a 8-pin DFN package (2 mm × 2 mm, 0.4 mm pitch) with exposed thermal pad. Pin 1 is marked by a dot; the exposed pad must be soldered to PCB ground for optimal thermal and EMI performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar micropower, high-accuracy op-amp applications.

Compared with TSV712IQ2T, TSV732IQ2T offers 6× higher bandwidth at 4× higher current, while MCP6V81-E/SN achieves 60× lower offset via zero-drift but doubles power and cost - making TSV712IQ2T optimal for battery-limited, cost-sensitive, moderate-bandwidth precision sensing.

Availability

TSV712IQ2T is available at Aetrix Electronics and suitable for portable medical devices, industrial sensor nodes, smart home safety detectors, and battery-powered instrumentation requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for TSV712IQ2T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The TSV71x series was developed specifically for ultra-low-power, high-accuracy signal conditioning in energy-constrained, thermally demanding applications - prioritizing micropower operation, rail-to-rail functionality, and EMI resilience without sacrificing DC precision.

FAQ

What is the maximum capacitive load the TSV712IQ2T can drive stably?

The TSV712IQ2T maintains phase margin ≥45° with up to 100 pF capacitive load when configured with 10 kΩ feedback and load resistors, as verified in Figure 13 of the datasheet. Driving larger capacitive loads requires isolation resistance (≥100 Ω) in series with the output to prevent peaking or oscillation.

Does the TSV712IQ2T require external compensation for unity-gain stability?

No. The TSV712IQ2T is internally compensated for unity-gain stability across its full supply range (1.5 V to 5.5 V) and temperature range (–40 °C to +125 °C), with guaranteed phase margin ≥45° and gain margin ≥19 dB per Table 3–5 AC specifications.

Can the exposed thermal pad on the DFN8 package be left floating?

No. The exposed pad must be soldered to a PCB copper pour connected to GND. Leaving it floating degrades thermal resistance (R_thJA increases from 120 °C/W to >200 °C/W), raises junction temperature, and reduces EMI immunity - violating recommended layout in Section 4.7.

How does the power-up initialization affect system timing in wake-on-event designs?

The initialization sequence completes within 5 ms at 25 °C and 50 ms at 125 °C (Table 6), during which V_io and I_CC are not guaranteed. For wake-on-event systems, this delay must be included in the total wake latency budget - no external reset or delay circuitry is needed beyond standard power-rail ramp time.