STMicroelectronics TSV734IPT

Overview

TSV734IPT from STMicroelectronics is a quad rail-to-rail input/output CMOS operational amplifier optimized for ultra-low-power, high-accuracy signal conditioning in battery-powered systems. It delivers 200 µV max input offset voltage, 60 µA supply current per channel at 5 V, 900 kHz gain bandwidth, and operates from 1.5 V to 5.5 V across –40 °C to +125 °C - enabling precision sensor front-ends in portable medical devices.

For engineers reviewing the TSV734IPT datasheet, TSV734IPT pinout, TSV734IPT application, or TSV734IPT equivalent, key selection criteria include its micropower consumption with sub-200 µV offset, EMI-hardened architecture (41–66 dB EMIRR), rail-to-rail I/O swing, and guaranteed performance over extended temperature range - critical for low-voltage analog signal chains requiring long-term stability without calibration.

Technical Context

The TSV734IPT implements a CMOS input stage with 1 pA typical input bias current and rail-to-rail common-mode input range (VCC− − 0.1 V to VCC+ + 0.1 V), enabling direct interfacing with resistive sensors and low-voltage ADC references. Its internal compensation delivers 48° phase margin and 15 dB gain margin at 5 V, supporting stable unity-gain operation with capacitive loads up to 100 pF.

It features EMI hardening verified at 400–2400 MHz (EMIRR = 41–66 dB), 4 kV HBM ESD rating, and <0.35 V/µs slew rate - balancing speed, noise immunity, and power efficiency for DC-coupled instrumentation paths where settling time and RF rejection are co-constrained.

Key Specifications

Pinout & Package

The TSV734IPT is housed in a 16-pin QFN package (3 mm × 3 mm, 0.5 mm pitch) with exposed thermal pad. Pin 1 is marked by a dot; the exposed pad must be connected to V_CC– (GND) for optimal thermal and EMI performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar quad micropower op-amp applications.

Compared with TLV9054IDR and MAX44260ASA+, the TSV734IPT uniquely balances sub-200 µV offset, 60 µA power, QFN16 compactness, and 2.4 GHz EMI rejection - making it optimal for space- and energy-constrained embedded sensors where RF immunity and long-term zero-drift are co-critical.

Availability

TSV734IPT is available at Aetrix Electronics and suitable for portable medical devices, industrial sensor transmitters, automotive cabin monitoring systems, and battery-powered IoT edge nodes requiring stable component supply across extended temperature and EMI environments.

Supply support for TSV734IPT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in analog, power, and microcontroller solutions for industrial, automotive, and consumer markets.

The TSV73x series was developed to address demand for high-accuracy, micropower op-amps in battery-constrained applications - delivering rail-to-rail performance, EMI resilience, and extended temperature operation without sacrificing DC precision.

FAQ

What is the maximum capacitive load the TSV734IPT can drive while maintaining stability?

The TSV734IPT is unity-gain stable with capacitive loads up to 100 pF when configured with RL ≥ 10 kΩ, as confirmed by phase margin measurements (48° at 5 V). For loads >100 pF, a series resistor (≥100 Ω) between output and capacitor is recommended to isolate reactive feedback and prevent peaking or oscillation.

Can the exposed thermal pad on the QFN16 package be left floating?

No - the exposed pad must be soldered to a PCB copper pour connected to V_CC– (GND) to achieve the specified 45 °C/W thermal resistance and full EMI rejection performance. Leaving it floating degrades both thermal dissipation and RF immunity, particularly above 1 GHz.

How does the TSV734IPT's input offset voltage drift compare to standard precision op-amps?

With a guaranteed 4.5 µV/°C max drift over –40 °C to +125 °C, the TSV734IPT matches mid-tier precision op-amps (e.g., OP177) while consuming 1/10 the power. Its 650 µV max offset at 125 °C - versus >1 mV for many micropower alternatives - makes it suitable for uncalibrated high-temp industrial sensing.

Is the TSV734IPT qualified for automotive applications per AEC-Q200?

The TSV734IPT is not AEC-Q200 qualified; however, its –40 °C to +125 °C operating range, 4 kV HBM ESD rating, and EMI-hardened design support use in non-safety-critical automotive cabin modules (e.g., climate sensors, occupancy detection). For ASIL-B/C systems, ST's TSZ12x automotive-grade variants are recommended.