Infineon Technologies TT425N18KOFHPSA2

Overview

TT425N18KOFHPSA2 from Infineon Technologies is a phase-control thyristor module with dual 425 A arms in pressure-contact construction, rated for 1800 V repetitive peak off-state voltage (VDRM/VRRM), 471 A average on-state current at TC = 85 °C, and 14.5 kA non-repetitive surge current (ITSM). It features electrically insulated baseplate, 0.35 mΩ slope resistance (rT), and 0.065 K/W junction-to-case thermal resistance - deployed in industrial soft starters and UPS rectifiers.

For engineers reviewing the TT425N18KOFHPSA2 datasheet, TT425N18KOFHPSA2 pinout, TT425N18KOFHPSA2 application, or TT425N18KOFHPSA2 equivalent, key selection criteria include validated VDRM/VRRM grading (1800 V), ITAVM derating across conduction angles, gate trigger thresholds (IGT ≤ 250 mA, VGT ≤ 1.5 V), and transient thermal impedance ZthJC modeling for crowbar and static switch duty cycles.

Technical Context

This dual-arm thyristor module implements phase-angle control in AC line-commutated applications, supporting 50/60 Hz operation with critical di/dt capability of 120 A/µs and dv/dt immunity up to 1000 V/µs. Its pressure-contact die assembly ensures stable thermal performance under high RMS current stress and enables reliable forced-air or liquid-cooled heatsink mounting via M12 terminal torque.

The device operates with gate-controlled turn-on only; it lacks self-commutation and requires external commutation circuitry or natural zero-crossing for turn-off. Its 250 µs typical circuit commutated turn-off time (tq) and 100 mA max off-state leakage at VDRM define safe blocking margins in high-voltage rectifier bridges and static bypass switches.

Key Specifications

Pinout & Package

TT425N18KOFHPSA2 uses an industrial-standard press-pack module package with electrically insulated AlN ceramic baseplate and 60 mm × 60 mm footprint. Terminals are arranged as two independent arms (A1/K1 and A2/K2), each with anode (A), cathode (K), and gate (G) connections conforming to DIN 46244 A standard (2.8 × 0.8 mm flat blade).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phase-control thyristor module applications.

Compared with TT425N16KOFHPSA2, this part adds 200 V blocking margin for 1000 V AC grid compatibility; compared with TT500N18KOFHPSA2, it reduces conduction loss by 15% at 400 A load while maintaining identical gate drive and heatsink interface.

Availability

TT425N18KOFHPSA2 is available at Aetrix Electronics and suitable for industrial soft starters, UPS rectifiers, crowbar protection circuits, and static bypass switches requiring stable component supply and long-term lifecycle support.

Supply support for TT425N18KOFHPSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This part belongs to Infineon's Thyristor Module product line, engineered for high-reliability, medium-power AC power control in harsh environments where thermal stability and surge robustness are critical.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The maximum junction temperature (Tvj max) is 125 °C. This value sets the upper limit for thermal design: with RthJC = 0.065 K/W and RthCH ≤ 0.02 K/W, the case temperature must stay ≤85 °C to maintain Tj ≤ 125 °C at ITAVM. Derating curves in the datasheet show ITAVM drops to 300 A at TC = 100 °C, confirming strict thermal management requirements.

Can TT425N18KOFHPSA2 be used in parallel configurations?

No - this module is not designed for parallel operation. Its pressure-contact construction and lack of integrated current-sharing features (e.g., emitter ballasting or matched dynamic parameters) make parallel use unreliable. For higher current, select a higher-rated single module like TT500N18KOFHPSA2 or use multi-module systems with individual gate drive and current monitoring per arm.

What gate drive requirements must be met for reliable triggering?

Gate drive must deliver ≥1 A/µs diG/dt and ≥1 A peak current for ≥20 µs to ensure latching (IL ≤ 1500 mA). Trigger voltage must exceed VGT ≤ 1.5 V at 12 V anode-cathode bias, and gate non-trigger voltage (VGD ≤ 0.2 V) must be maintained during blocking to prevent false turn-on. Recommended gate pulse energy is ≥100 mJ per firing event.

How is isolation verified and what safety standards does it meet?

Isolation is verified per IEC 61140 Class 1 basic insulation using 3.6 kV RMS for 1 second at 50 Hz. The AlN ceramic baseplate provides creepage distance ≥19 mm and meets EN 60747-6 Annex D mechanical and dielectric requirements. No additional isolation pads are needed when mounted on grounded heatsinks, simplifying thermal interface design.