STMicroelectronics TSZ182H1YDT

Overview

TSZ182H1YDT from STMicroelectronics is a dual, AEC-Q100 qualified zero-drift operational amplifier optimized for high-accuracy automotive sensor signal conditioning. It delivers 70 µV max offset voltage at 25 °C, 100 µV over −40 to +175 °C, rail-to-rail I/O, 3 MHz gain bandwidth, and 1 mA supply current at 5 V - enabling precision current measurement and high-bandwidth analog front-ends in extreme-temperature engine control units.

For engineers reviewing the TSZ182H1YDT datasheet, TSZ182H1YDT pinout, TSZ182H1YDT application, or TSZ182H1YDT equivalent, this page provides verified electrical specifications, SO8 package details, automotive-grade thermal performance data, and real-world use cases in high-accuracy sensor interfaces where offset stability across temperature is critical.

Technical Context

The TSZ182H1YDT employs auto-zeroing architecture to achieve near-zero input offset drift (0.26 µV/°C) and maintains 103–126 dB CMRR across −40 to +175 °C. Its 3 MHz GBP and 4.7 V/µs slew rate support fast settling (600 ns to 0.1%) while sustaining rail-to-rail output swing under 10 kΩ load.

Designed for harsh automotive environments, it operates from 2.2–5.5 V, withstands junction temperatures up to 180 °C, and features 52–85 dB EMI rejection (400–2400 MHz), with guaranteed 4 kV HBM ESD robustness and 1.5 kV CDM rating per AEC-Q100.

Key Specifications

Pinout & Package

TSZ182H1YDT is supplied in an industry-standard SO8 (Small Outline Integrated Circuit, 150 mil width) package with exposed pad for thermal enhancement. Pin numbering follows JEDEC MS-012AC standard, with pins 1–4 on left side and 5–8 on right side (top view).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-accuracy automotive op-amp applications.

Compared with MAX44267ASA+T and OPA2333AIDR, TSZ182H1YDT uniquely combines Grade 0 AEC-Q100 qualification, 3 MHz bandwidth, and sub-0.3 µV/°C drift - making it the only option validated for real-time, high-accuracy analog acquisition in engine bay and exhaust environments.

Availability

TSZ182H1YDT is available at Aetrix Electronics and suitable for engine control units, transmission control modules, and exhaust aftertreatment systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for TSZ182H1YDT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with R&D and manufacturing facilities across Europe, Asia, and the Americas.

The TSZ18xH1 series belongs to ST's high-precision automotive op-amp product line, engineered specifically for sensor signal conditioning in extreme-temperature vehicle subsystems where offset stability and EMI resilience are non-negotiable.

FAQ

What is the maximum junction temperature and thermal resistance for TSZ182H1YDT in SO8 package?

The absolute maximum junction temperature is 180 °C. The typical thermal resistance junction-to-ambient (R_th-JA) for the SO8 package is 125 °C/W under standard PCB conditions (2-layer board, 1 in² copper). This value assumes proper thermal via placement beneath the exposed pad and adequate copper pour for heat dissipation.

Does TSZ182H1YDT require external capacitors for stability with capacitive loads?

Yes - the datasheet specifies that for loads >100 pF, a small series resistor (typically 10–50 Ω) should be placed between the output and the capacitive load to maintain phase margin ≥56°. No external compensation capacitor is needed for unity-gain stable operation with resistive loads up to 10 kΩ.

How does the EMI rejection ratio (EMIRR) perform at 900 MHz and what test configuration was used?

EMIRR is 52 dB at 900 MHz, measured with 100 mV_p RF injection directly on the IN− pin of the MiniSO8 package. The test uses a calibrated RF probe and monitors output voltage deviation; results confirm robust immunity against GSM band interference without additional shielding or filtering.

Can TSZ182H1YDT operate with a single 2.2 V supply and still achieve rail-to-rail output swing?

Yes - at V_CC+ = 2.2 V and V_CC− = 0 V, the device delivers rail-to-rail output swing with VOH ≤ 70 mV below V_CC+ and VOL ≤ 70 mV above V_CC− across −40 to +175 °C, enabling compatibility with ultra-low-voltage microcontrollers and energy-harvesting systems.