Infineon Technologies TT122N22KOFHPSA2

Overview

TT122N22KOFHPSA2 from Semikron is a phase-control thyristor module with dual anti-parallel SCR configuration, rated for 2200 V repetitive peak off-state voltage (VDRM/VRRM), 122 A average on-state current (ITAVM) at TC = 85 °C, and 220 A RMS on-state current (ITRMSM). It delivers 1.95 V maximum on-state voltage at 400 A and 125 °C junction temperature, enabling high-efficiency AC power control in industrial rectifiers and motor drives.

For engineers reviewing the TT122N22KOFHPSA2 datasheet, TT122N22KOFHPSA2 pinout, TT122N22KOFHPSA2 application, or TT122N22KOFHPSA2 equivalent, key selection criteria include its 0.096 °C/W junction-to-case thermal resistance (DC, per arm), 100 A/µs critical di/dt, 500–1000 V/µs critical dv/dt, and pressure-contact Si pellet construction with AlN isolation.

Technical Context

This dual-thyristor module implements a B6 six-pulse bridge-compatible topology with symmetrical anti-parallel switching arms. Each arm supports gate-trigger currents up to 200 mA and latching currents up to 1200 mA, with turn-off time (tq) of 300 µs under commutated conditions (vRM = 100 V, dvD/dt = 20 V/µs).

Thermal design relies on low RthJC (0.096 °C/W per arm, DC) and RthCH (0.03 °C/W per module), validated for natural cooling (KM17 heatsink, 3 modules) and forced-air cooling (Papst 4650N). Its 2.5 kV RMS insulation test voltage ensures safety in grounded industrial mains interfaces.

Key Specifications

Pinout & Package

TT122N22KOFHPSA2 uses a press-pack module package with isolated copper baseplate and AlN ceramic internal insulation. Mechanical mounting uses M1 screws (6 Nm ±15%) and electrical terminals use M2 screws (6 Nm ±10%). Weight: 310 g. Creepage distance: 15 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with SKKT 105/16 E and TT162N18KOFHPSA2, TT122N22KOFHPSA2 uniquely balances 2200 V blocking with 122 A thermal capability in a single press-pack module-enabling compact, high-isolation B6 rectifiers without discrete assembly or derating.

Availability

TT122N22KOFHPSA2 is available at Aetrix Electronics and suitable for industrial DC motor drives, medium-voltage rectifier systems, AC power controllers, and regenerative braking interfaces requiring stable component supply and long lifecycle support.

Supply support for TT122N22KOFHPSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semikron is a German power semiconductor manufacturer specializing in high-reliability modules for industrial, energy, and traction applications since 1951.

TT122N22KOFHPSA2 belongs to Semikron's TT-series phase-control thyristor modules, engineered for ruggedized AC/DC conversion in harsh environments including steel mills, mining equipment, and marine propulsion systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The maximum allowable case temperature (TC) is 85 °C for full 122 A ITAVM rating. At TC = 76 °C, the rating increases to 140 A. Operation above 85 °C requires derating per the TC = f(ITAVM) curves in the datasheet, with absolute junction limit at 125 °C.

Can TT122N22KOFHPSA2 be used in a two-pulse (B2) bridge configuration?

Yes-TT122N22KOFHPSA2 supports B2 operation using only one anti-parallel arm (A1/K1 or A2/K2) per AC phase leg. The module's dual-arm layout allows flexible B2 or B6 implementation without external paralleling, with maximum ID of 300 A in B2 per the datasheet's ID vs. RthCA plot.

What gate drive requirements ensure reliable turn-on?

Reliable turn-on requires ≥1 A peak gate current (iGM), ≥1 A/µs diG/dt, and ≥20 µs pulse width (tg) at 25 °C. Gate trigger voltage must exceed 2 V (VGT max), and non-trigger voltage must stay below 0.25 V (VGD max) to prevent false firing under dv/dt stress.

How does the AlN isolation impact thermal and electrical performance?

AlN ceramic provides 2.5 kV RMS insulation (1 min, 50 Hz) and contributes to low RthJC (0.096 °C/W). Its high thermal conductivity (≈180 W/m·K) reduces interfacial thermal resistance versus alumina, directly improving power cycling capability and enabling higher current density in the same footprint.